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    600S100JW250 Price and Stock

    Kyocera AVX Components 600S100JW250XT

    CAP CER 10PF 250V NP0 0603
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    DigiKey 600S100JW250XT Digi-Reel 3,644 1
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    600S100JW250XT Cut Tape 3,644 1
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    600S100JW250XT Reel 3,500 500
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    Avnet Americas 600S100JW250XT Reel 12 Weeks 2,000
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    Mouser Electronics 600S100JW250XT 2,670
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    TTI 600S100JW250XT Reel 500
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    Richardson RFPD 600S100JW250XT 1,500
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    Kyocera AVX Components 600S100JW250T

    Silicon RF Capacitors / Thin Film 250V 10pF Tol 5%
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    Mouser Electronics 600S100JW250T
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    Richardson RFPD 600S100JW250T 1,500
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    Kyocera AVX Components 600S100JW250XT4K

    Silicon RF Capacitors / Thin Film MLC 600
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    Mouser Electronics 600S100JW250XT4K
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    Kyocera AVX Components 600S100JW250T4K

    Silicon RF Capacitors / Thin Film MLC 600
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    Mouser Electronics 600S100JW250T4K
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    AMERICAN ATC600S100JW250XT

    CAPACITOR, CERAMIC, 250 V, C0G, 0.00001 uF, SURFACE MOUNT, 0603 (Also Known As: 600S100JW250XT)
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    Quest Components ATC600S100JW250XT 2,720
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    600S100JW250 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    600S100JW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 5% NP0 0603 Original PDF

    600S100JW250 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SOF-26

    Abstract: SZP-3026Z
    Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		SZP-3026Z SOF-26 SZP-3026Z EDS-104666 SZP-3026Z* SZP-3026Z-EVB1 SOF-26 PDF

    Untitled

    Abstract: No abstract text available
    Text: SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier SZP-3026Z Preliminary 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor


    Original     		SZP-3026Z SOF-26 SZP-3026Z EDS-104666 SZP-3026Z* SZP-3026Z-EVB1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		SZM-2066Z SZM-2066Z 11b/g LL1608FH4N7J DS110620 LL1608FH10J SZM2066ZSQ SZM2066ZSR PDF

    Untitled

    Abstract: No abstract text available
    Text: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026  P1dB =33.6dBm at 5V  802.11g 54Mb/s Class AB Performance RF IN  POUT =26dBm at 2.5% EVM, VCC 5V, 570mA  POUT =27dBm at 2.5% EVM,


    Original     		RFPA3026 54Mb/s 27dBm 513mA 26dBm 570mA DS120110 PDF

    dk39

    Abstract: SZM-2166 szm2166 SZM2166ZSR 600S100JW250 12NXJBB 600S100 42 dbm 2.4GHz amplifier schematic
    Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT


    Original     		SZM-2166Z SZM-2166Z bands21 DS110620 SZM2166ZSQ SZM2166ZSR SZM2166Z SZM2166ZPCK-EVB1 dk39 SZM-2166 szm2166 600S100JW250 12NXJBB 600S100 42 dbm 2.4GHz amplifier schematic PDF

    Untitled

    Abstract: No abstract text available
    Text: RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM,


    Original     		RFPA2226 RFPA2226 54Mb/s 26dBm 27dBm MCH185A5R6DK MCH182CN104K 600S1R6JW250 PDF

    Untitled

    Abstract: No abstract text available
    Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar  P1dB =33.5dBm at 5V, 2.4GHz  802.11g 54Mb/s Class AB Performance


    Original     		SZP-2026Z SOF-26 SZP-2026Z 54Mb/s 26dBm 27dBm SZP-2026Zâ DS110620 PDF

    600S100JW250

    Abstract: cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18
    Text: RFPA2226 RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM, VCC 6V


    Original     		RFPA2226 RFPA2226 54Mb/s 26dBm 27dBm MCH185A5R6DK MCH182CN104K 600S1R6JW250 600S100JW250 cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18 PDF

    SZP-3026Z

    Abstract: ma 529 SZP3026 SOF-26 3.5GHz BJT
    Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		SZP-3026Z SOF-26 SZP-3026Z DS091202 SZP3026Z* SZP3026Z-EVB1 ma 529 SZP3026 SOF-26 3.5GHz BJT PDF

    Untitled

    Abstract: No abstract text available
    Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		SZP-3026Z SOF-26 SZP-3026Z DS110620 SZP3026ZSQ SZP3026ZSR SZP3026Z PDF

    Untitled

    Abstract: No abstract text available
    Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT


    Original     		SZM-2166Z SZM-2166Z DS110620 SZM2166ZSQ SZM2166ZSR SZM2166ZPCK-EVB1 SZM2166ZPCK-EVB2 SZM2166ZPCK-EVB3 PDF

    600S100JW250X

    Abstract: 113 marking code transistor ROHM SZP3026 phemt transistor 30Ghz MCH185A1R0DK
    Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		SZP-3026Z SZP-3026Z SOF-26 DS110620 SZP3026ZSQ SZP3026ZSR SZP3026Z SZP3026Z-EVB1 600S100JW250X 113 marking code transistor ROHM SZP3026 phemt transistor 30Ghz MCH185A1R0DK PDF

    transistor 2.4GHz amplifier schematic wifi

    Abstract: 600S100JW250 dk39 MCH182CN104K SZM-2166Z SZM - 238 wifi 2.4 ghz pcb layout
    Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT


    Original     		SZM-2166Z SZM-2166Z applicaZM-2166Z SZM-2166Z-EVB1 SZM-2166Z-EVB2 SZM-2166Z-EVB3 EDS-105840 transistor 2.4GHz amplifier schematic wifi 600S100JW250 dk39 MCH182CN104K SZM - 238 wifi 2.4 ghz pcb layout PDF

    SZM-2166Z

    Abstract: dk39 LL1608-FH4N7J SZM2166 LL1608FH4N7J transistor 2.4GHz amplifier schematic wifi F24G 43S21
    Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT


    Original     		SZM-2166Z SZM-2166Z SZM2166Z SZM2166ZPCK-EVB1 SZM2166ZPCK-EVB2 SZM2166ZPCK-EVB3 DS100622 dk39 LL1608-FH4N7J SZM2166 LL1608FH4N7J transistor 2.4GHz amplifier schematic wifi F24G 43S21 PDF

    SZP-2026Z

    Abstract: rf transistor 2.5GHz SOF-26 transistor 2.4GHz amplifier schematic
    Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology


    Original     		SZP-2026Z SOF-26 SZP-2026Z SZP-2026Z-EVB1 SZP-2026Z-EVB2 EDS-104611 rf transistor 2.5GHz SOF-26 transistor 2.4GHz amplifier schematic PDF

    SZM-2066Z

    Abstract: transistor 2.4GHz amplifier schematic wifi SZM-2066 600s100 transistor 2.4GHz class ab amplifier schematic SZM2066Z
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		SZM-2066Z SZM-2066Z 11b/g 60052R4CW250 600S100JW250 0805HQ 12XJBB LL1608FH4N7J LL1608FH10J transistor 2.4GHz amplifier schematic wifi SZM-2066 600s100 transistor 2.4GHz class ab amplifier schematic SZM2066Z PDF

    SZP-2026

    Abstract: No abstract text available
    Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology


    Original     		SZP-2026Z SOF-26 SZP-2026Z SZP-2026Z" DS110620 SZP2026ZSQ SZP2026ZSR SZP2026Z SZP-2026 PDF

    SZM-2066Z

    Abstract: transistor 2.4GHz amplifier schematic wifi SZM-2066 transistor 2.4GHz amplifier schematic
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2 W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		SZM-2066Z SZM-2066Z 11b/g LL1608FH10J SZM2066Z SZM2066ZPCK-EVB2 SZM2066ZPCK-EVB3 DS100622 transistor 2.4GHz amplifier schematic wifi SZM-2066 transistor 2.4GHz amplifier schematic PDF

    Untitled

    Abstract: No abstract text available
    Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This


    Original     		SZM-3066Z SZM-3066Z EDS-104608 PDF

    vpc3 c

    Abstract: TRANSISTOR MARKING CODE R2A SZM-2066Z
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		SZM-2066Z SZM-2066Z 11b/g 0805HQ 12XJBB LL1608FH4N7J LL1608FH10J DS110620 vpc3 c TRANSISTOR MARKING CODE R2A PDF

    Untitled

    Abstract: No abstract text available
    Text: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features     RFPA3026 P1dB =33.6dBm at 5V RF IN 802.11g 54Mb/s Class AB Performance On-Chip Output Power Detector  Input Prematched to ~5


    Original     		RFPA3026 RFPA3026 54Mb/s 26dBm 570mA 27dBm 513mA DS120110 PDF