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    Kyocera AVX Components 600S100JW250XT

    CAP CER 10PF 250V NP0 0603
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    DigiKey 600S100JW250XT Reel 2,000 500
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    600S100JW250XT Cut Tape 1,113 1
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    600S100JW250XT Digi-Reel 1
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    Mouser Electronics 600S100JW250XT 3,039
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    TTI 600S100JW250XT Reel 500
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    Richardson RFPD 600S100JW250XT 1,500
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    Kyocera AVX Components 600S100JW250XTV

    Silicon RF Capacitors / Thin Film 250V 10pF Tol 5% Las Mkg Vertical
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    Mouser Electronics 600S100JW250XTV
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    Kyocera AVX Components 600S100JW250XT4K

    Silicon RF Capacitors / Thin Film 250V 10pF Tol 5% Las Mkg
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    Mouser Electronics 600S100JW250XT4K
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    AMERICAN ATC600S100JW250XT

    CAPACITOR, CERAMIC, 250 V, C0G, 0.00001 uF, SURFACE MOUNT, 0603 (Also Known As: 600S100JW250XT)
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    Quest Components ATC600S100JW250XT 2,720
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    600S100JW250X Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    600S100JW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 5% NP0 0603 Original PDF

    600S100JW250X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOF-26

    Abstract: SZP-3026Z
    Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		PDF SZP-3026Z SOF-26 SZP-3026Z EDS-104666 SZP-3026Z* SZP-3026Z-EVB1 SOF-26

    Untitled

    Abstract: No abstract text available
    Text: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026  P1dB =33.6dBm at 5V  802.11g 54Mb/s Class AB Performance RF IN  POUT =26dBm at 2.5% EVM, VCC 5V, 570mA  POUT =27dBm at 2.5% EVM,


    Original     		PDF RFPA3026 54Mb/s 27dBm 513mA 26dBm 570mA DS120110

    SZP-3026Z

    Abstract: ma 529 SZP3026 SOF-26 3.5GHz BJT
    Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		PDF SZP-3026Z SOF-26 SZP-3026Z DS091202 SZP3026Z* SZP3026Z-EVB1 ma 529 SZP3026 SOF-26 3.5GHz BJT

    Untitled

    Abstract: No abstract text available
    Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		PDF SZP-3026Z SOF-26 SZP-3026Z DS110620 SZP3026ZSQ SZP3026ZSR SZP3026Z

    600S100JW250X

    Abstract: 113 marking code transistor ROHM SZP3026 phemt transistor 30Ghz MCH185A1R0DK
    Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		PDF SZP-3026Z SZP-3026Z SOF-26 DS110620 SZP3026ZSQ SZP3026ZSR SZP3026Z SZP3026Z-EVB1 600S100JW250X 113 marking code transistor ROHM SZP3026 phemt transistor 30Ghz MCH185A1R0DK

    Untitled

    Abstract: No abstract text available
    Text: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features     RFPA3026 P1dB =33.6dBm at 5V RF IN 802.11g 54Mb/s Class AB Performance On-Chip Output Power Detector  Input Prematched to ~5


    Original     		PDF RFPA3026 RFPA3026 54Mb/s 26dBm 570mA 27dBm 513mA DS120110