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    ic 7493 block diagram

    Abstract: No abstract text available
    Text: HY531OOOA Series HYUNDAI 1M X 1 -b it CMOS DRAM DESCRIPTION The HY531 OOOA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531 OOOAutilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531OOOA HY531 HY531000Ato 300mil 1AB01-20-MAY95 HY531000A HY531000AS HY531000ALS HY531000AJ ic 7493 block diagram

    Untitled

    Abstract: No abstract text available
    Text: - H Y U N D A I H Y M 5 3 6 2 A M - S e r i e s 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ and eight HY531OOOA in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling


    OCR Scan     		PDF 36-bit HYM536200A HY514400A HY531OOOA 22nFdecoupling HYM536200AM/ALM HYM536200AMG/ALMG DQ0-DQ35) 1CD04-01-FEB94

    HYM536100AM

    Abstract: No abstract text available
    Text: » H Y U N D A I H Y M 5 3 6 1 A M - S e r i e s 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5361OOA is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531OOOA in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling


    OCR Scan     		PDF 36-bit HYM5361OOA HY514400A HY531OOOA 22nFdecoupling HYM536100AM/ALM HYM5361OOAMG/ALMG DQ0-DQ35) 1CC04-01-FEB94 HYM536100AM

    HYM5361

    Abstract: HYM536100AMG hym536100
    Text: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling


    OCR Scan     		PDF 36-bit HYM536100Ais HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-00-MAYW HYM536100A 1CC04-00-MAY93 HYM5361 HYM536100AMG hym536100

    HYM536220

    Abstract: HY5118160 HYM536220W70
    Text: •HYUNDAI HYM536220 W-Series 2M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CM OS DRAM module consisting of four HY5118160 in 42/42 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling


    OCR Scan     		PDF HYM536220 36-bit HYM536220 HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG 1cd06-01-sep94 HYM536220W70

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 3 10 0 0 A SEMICONDUCTOR 1M X S e rie s 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000A 300mil 1AB05-10-APR93 HY531000AS HY531000ALS HY531000AJ HY531000AU

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I H Y 5 3 1 A S e r i e s 1M X 1-bit CMOS DRAM DESCRIPTION The HY531000A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000A HY531000Ato 300mil 1AB05-10-APR94 HY531000AS HY531000ALS HY531000AJ HY531000AU

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8 -b it CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000C HY531000A 22/iF HYM581000CM/CLM 1BB07-10-M G0Q174S DDQ17M3

    Yundai

    Abstract: No abstract text available
    Text: • HY531000A 1Mx1, Fast Page mode DESCRIPTION T h is fa m ily is a 1M b it d y n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 1-bit c o n fig u ra tio n w ith F a st P age m ode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design


    OCR Scan     		PDF HY531000A HY531000ALS HY531000ALJ) Yundai

    HYM536100AM

    Abstract: HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai
    Text: » H Y U N D A I H Y M 5 3 6 1 0 0 A 1M _ X M - S e r ie s 36-bit CMOS DRAM MODULE DESCRIPTION HyM5361 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a72 pin glass-epoxy printed circuit board. 0.22uFdecouDlina


    OCR Scan     		PDF HYM536100A 36-bit HY514400A HY531000A 22uFdecouDlina HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-01-FEB94 HYM536100AM HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai

    HYM591000B

    Abstract: No abstract text available
    Text: •HYUNDAI HYM591000B Series SEMICONDUCTOR 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|xF decoupling capacitor is


    OCR Scan     		PDF HYM591000B HY514400A HY531000A HYM591000BM/BLM BB06-00-M 1BB06-00-M 1BB06-00-MAY93

    Untitled

    Abstract: No abstract text available
    Text: H Y531000A H Y U N D A I SEMICONDUCTOR S e r ie s 1M x 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF Y531000A HY531000A 300mil Schottk31000A 300BSC 100BSC 1AB05-10-APR93

    HY531000ALJ60

    Abstract: HY531000ALJ HY531000ALJ-60 HY531000AJ pin diagram of ic 7493 hbsc
    Text: H Y 5 3 1 0 0 0 A ‘ • H Y U N D A I S e r ie s 1M x 1-bit CMOS DRAM DESCRIPTION The HY531000A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000A HY531000A TheHY531000Autilizes HY531000Ato 300mil 300BSC 3-11deg 1AB01-20-MAY95 HY531000AS HY531000ALJ60 HY531000ALJ HY531000ALJ-60 HY531000AJ pin diagram of ic 7493 hbsc

    HYM536120

    Abstract: No abstract text available
    Text: -HYUNDAI HYM536120 W-Series 1M x 36-bit CMOS DRAM MODULE DESCraPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22j»F decoupling


    OCR Scan     		PDF HYM536120 36-bit HY5118160 HY531000A HYM536120W/LW HYM536120WG/LWG DQ0-DQ35) DDGSS34

    HYM536120WG70

    Abstract: HYM536120W70 HYM536120 HY5118160
    Text: H Y M 5 3 6 1 2 0 W - S e r ie s IM I 36-bit CMOS DRAM MODULE - H Y U N D A I DESCRIPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SQJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM536120 36-bit HYM536120 HY5118160 HY531000A HYM536120W/LW HYM536120WG/LWG 004f1 17WIN. HYM536120WG70 HYM536120W70