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    TE Connectivity 641256-1

    CONN QC TAB 14-18AWG 0.250 CRIMP
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    TE Connectivity 2141256-1

    CONN RCPT HSG 2POS 9.40MM
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    TE Connectivity 1-2141256-1

    2POS,AMP MCP6.3/4.8K,REC HSG,COD
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    Phoenix Contact 1412566

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    41256 Datasheets (10)

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    ECAD Model
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    PDF
    41256 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    41256 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    41256 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    41256 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    41256 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    4125-632-AL RAF Electronic Hardware ROUND MALE-FEMALE STANDOFFPLAIN Original PDF
    4125-632-B RAF Electronic Hardware ROUND MALE-FEMALE STANDOFFPLAIN Original PDF
    4125-632-N RAF Electronic Hardware ROUND MALE-FEMALE STANDOFFNO FIN Original PDF
    4125-632-S RAF Electronic Hardware ROUND MALE-FEMALE STANDOFFPLAIN Original PDF
    4125-632-SS RAF Electronic Hardware ROUND MALE-FEMALE STANDOFFPLAIN Original PDF

    41256 Datasheets Context Search

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    D41256

    Abstract: 41256 NEC D41256 apd412 41256P PD41256 RX5A NPD412 D412 JJPD41256
    Text: pP D 41256 262,144 X 1-Bit D y n a m ic NMOS RAM F U IC /W NEC E lectron ics Inc. D escription Pin Configurations The 41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,


    OCR Scan     		uPD41256 144-word D41256 41256 NEC D41256 apd412 41256P PD41256 RX5A NPD412 D412 JJPD41256 PDF

    30-pin simm memory

    Abstract: 433 Mc MC-41256A9B MC-41256 30 pin simm SIMM 30-pin MC-41256A9-12 MC-41256A9-15 uPD41256 "30 pin simm"
    Text: NEC M C -4 1 2 5 6 A 9 2 6 2 , 1 4 4 x 9 -B IT D Y N A M IC N M O S R A M M O D U LE NEC Electronics Inc. P R E L IM IN A R Y IN F O R M A T IO N Pin C o n fig u ra tio n s D escrip tio n The M C -41256A9 is a 262,144-word by 9 -b it NM OS d y n a m ic RAM m odule, designed to operate from a


    OCR Scan     		MC-41256A9 144-word uPD41256 MC-41256A9 83-001979B 30-pin simm memory 433 Mc MC-41256A9B MC-41256 30 pin simm SIMM 30-pin MC-41256A9-12 MC-41256A9-15 "30 pin simm" PDF

    MC41256A8B12

    Abstract: MC41256A8B-12 41256 MC-41256A8A-12 MC-41256A8-15
    Text: SEC MC-41256A8 262,144 x 8-BIT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. Description Pin C onfigurations T h e M C -4 1 2 5 6 A 8 is a 262,144-w ord by 8 -bit N M O S R A M m o d u le d e s ig n e d to op erate from a s in g le + 5 -v o lt p o w e r sup p ly. A d v a n c e d d y n a m ic circuitry, in c lu d in g a


    OCR Scan     		MC-41256A8 30-Pin MC-41256A8A 144-w MC-41256A8 MC41256A8B12 MC41256A8B-12 41256 MC-41256A8A-12 MC-41256A8-15 PDF

    41256 dram

    Abstract: MX8012 41256 41256 ram 41256 MEMORY Continuously Variable Slope Delta Modulator mx8003
    Text: M A C R O NIX INC 34E D • 5bûûôô5 0QQQ177 b • 'T : 7 7 - I3 MX8012 PRELIMINARY m FEATURES GENERAL DESCRIPTIONS • Adaptive Delta Modulation is used. • Variable speech length con­ trolled by STOP input. • Direct drive of 41256 or 411024. • Internal power up reset.


    OCR Scan     		0QQQ177 MX8012 000sq. 41256 dram 41256 41256 ram 41256 MEMORY Continuously Variable Slope Delta Modulator mx8003 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEC MC-41256A4 262,144 x 4-BIT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. PRELIMINARY INFORMATON Description Pin Configuration T he M C -41256A4 is a 262,144-w ord by 4 -b it NM OS d y n a m ic RAM m odule, d e signed to o p erate fro m a sin g le + 5 V pow er supply. A dvanced d yn a m ic c irc u itry ,


    OCR Scan     		MC-41256A4 -41256A4 144-w 22-Pin MC-412S6A4A C-41256A4 PDF

    41256

    Abstract: Siemens HYB 41256-12 41256 dram 41256-12 41256-15 41256-12 dram 41256 ram
    Text: SIEMENS 262,144-Bit Dynamic RAM • • • • • • • • • • • • • HYB 41256-10/-12/-15 262,144 x 1-bit organization Industry standard 16 pins Single + 5 V supply, ± 10 % tolerance Low power dissipation: - 358 mW active max. - 28 mW standby (max.)


    OCR Scan     		144-Bit Q67100-Q380 Q67100-Q346 Q67100-Q347 41256 Siemens HYB 41256-12 41256 dram 41256-12 41256-15 41256-12 dram 41256 ram PDF

    n341256p

    Abstract: N341256SJ Nkk N341256SJ-15 41256 N341256 n341256p-15 N341256SJ-15 n341256sj15 n341256sj12 N341256SJ20
    Text: / CMOS SRAM 256K-BIT 32K X 8 NKK 41256 • Features • CM O S SR AM organized as 32,768 X 8bits • Single +5.0V (±10% ) Power Supply • High Speed A ccess time : 12/15/20/25ns • Low power operation N 3 41256 (Standard type) 28pin Plastic D IP(300m il)


    OCR Scan     		256K-BIT N341256 12/15/20/25ns 256-L 28pin -28pin n341256p N341256SJ Nkk N341256SJ-15 41256 N341256 n341256p-15 N341256SJ-15 n341256sj15 n341256sj12 N341256SJ20 PDF

    Untitled

    Abstract: No abstract text available
    Text: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A9 is a 262,144-word by 9-bit DRAM mod­ ule designed to operate from a single + 5-volt power supply. Advanced dynamic NMOS circuitry, Including a


    OCR Scan     		MC-41256A9 144-word pPD41256 MC-41256A9 PDF

    Siemens HYB 41256-12

    Abstract: 41256-12 dram 41256-15 511000BJ-70 Q67100-Q539 41256-12 514400J-10 514256BZ-70 514400J-80 511000BZL-70
    Text: Summary of Types Summary of Types Type Ordering Code Package Description Page Memory Components cont’d HYB 41256-10 Q67100-Q380 P-DIP-16 DRAM (Access Time 100 ns) 35 HYB 41256-12 Q67100-Q346 P-DIP-16 DRAM (Access Time 120 ns) 35 HYB 41256-15 Q67100-Q347


    OCR Scan     		511000B-60 511000B-70 511000B-80 511000BJ-60 511000BJ-70 511000BJ-80 511000BJL-60 511000BJL-70 511000BL-60 511000BL-70 Siemens HYB 41256-12 41256-12 dram 41256-15 Q67100-Q539 41256-12 514400J-10 514256BZ-70 514400J-80 511000BZL-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: PARADIGM 256K Static RAM 32K x 8-Bit PDM 41256SA PDM 41256LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 12,15, 20, 25, 35,45, and 55ns □ Low power operation - 41256SA Active: 400mW typ. Standby: 150 mW (typ.)


    OCR Scan     		41256SA 41256LA PDM41256SA 400mW PDM41256LA 350mW MIL-STD883, PDM41256 PDF

    Paradigm 41256

    Abstract: 41256 ram PDM41256 PDM41256SA
    Text: PARADIGM 256K Static RAM 32K x 8-Bit 41256SA 41256LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 , 20 and 25ns M il: 1 2 ,1 5 , 20, 25, 35, 45, and 55ns □ Low pow er operation - PDM 41256SA Active: 400m W typ. Standby: 150 m W (typ.)


    OCR Scan     		PDM41256SA PDM41256LA 400mW PDM41256LA 350mW MIL-STD-883, PDM41256 designer41256SA Paradigm 41256 41256 ram PDF

    MC-41256A9B

    Abstract: D41256 41256A MC41256A9A12 MC-41256A9B-12 l0830
    Text: S ÍF C M C -41256A 9 2 6 2 ,1 4 4 X 9-B IT d y n a m ic n m o s r a m m o d u le N E C Electronics Inc. Description Pin Configurations T h e M C -4 1 2 5 6 A 9 is a 2 6 2 ,1 4 4 -w o rd b y 9 -b it N M O S R A M m o d u le d e s ig n e d to o p e ra te fro m a s in g le + 5 - v o lt


    OCR Scan     		-41256A 30-Pln MC-41256A9A 004116B B3-004128B 83-001660B MC-41256A9B D41256 41256A MC41256A9A12 MC-41256A9B-12 l0830 PDF

    256KD

    Abstract: No abstract text available
    Text: NEC M C -41256A 5 2 6 2 ,1 4 4 x 5-B IT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. PRELIMINARY INFORMATION /^ q k Í ^ April 1986 c * sp j>Mrv> Pin Configuration Description T h e M C -4 1 2 5 6 A 5 is a 2 62,144-w o rd by 5 -b it N M O S d yn am ic R A M m odule, designed to o p erate from a


    OCR Scan     		MC-41256A5 144-word /PD41256 256KD PDF

    AS11D

    Abstract: C-41256A8 30-pin SIMM
    Text: NEC MC-41256A8 262,144 X 8-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A8 is a 262,144-word by 8-bit NMOS RAM module designed to operate from a single + 5-volt power supply. Advanced dynamic circuitry, including a


    OCR Scan     		MC-41256A8 30-Pin 144-word /iPD41256 MC-41256A8 83IH-6594B AS11D C-41256A8 30-pin SIMM PDF

    D41256

    Abstract: MC-41256 41256 MC-41256A8-15 MC-41256A8-12 30-pin simm memory "30 pin simm"
    Text: SEC MC-41256A8 262,144 x 8-BIT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations T he M C-41256A8 is a 262,144-w ord by 8 -b it NM OS d y n a m ic RAM m odule, designed to operate fro m a sin g le + 5 V pow er supply. Advanced d yn a m ic circ u itry ,


    OCR Scan     		MC-41256A8 144-word MC-41256A8 D41256 MC-41256 41256 MC-41256A8-15 MC-41256A8-12 30-pin simm memory "30 pin simm" PDF

    41256

    Abstract: 41256-15 41256 ram Siemens HYB 41256-12 41256 dram 41256-12 41256-12 dram 41256-10 41256 MEMORY C511
    Text: S IE M E N S 262,144-Bit Dynamic RAM HYB 41256-10/-12/-15 • 262,144 x 1-bit organization • Industry standard 16 pins • Single + 5 V supply, ± 10 % tolerance • Low power dissipation: - 358 mW active max. - 28 mW standby (max.) • 100 ns access time


    OCR Scan     		144-Bit Q67100-Q380 Q67100-Q346 Q67100-Q347 41256 41256-15 41256 ram Siemens HYB 41256-12 41256 dram 41256-12 41256-12 dram 41256-10 41256 MEMORY C511 PDF

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 PDF

    NEC IC D 553 C

    Abstract: D41256 41256
    Text: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module W NEC Electronics Inc. Description Pin Configuration T h e M C -4 1 2 5 6 A 9 is a 262,144-w ord by 9-bit DRAM m o d ­ ule desig ned to o p e ra te from a single + 5-volt po w er 30-Pin SIMM supply. A d v an c ed d y n am ic N M O S circuitry, including a


    OCR Scan     		MC-41256A9 144-w cycles1256A9 NEC IC D 553 C D41256 41256 PDF

    MC-41256A8-10

    Abstract: MC-421000A9 1MX9
    Text: N E C 30E D ELECTRONICS INC NEC • b457S2S DOSSIER b ■ T '+ b - Z Z - o l MEMORY PRODUCTS Dynam ic R A M M odules Maximum Power Dissipation mW Organization Process Access Time (ns) 8Kx9 100K 11 13 -4 .5 8000 8000 (Note 2) 42 MC-41256A8-10 MC-41256A8-12


    OCR Scan     		MC-163 MC-41256A8-10 MC-41256A8-12 MC-41256A9-10 MC-41256A9-12 MC-421000A8-80 MC-421000A8-10 C-421OOOA8-12 MC-4210O0B8-80 MC-42100 MC-421000A9 1MX9 PDF

    M41256A

    Abstract: MSC2304 MSC2304-10YS9 MSC2304-15YS9 41256A DRAM MSC2304-12YS9
    Text: OKI semiconductor MSC2304YS9/KS9_ 262,144 BY 9 BIT DYNAMIC RAM MODULE < Page Mode Type > GENERAL DESCRIPTION The O ki M S C 2 3 0 4 Y S 9 /K S 9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords x 9 bit NM OS dynam ic random a cce ss m em ory com posed of nine 2 5 6 K DRAM s in p la stic leaded c h ip carrier M S M 41256A JS . The


    OCR Scan     		MSC2304YS9/KS9_ 1256A MSM41256AJS; MSC2304YS9/KS9 2304YS9 18jiimt) MSC2304YS9/KS9 SC2304YS9/KS9 M41256A MSC2304 MSC2304-10YS9 MSC2304-15YS9 41256A DRAM MSC2304-12YS9 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC M C -4 1 2 5 6 A 9 2 6 2 ,1 4 4 X 9-B IT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The MC-41256A9 is a 262,144-word by 9-bit NMOS dynam ic RAM module, designed to operate from a single +5 V power supply. Advanced dynamic circuitry,


    OCR Scan     		MC-41256A9 144-word eight/jPD41256 1664B PDF

    Untitled

    Abstract: No abstract text available
    Text: M E C M C-41256A8 2 6 2 ,1 4 4 X 8-B IT d y n a m ic n m o s r a m m o d u le . NEC Electronics Inc. Description Pin Configurations T h e M C -4 1 2 5 6 A 8 is a 2 6 2 ,1 4 4 -w o rd b y 8 -b it N M O S R A M m o d u le d e s ig n e d to o p e ra te fro m a s in g le + 5 - v o lt


    OCR Scan     		C-41256A8 83-001660B PDF

    Untitled

    Abstract: No abstract text available
    Text: PARADIGM TECHNOLOGY INC PARADIGM H'lE D feTMlO^O 0000Q33 0 256K Static RAM 32K x 8-Bit PDM 41256S PDM 41256L Features Description □ High speed access times Com'l: 1 5 ,1 7 ,2 0 ,2 5 ,3 5 and 45ns M il: 2 0 ,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation


    OCR Scan     		0000Q33 41256S 41256L PDM41256S 400mW PDM41256L 350mW MIL-STD883, PDM41256 412S6S/L PDF

    41256

    Abstract: BIOS and Kernel Developer’s Guide (BKDG) For AMD Family 11h Processors Socket S1g2 Processor Functional Data Sheet SBI Temperature Sensor Interface (SB-TSI) SBI Temperature Sensor Interface SB-TSI AMD 40821 Socket S1g2 Processor Functional 40821 APIC21 Socket S1g2 Processor
    Text: 41256 Rev 3.00 - July 07, 2008 AMD Family 11h Processor BKDG Cover page BIOS and Kernel Developer’s Guide BKDG For AMD Family 11h Processors Advanced Micro Devices 1 41256 Rev 3.00 - July 07, 2008 AMD Family 11h Processor BKDG 2005–2008 Advanced Micro Devices, Inc. All rights reserved.


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