a10u
Abstract: B724e
Text: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.
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MSM514101B/BL
304-Word
MSM514101B/BL
1024cycles/16ms,
128ms
a10u
B724e
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Untitled
Abstract: No abstract text available
Text: O K M S M I S e m iœ n d u c to r 6 4 1 6 4 C 4-Bit, Single-Chip Microcontroller DESCRIPTION The MSM64164C is a high-performance CMOS 4-bit, single-chip microcontroller that has a built-in 256nibble RAM, 20 I/O ports, a buzzer output, a serial port, a 2-channel RC oscillation type A /D converter,
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MSM64164C
256nibble
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MSM7547
Abstract: MSM7547MS-K a03 amplifier a03 audio amplifier
Text: O K I Semiconductor MSM7547 Voice Signal Level Control LSI GENERAL DESCRIPTION The MSM7547 is an LSI for Audio Signal Level adjustment for telephone set, etc. Conventionally, its circuit has been made within individual unit, such as amplifiers, resistors and
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MSM7547_
MSM7547
16-pin
OP16-P-3QO-K)
MSM7547
MSM7547MS-K
5424D
0022E00
MSM7547MS-K
a03 amplifier
a03 audio amplifier
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ODE28
Abstract: No abstract text available
Text: SÔE D O f t . i • b7E424G GD14712 446 « O K I J b e m i c o n d u c t o r MSC7125-XX O K I T - S 2 . - 1S-Æ 9 SEMICONDUCTOR GROUP 5 x 7 DOT MATRIX, 8 -DIGIT GENERAL DESCRIPTION The MSC7125-xx is a Bi-CMOS dot matrix display controller for vacuum fluorescent
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b7E424G
GD14712
MSC7125-XX
16-bit
MSC7125-xx
ODE28
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301767
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 1664 A/AL 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The MSM511664A/AL is a new generation dynamic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the MSM511664A/AL is OKI's CMOS silicon gate process technology.
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536-Word
16-Bit
MSM511664A/AL
16-bit.
cycles/32ms
b724240
301767
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MH 7474
Abstract: OKI 5205 LHi 958 LHi 954 BV 17234 dsa 362 7474 ic specifications KGF1608 gsm amplifier 4564 features of ic 7474
Text: O K I Semiconductor KGF1608_ G aA s C eram ic Pow er FET for GSM and TD M A A p plications D E S C R IP T IO N The KGF1608 is a high-power, high-efficiency GaAs power FET that features high gain at high currents, w ith the ultra-low-impedance drive required for ISM, PHS and PCS applications. This device is designed
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KGF1608
KGF1608
33dBm)
2424Q
L72424D
226TD
MH 7474
OKI 5205
LHi 958
LHi 954
BV 17234
dsa 362
7474 ic specifications
gsm amplifier 4564
features of ic 7474
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MSM51V17180-70
Abstract: MSM51V17180-80
Text: O K I Semiconductor MSM51V17180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is OKI's CMOS silicon gate process technology.
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MSM51V17180
576-Word
18-Bit
MSM51V17180
MSM51VI7180
2048cycles/32ms
MSM51V17180-70
MSM51V17180-80
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marne
Abstract: MSM5117400
Text: O K I Semiconductor MSC23832-XXBS16/DS16 [PygOfl^DGUSlD^? 8,388,608-Word by 32-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The OKI M SC 23832-xxBS16/D S16 is a fully decoded 8,388,608-word x 32-bit CM OS dynamic Random Access Memory module composed of sixteen 16-Mb DRAM s in SOJ M SM 5117400 packages mounted
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MSC23832-xxBS16/DS16
608-Word
32-Bit
MSC23832-xxBS16/DS16
16-Mb
MSM5117400)
72-pin
marne
MSM5117400
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CT 1975 - sam
Abstract: CT 1975 sam MSM6373-329 MSM6374-007 TB 2929 Ho PM641
Text: O K I Semiconductor MSM6375/4/3/2-XXX 1 M-bit/512K-bit/256K-bit/128K-bit M ASK ROM S P E E C H SY N T H ESIZ ER G E N E R A L D ESCRIPTIO N The MSM6375 series is an ADPCM speech synthesis LSI utilizing a CMOS speech pro cessor circuit in conjunction with a built-in
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MSM6375/4/3/2-XXX
M-bit/512K-bit/256K-bit/128K-bit
MSM6375
12-bit
MSM6376
b72424D
CT 1975 - sam
CT 1975 sam
MSM6373-329
MSM6374-007
TB 2929 Ho
PM641
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MSM514256
Abstract: ZIP20-P-400 B72L
Text: O K I Semiconductor MSM5 1 4 2 5 6 C/CL_ 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word x 4-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM514256C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514256C/CL is
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MSM514256C
MSM514256CL
144-Word
MSM514256C/CL
144-word
a20-pin
26/20-pin
20-pin
MSM514256
ZIP20-P-400
B72L
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MSM51V17100
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V17100 _ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.
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MSM51VI7100_
216-Word
MSM51V17100
cycles/32ms
MSM51V17100
b724E4G
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S82V16520
Abstract: 533 BA MS82V16520 QFP100-P-1420-0 AX2002 S82V
Text: E2L0056-28-91 % This version: Sep. 1998 O K I Semiconductor M S82V16 5 2 0 2 62 ,14 4 -W o rd x 3 2 -B it x 2 -B a n k Synchronous G raphics R AM D E S C R IP TIO N The MS82V16520 is a synchronous graphics random access m em ory organized as 256 K w o r d s x 3 2
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E2L0056-28-91
MS82V16520
MS82V16520
72424G
DD275Qti
S82V16520
533 BA
QFP100-P-1420-0
AX2002
S82V
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MSM511001A-70
Abstract: MSM OKI 80 PIN
Text: SfiE D • b?2M2M0 O K I QD127bf i b07 H I O K I J SEMI CONDUCTOR 6R0UP O K I semiconductor _ 2.3MSM511001 A _ 1 ,0 4 8 ,5 7 6 -W O R D x 1 -B IT D Y N A M IC R A M _ _ _ GENERAL DESCRIPTION The MSM511001A is a new generation dynamic RAM organized as 1,048,576 words x1 bit. The
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00127bfl
MSM511001A
576-WORD
MSM511001A
L7242M0
DD12777
b724240
DD1S77Ã
MSM511001A-70
MSM OKI 80 PIN
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM56V16800 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800 is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and
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MSM56V16800
576-Word
MSM56V16800
cycles/64
b75424D
0D204DS
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S82V
Abstract: No abstract text available
Text: E2L0056-28-91 O K I S em iconductor M S82V16 5 2 0 262,144-Word x 32-Bit x 2 -B a n k Synch ro nous G raph ics R A M D E S C R IP T IO N The MS82V16520 is a synchronous graphics random access memory organized as 256 K w ords x 32 bits x 2 banks. This device can operate up to 166 MHz by using synchronous interface. In addition, it has 8-column
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E2L0056-28-91
S82V16
144-Word
32-Bit
MS82V16520
b72424D
MS82V16520
002750b
S82V
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MSM511664-10
Abstract: MSM511664-80
Text: SflE D • b724240 0012=111 5 ^ O K I ■ OKIJ SEMICONDUCTOR GROUP : O K I semiconductor_—r-qfe-z*»MSM 511664 _ 65,536-WORD X ~ h 16-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511664 is a new generation dynamic RAM organized as 65,536 words x 16 bits. Thé
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b724240
MSM511664
536-WORD
16-BIT
MSM511664
DH-DQ15
b72424U
MSM511664---
b724H4D
MSM511664-10
MSM511664-80
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MSC1192RS
Abstract: th02 MSC1191 MSC1192 be44g G012405 gg153ti hi fi speaker
Text: 4bE D b72H240 00123^7 ÔÔ4 « O K I J T ~ 1H -OS'-C? O K I semiconductor MSC1191/1192 DIRECT DRIVE SPEAKER AMPLIFIER GENERAL DESCRIPTION O K I SEMICONDUCTOR GROUP M SC1191/1192 is a low voltage, low current consumption type pow er am p lifier 1C developed for
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b72H240
MSC1191/1192
MSC1191/1192
MSC1191
MSC1192
DIP8-P-600)
OP8-P-250-K)
b724240
MSC1191/MSC1192â
T-74-05-01
MSC1192RS
th02
be44g
G012405
gg153ti
hi fi speaker
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st p513
Abstract: 0040H MSM65513 MSM65P513
Text: sflE j> m b7a4aL40 ooi3ôb3 =iT3 « O K I J O K I semiconductor MSM65513/65P513 ok i semiconductor croup _ O KI O R IG IN A L HIGH P E R FO R M A N C E C M O S 8 BIT SIN G LE CHIP M IC R O C O N T R O LLE R Q x* _ n .a G E N E R A L DESCRI PTI ON M SM65513 is a high-perform ance 8-bit single-chip controller th at em ploys Oki's original nX-8/50
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b724240
0013flb3
MSM65513/65P513
MSM65513
nX-8/50
10MHz
MSM65P513,
b724240
st p513
0040H
MSM65P513
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