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    513 S12 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    64991-S12-3RLF Amphenol Communications Solutions 64991-S12-3RLF-GUIDE PIN 100 SHRD HDR Visit Amphenol Communications Solutions
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    513 S12 Price and Stock

    Nisshinbo Micro Devices R1513S121B-E2-KE

    IC REG LINEAR 1.2V 300MA 6HSOP
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    DigiKey R1513S121B-E2-KE Cut Tape 71 1
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    R1513S121B-E2-KE Reel 1,000
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    Nisshinbo Micro Devices R1513S121B-E2-YE

    IC REG LINEAR 1.2V 300MA 6HSOP
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    onsemi R1513S121B-E2-YE

    - Tape and Reel (Alt: R1513S121B-E2-YE)
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    Avnet Americas R1513S121B-E2-YE Reel 4 Weeks 385
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    Glenair Inc G1513S1216A3A

    ADAPTER - Bulk (Alt: G1513S1216A3A)
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    Glenair Inc G1513S124A1.5A

    ADAPTER - Bulk (Alt: G1513S124A1.5A)
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    513 S12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A2310

    Abstract: No abstract text available
    Text: H Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 513 Series Features Description Pin Configuration • Frequency Range: 5 to 500␣MHz The 513 Series is a thin-film bipolar RF amplifier that uses resistive feedback and active bias


    Original     		PDF 500MHz 24-Volt 5963-2553E A2310

    A2310

    Abstract: No abstract text available
    Text: Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 513 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz The 513 Series is a thin-film bipolar RF amplifier that uses resistive feedback and active bias to provide temperature compensation and increased immunity to


    Original     		PDF 24-Volt A2310

    lead acid batteries exide

    Abstract: NGSO1206D6HS0SA NGSO120230HS0CA NGS6021200HS0FA NGSB060330HS0CA NGSO120060HS0CA NGS6020300HS0FA NGS6020240HS0FA NGSB120130HS0CA NGS6021400HS0FA
    Text: Industrial Batteries – Network Power Sonnenschein Solar Safe storage capacity for renewable energy. Specifications The compact alternative for smaller solar applications. Sonnenschein Solar batteries are specially designed for small to medium performance requirements in


    Original     		PDF NXSSOTEPDF00106 lead acid batteries exide NGSO1206D6HS0SA NGSO120230HS0CA NGS6021200HS0FA NGSB060330HS0CA NGSO120060HS0CA NGS6020300HS0FA NGS6020240HS0FA NGSB120130HS0CA NGS6021400HS0FA

    BU9716AK

    Abstract: 05-A022 513 s12
    Text: Standard ICs Picture cell driver for STN LCD driver BU9716AK/BU9716AKV The BU9716AK and BU9716AKV are man-machine interface ICs designed for applications such as multi-media portable terminals. Specifically. these products are used as driver ICs for operating mode display LCD panels in portable terminals,


    Original     		PDF BU9716AK/BU9716AKV BU9716AK BU9716AKV BU9718KV BUS71 047pF -70i02 05-A022 513 s12

    a-2896

    Abstract: HCS12
    Text: DOCUMENT NUMBER S12IICV2/D HCS12 Inter-Integrated Circuit IIC Block Guide V02.08 Original Release Date: 08 SEP 1999 Revised: Jun 3, 2004 8/16 Bit Division,TSPG Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its


    Original     		PDF S12IICV2/D HCS12 S12IICV2/D a-2896

    HCS12

    Abstract: No abstract text available
    Text: DOCUMENT NUMBER S12IICV2/D HCS12 Inter-Integrated Circuit IIC Block Guide V02.07 Original Release Date: 08 SEP 1999 Revised: Apr 11, 2003 8/16 Bit Division,TSPG Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its


    Original     		PDF S12IICV2/D HCS12 S12IICV2/D

    hp laptop display LVDS connector pins

    Abstract: LVDS-008 hp laptop display LVDS connector pins datasheet milford lcd displaylink HP 30 pin lcd flex cable pinout laptop display LVDS connector pins laptop display LVDS connector pins datasheet 10G BERT GETEK FR4
    Text: Table of contents Chapter 1 - Introduction to LVDS 1.1 The trend to LVDS 1-1 1.2 Getting speed with low noise and low power 1-1 1.3 LVDS ICs 1-4 1.4 Bus LVDS 1-4 1.5 LVDS applications 1-5 Chapter 2 - Using LVDS 2.1 Why low swing differential? 2-1 2.2 An economical interface – save money, too


    Original     		PDF

    HCS12

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12IICV2/D Freescale Semiconductor, Inc. HCS12 Inter-Integrated Circuit IIC Block Guide V02.08 Original Release Date: 08 SEP 1999 Revised: Jun 3, 2004 8/16 Bit Division,TSPG Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its


    Original     		PDF S12IICV2/D HCS12 S12IICV2/D

    PC MOTHERBOARD CIRCUIT diagram

    Abstract: Ericsson AXD 311 Manual motherboard test points BT 342 project mobile MOTHERBOARD CIRCUIT diagram bluetooth development board schematic free circuit diagram of motherboard 0190A MOTHERBOARD CIRCUIT diagram PC MOTHERBOARD CIRCUIT diagram download free
    Text: EBCP RoseRed Bluetooth Development Platform User Guide Copyright 2002 ARM Limited. All rights reserved. ARM DUI 0190A EBCP RoseRed Bluetooth Development Platform User Guide Copyright © 2002 ARM Limited. All rights reserved. Release Information Change history


    Original     		PDF

    PC MOTHERBOARD CIRCUIT diagram

    Abstract: motherboard test points Ericsson AXD 311 Manual ARM JTAG Programmer Schematics bluetooth development board schematic circuit diagram of motherboard pc motherboard schematics free circuit diagram of motherboard how to build a motherboard BT 342 project
    Text: Bluetooth Development Platform User Guide Copyright 2000-2001 ARM Limited. All rights reserved. ARM DUI 0135D Bluetooth Development Platform User Guide Copyright © 2000-2001 ARM Limited. All rights reserved. Release Information Change history Date Issue


    Original     		PDF 0135D PC MOTHERBOARD CIRCUIT diagram motherboard test points Ericsson AXD 311 Manual ARM JTAG Programmer Schematics bluetooth development board schematic circuit diagram of motherboard pc motherboard schematics free circuit diagram of motherboard how to build a motherboard BT 342 project

    ARM Architecture Reference Manual

    Abstract: ARM1020E VFP10 ARM10 CP15 IEEE754 5-101 opa 232 IEEE-754 ARM10200E ufc 101
    Text: VFP10 Vector Floating-point Coprocessor Rev 1 Technical Reference Manual Copyright 2001 ARM Limited. All rights reserved. ARM DDI 0178B VFP10™ Vector Floating-point Coprocessor Technical Reference Manual Copyright © 2001 ARM Limited. All rights reserved.


    Original     		PDF VFP10TM 0178B VFP10 VFP10DFTCKEN VFP10DFTRESET VFP10DFTWCKEN VFP10RSTSAFE VFP10SAFE VFP10WCLK ARM Architecture Reference Manual ARM1020E ARM10 CP15 IEEE754 5-101 opa 232 IEEE-754 ARM10200E ufc 101

    FLL101ME

    Abstract: FLL101
    Text: FLL101ME L-Band Medium & High Power GaAs FETs FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: hadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL101ME is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL101ME FLL101ME It035 FLL101

    FSX017L

    Abstract: S12MAG Eudyna Devices X BAND power amplifiers
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		PDF FSX017LG FSX017LG 12GHz. FSX017L S12MAG Eudyna Devices X BAND power amplifiers

    to8 g1s

    Abstract: transistor 9567
    Text: Q avan tek UTO/UTC 513 Series Thin-Film Cascadable Amplifier 5 to 500 MHz FEATURES APPLICATIONS • Frequency Range: 5 to 500 MHz • Medium Power Output: +16 dBm Typ • Medium Gain: 17 dB (Typ) • Temperature Compensated • 24-Volt Supply • IF/RF Amplification


    OCR Scan     		PDF 24-Volt 50-ohm to8 g1s transistor 9567

    1683

    Abstract: No abstract text available
    Text: PIN 1 2 COMI 3 / / COM2 5 6 7 a 9 10 11 12 13 IF 1A 2F 2A 56 3F 3A 4F 4A 1G IB 2G 2B S5 30 3B 4G 4B IE 1C 2E 2C S4 3E 3C 4£ 4C SI ID S3 2D S2 S7 3D S9 40 26 COM2 COM3 COM4 4 COMI COM3 COM4 PIN 14 15 16 17 IS 19 2D 21 22 23 24 25 COMI SS S16 5F 5A 6F 6A 539


    OCR Scan     		PDF 54X12 1683

    FSX017LG/001-E1

    Abstract: FSX017LG
    Text: FSXOl 7LG G en eral Purpose Ga As F E i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 8 V Gate-Source Voltage VGS -5 V Total Power Dissipation Ptot 220 mW Storage Temperature Tstg -65 to +175


    OCR Scan     		PDF 2000Q. FSX017LG/001-E1 FSX017LG

    Untitled

    Abstract: No abstract text available
    Text: FLLIOIME L-Bcind Medium & High Power GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs •5 V 4.16 w Total Power Dissipation Pt Tc = 25°C Storage Temperature


    OCR Scan     		PDF

    FLC081xp

    Abstract: FLC081
    Text: FLC081XP GaA s F E T and H E M Ï Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current >DSS Test Conditions VDS = 5V, Vos = 0V Min. - Limit Typ. Max. 300 450 Unit mA Transconductance 9m Vqs = 5V, IQS = 200mA


    OCR Scan     		PDF FLC081XP 200mA 10pcs. FLC081xp FLC081

    AS4C1M16FS

    Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
    Text: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423


    OCR Scan     		PDF AS29F002 j4S29F03 AS29F040 AS29F080 AS29F200 AS29F400 AS291X008 AS29LL800 AS29LV002 AS29LV008 AS4C1M16FS 1Mx16 flash 3.3v 1Mx8 SRAM

    TFK U 3212 M

    Abstract: TFK U 3212 telefunken rc 890 cd LIN 5642 G tfk 623 ta 8659 cn str f 6268 cd 3313 eo PEX 8603 ORP 12
    Text: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark T E M IC D ansk c /o A E G Industri A/S R oskildevej 8 -1 0 2 620 A lbeitslund Tel: 45 4 2 6485 22 Fax: 45 43 6262 28 T E M IC T E L E F U N K E N m icro ­ electro n ic G m bH K ruppstrasse 6


    OCR Scan     		PDF

    GaAs FETs

    Abstract: No abstract text available
    Text: FLM7177-12DA Internally Matched Power iaAs F E l s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 57.6 w Total Power Dissipation Tc = 25°C pt Storage Temperature


    OCR Scan     		PDF FLM7177-12DA 3100mA GaAs FETs

    9536XL

    Abstract: HW-133 HW-133-VQ64 A2 5160 64-pin VQFP xc9572xl TTL-45 ISA-96
    Text: A1 D3ÍA11 A2 D2 A1D) A3 Dlf A9Ì TTL9 A4 DO(AB) AID6 A5 TTLO TTL3 TTL6 P1 P1 P1 S I—24S1-22 GND B2 D6(D1) S1-35 TTL5 C2 B3 TTL8 C3 TTL10 B4 TTL11 C4 TTL12 B5 TTL13 C5 TTL15 C6 TTL16 C7 T TL7 S I—19 D4ÍA12) TTL2 T T L4 S1-20 B1 S1-25 TTL1 AID5 A6 TTL14


    OCR Scan     		PDF S1-Z4-S1-22 S1-20 TTL10 TTL12 TTL14 TTL18 TTL44 TTL27 TTL29 TTL31 9536XL HW-133 HW-133-VQ64 A2 5160 64-pin VQFP xc9572xl TTL-45 ISA-96

    SRAM 64KX8 5V

    Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
    Text: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164


    OCR Scan     		PDF AS7C164 AS7C256 AS7C512 AS7C513 AS7C3513 AS7C1024 AS7C31024 AS7C1026 AS7C31026 AS7C1025 SRAM 64KX8 5V 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40

    FLM7177-12DA

    Abstract: No abstract text available
    Text: FLM7177-12DA r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 41 dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM7177-12DA UJ115 41dBm -45dBc 30dBm Voltage077 FLM7177-12DA