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    512K16 Price and Stock

    Alliance Memory Inc AS1C512K16P-70BIN

    IC PSRAM 8MBIT PARALLEL 48FBGA
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    Alliance Memory Inc AS1C512K16PL-70BIN

    IC PSRAM 8MBIT PARALLEL 48FBGA
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    Vishay Sfernice CHP2512K16R7FNT

    RES SMD THICK FILM 2512
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    Alliance Memory Inc AS1C512K16P-70BINTR

    IC PSRAM 8MBIT PARALLEL 48FBGA
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    Infineon Technologies AG CYK512K16SCAU-70BAXI

    IC PSRAM 8MBIT PARALLEL 48FBGA
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    512K16 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES  Access Time of 140, 150, 200ns  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection  Hardware and Software Data Protection • 68 lead, 40mm Hermetic CQFP Package 501


    Original
    WE512K16-XG4X 512Kx16 200ns 128Kx16 MIL-STD-883 MIL-PRF-38534 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture


    Original
    WSF512K16-XXX 512KX16 120ns ICCx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture


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    WSF512K16-XXX 512KX16 120ns ICCx16 MIL-STD-883 MIL-PRF-38534 PDF

    SD10

    Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
    Text: White Electronic Designs 512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins


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    WSF512K16-XXX 512KX16 120ns 120ns 01HXX 02HXX SD10 SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X PDF

    ARINC 629 sim

    Abstract: m38510/55501 AMP ARINC-629 SIM MT72038 smd cmos 4435 CQFP 240 arinc 629 controller P2X smd CERAMIC PIN GRID ARRAY CPGA lead frame arinc 629
    Text: The Microelectronic Specialists Product SHORT FORM January 2001 AEROFLEX UTMC UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE ■ 1760 ■ ■ ■ ■ ■ ■ ■ ■ 84,132 84 1.0E6* Q,V 5962-92118 ■ ■ ■ ■ ■ ■ ■


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    UT69151 800-645-UTMC 800-THE-1553 800-THE-1553 ARINC 629 sim m38510/55501 AMP ARINC-629 SIM MT72038 smd cmos 4435 CQFP 240 arinc 629 controller P2X smd CERAMIC PIN GRID ARRAY CPGA lead frame arinc 629 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES  Access Times of 35ns SRAM and 90ns (FLASH)  100,000 Erase/Program Cycles  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture  Packaging


    Original
    WSF512K16-XXX 512KX16 120ns PDF

    TBA 129-5

    Abstract: WS512K16-XXX
    Text: White Electronic Designs 512K16-XXX ADVANCED* 512Kx16 SRAM MODULE FEATURES Access Times 17, 20, 25, 35ns Data I/O Compatible with 3.3V devices MIL-STD-883 Compliant Devices Available 2V Minimum Data Retention for battery back up operation Packaging Commercial, Industrial and Military Temperature


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    WS512K16-XXX 512Kx16 MIL-STD-883 256Kx16 I/O9-16 512K16 TBA 129-5 WS512K16-XXX PDF

    6 pin headphone PCB Mounted 3.5mm Stereo jack

    Abstract: 5 pin PCB Mounted 3.5mm Stereo jack PCB Mounted 3.5mm Stereo plug 8 pin headphone PCB Mounted 3.5mm Stereo jack jack p2 3.5mm 11 pin PCF8574T SBF1001HL jack p4 3.5mm UM9709 3.5mm jack circuit diagram
    Text: USER MANUAL HSM/UM9808 SPHERIC Demo Board Version 1.0 Philips Semiconductors SPHERIC Demo Board Version 1.0 User Manual HSM/UM9808 REVISION HISTORY Version Remarks 1.0 First release Purchase of Philips I2C components conveys a license under the Philips I 2C patent to use the


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    HSM/UM9808 H8SM05 SBF1001HL PCF8574; HSM/UM9709, 6 pin headphone PCB Mounted 3.5mm Stereo jack 5 pin PCB Mounted 3.5mm Stereo jack PCB Mounted 3.5mm Stereo plug 8 pin headphone PCB Mounted 3.5mm Stereo jack jack p2 3.5mm 11 pin PCF8574T SBF1001HL jack p4 3.5mm UM9709 3.5mm jack circuit diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: 512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture


    Original
    WSF512K16-XXX 512KX16 120ns MIL-STD-883 MIL-PRF-38534 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES  Access Time of 140, 150, 200ns  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection  Hardware and Software Data Protection • 68 lead, 40mm Hermetic CQFP Package 501


    Original
    WE512K16-XG4X 512Kx16 200ns 128Kx16 PDF

    WE512K16-XG4X

    Abstract: No abstract text available
    Text: White Electronic Designs 512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES Access Time of 140, 150, 200ns Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection • 68 lead, 40mm Hermetic CQFP Package 501 Hardware and Software Data Protection


    Original
    WE512K16-XG4X 512Kx16 200ns 128Kx16 512K16 MIL-STD-883 WE512K16-XG4X PDF

    WE512K16-XG4X

    Abstract: No abstract text available
    Text: 512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES • Access Time of 120, 150, 200ns ■ Automatic Page Write Operation ■ Packaging: ■ Page Write Cycle Time: 10ms Max ■ Data Polling for End of Write Detection • 68 lead, 40mm Hermetic CQFP Package 501


    Original
    WE512K16-XG4X 512Kx16 200ns 128Kx16 512K16 MIL-STD-883 WE512K16-XG4X PDF

    Untitled

    Abstract: No abstract text available
    Text: 512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 64K bytes each


    Original
    WSF512K16-XXX 512KX16 120ns 66-pin, 68-lead, 120ns PDF

    WE512K16-XG4X

    Abstract: No abstract text available
    Text: 512K16-XG4X HI-RELIABILITY PRODUCT 512Kx16 CMOS EEPROM MODULE FEATURES • Access Time of 140, 150, 200ns ■ Automatic Page Write Operation ■ Packaging: ■ Page Write Cycle Time: 10ms Max ■ Data Polling for End of Write Detection • 68 lead, 40mm Hermetic CQFP Package 501


    Original
    WE512K16-XG4X 512Kx16 200ns 128Kx16 512K16 MIL-STD-883 WE512K16-XG4X PDF

    WS512K16-XXX

    Abstract: No abstract text available
    Text: White Electronic Designs 512K16-XXX ADVANCED* 512Kx16 SRAM MODULE FEATURES Access Times 17, 20, 25, 35ns Data I/O Compatible with 3.3V devices MIL-STD-883 Compliant Devices Available 2V Minimum Data Retention for battery back up operation Packaging Commercial, Industrial and Military Temperature


    Original
    WS512K16-XXX 512Kx16 MIL-STD-883 256Kx16 I/O9-16 512K16 WS512K16-XXX PDF

    WS512K16-XXX

    Abstract: TBA 129-5
    Text: 512K16-XXX 512Kx16 SRAM MODULE ADVANCED* FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging •44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Flatpack (Package 209) ■ Organized as two banks of 256Kx16


    Original
    WS512K16-XXX 512Kx16 MIL-STD-883 256Kx16 I/O9-16 512K16 WS512K16-XXX TBA 129-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: a WHITE /MICROELECTRONICS 512K16-XXX 512Kx16SRAM /FLASH MODULE, S M D 5962-96901 FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 35ns S R A M and 90ns (FLASH) ■ 10,000 E rase/Program Cycles ■ A ccess Tim es of 70ns (SRAM) and 120ns (FLASH)


    OCR Scan
    WSF512K16-XXX 512Kx16SRAM 120ns 120ns PDF

    FD11O

    Abstract: No abstract text available
    Text: YZÀ 512K16-XXX I/WHITE / M I C R O E L E C T R O N I C S 512Kx16 SRAM/FLASH MODULE P R E L IM IN A R Y • FEATURES FLASH MEMORY FEATURES • A ccess Tim es of 35nS S R A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A ccess Tim es of 70nS (SR A M ) and 120nS (FLASH)


    OCR Scan
    WSF512K16-XXX 512Kx16 120nS 66-pin, 120nS FD11O PDF

    Vitarel Microelectronics

    Abstract: VMS128K8M-100 32K8 VMS128K8-100 2015 static ram static ram 2015
    Text: VITAREL MICROELECTRONICS V M S 1 2 8 K 8 M -1 00 1M -B IT C M O S S TA TIC RAM 32 Pin C eram ic DIP - May 1987 D E S C R IP T IO N The VM S128K 8M -100 is a 128K module x 8 bits asynchronous, CMOS static random access memoiy on a 32 pin ceramic DIP. It's very low standby power


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    VMS128K8M-100 100ns 512K16 Vitarel Microelectronics 32K8 VMS128K8-100 2015 static ram static ram 2015 PDF

    SF512K16

    Abstract: No abstract text available
    Text: WHITE / M I C R O E L E C T R O N I C S W 512K16-XXX 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • A ccess Tim es o f 35ns SRAM and 90ns (FLASH] ■ 10,000 E rase/Program Cycles ■ A ccess Tim es o f 70ns (SRAM) and 120ns (FLASH)


    OCR Scan
    SF512K16-XXX 512Kx16 120ns 68-lead, 120ns 01HXX 02HXX 01HMX SF512K16 PDF

    AO-16

    Abstract: No abstract text available
    Text: a W 512K16-XG4X WHITE /MICROELECTRONICS 512Kx16 CM OS EEPROM MODULE FEATURES • ■ A ccess Tim e of 1 2 0 ,1 5 0 , 200ns ■ A u to m a tic Rage W rite O peration Packaging: ■ Page W rite Cycle Tim e: 10ms M ax • ■ D ata P olling fo r End of W rite D etection


    OCR Scan
    16-XG 512Kx16 200ns 128Kx16 512K16 AO-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: TT 512K16-XXX M/HITE /MICROELECTRONICS 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture


    OCR Scan
    WSF512K16-XXX 512Kx16 120ns 66-pin, 68-lead, 120ns 01HXX 02HXX PDF

    Untitled

    Abstract: No abstract text available
    Text: a 512K16-XXX WHITE /MICROELECTRONICS 512Kx16 SRAM/FLASH MODULE PRELIM INARY * FEATURES FLASH MEMORY FEATURES • A cce ss Tim es of 35nS SR A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A cce ss Tim es of 70nS (SR A M ) and 120nS (FLASH) ■


    OCR Scan
    WSF512K16-XXX 512Kx16 120nS 120nS 512KX PDF

    Untitled

    Abstract: No abstract text available
    Text: TT 512K16-XXX M/HITE /MICROELECTRONICS 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH M E M O R Y FEATURES • Access Tim es o f 35ns SRAM and 90ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Tim es o f 70ns (SRAM) and 120ns (FLASH) ■ S ector A rchitecture


    OCR Scan
    WSF512K16-XXX 512Kx16 120ns 01HXX 02HXX 01HMX PDF