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    5.7GHZ LOW NOISE AMPLIFIER Search Results

    5.7GHZ LOW NOISE AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    5.7GHZ LOW NOISE AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LTC6946-3

    Abstract: LTC6946 1810MHz VCO 16 pin TB 112MA sdi 0818 LTC5541 QFN-28 LTC6946IUFD-1 CI LM 4800 Marking Code h06
    Text: LTC6946 Ultralow Noise and Spurious 0.37GHz to 5.7GHz Integer-N Synthesizer with Integrated VCO DESCRIPTION FEATURES n n n n n n n n n n n n Low Noise Integer-N PLL with Integrated VCO –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise


    Original     		PDF LTC6946 37GHz 226dBc/Hz 274dBc/Hz 157dBc/Hz 600MHz LTC5590/LTC5591 LTC5592/LTC5593 LTC5569 LTC6946-3 LTC6946 1810MHz VCO 16 pin TB 112MA sdi 0818 LTC5541 QFN-28 LTC6946IUFD-1 CI LM 4800 Marking Code h06

    LTC5541

    Abstract: LTC5588-1 LTC6946
    Text: LTC6946 Ultralow Noise and Spurious 0.37GHz to 5.7GHz Integer-N Synthesizer with Integrated VCO DESCRIPTION FEATURES n n n n n n n n n n n n Low Noise Integer-N PLL with Integrated VCO –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise


    Original     		PDF LTC6946 37GHz 226dBc/Hz 274dBc/Hz 157dBc/Hz 600MHz LTC5590/LTC5591 LTC5592/LTC5593 LTC5569 LTC5541 LTC5588-1 LTC6946

    ltc6946

    Abstract: ALC 653 LTC5541 6-946 sdi 0818 HHM1589B1 LTC5588-1
    Text: LTC6946 Ultralow Noise and Spurious 0.37GHz to 5.7GHz Integer-N Synthesizer with Integrated VCO DESCRIPTION FEATURES n n n n n n n n n n n n Low Noise Integer-N PLL with Integrated VCO –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise


    Original     		PDF LTC6946 37GHz 42/LTC5543 LTC5590/LTC5591 LTC5592/LTC5593 LTC5569 LTC5588-1 600MHz 300MHz ALC 653 LTC5541 6-946 sdi 0818 HHM1589B1

    CAP, 0603 4.7pF

    Abstract: SOF-26 SZP-5026 5.7Ghz low noise amplifier MCH184CN105K 802.11a Amplifier Schematics 5250 SZP-5026Z 600S5
    Text: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar


    Original     		PDF SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366 CAP, 0603 4.7pF SOF-26 SZP-5026 5.7Ghz low noise amplifier MCH184CN105K 802.11a Amplifier Schematics 5250 600S5

    Untitled

    Abstract: No abstract text available
    Text: RFPA5026 RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,


    Original     		PDF RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA CH185A1R8DK MCH182CN104K

    Untitled

    Abstract: No abstract text available
    Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,


    Original     		PDF RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA MCH182CN104K 600S4R7CW250

    SZP-5026

    Abstract: 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 SZP-5026Z MLCC rework recommended land pattern for 0402 cap e483
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		PDF SZP-5026Z SOF-26 SZP-5026Z SZP5026Z SZP5026Z-EVB1 SZP5026Z-EVB2 15GHz 35GHz DS091202 SZP-5026 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 MLCC rework recommended land pattern for 0402 cap e483

    Untitled

    Abstract: No abstract text available
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		PDF SZP-5026Z SOF-26 SZP-5026Z DS111220 SZP5026ZSQ SZP5026ZSR SZP5026Z 15GHz

    Untitled

    Abstract: No abstract text available
    Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026  P1dB =33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT =25dBm at 2.5% EVM,


    Original     		PDF RFPA5026 33dBm 54Mb/s 25dBm 680mA DS120110

    Untitled

    Abstract: No abstract text available
    Text: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar


    Original     		PDF SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366

    SZP-5026Z

    Abstract: SZP5026Z SZP-5026 Schematics 5250 SZP-5026Z-EVB1 SZP-5026Z-EVB2 bipolar transistor ghz s-parameter SOF-26 marking 535 RF
    Text: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with


    Original     		PDF SZP-5026Z protecSZP-5026Z SZP-5026Z" 35GHz SZP-5026Z-EVB2 SZP-5026Z* SZP-5026Z-EVB1 SOF-26 EDS-105366 SZP5026Z SZP-5026 Schematics 5250 SZP-5026Z-EVB1 SZP-5026Z-EVB2 bipolar transistor ghz s-parameter SOF-26 marking 535 RF

    SOF-26

    Abstract: SZP-5026 SZP-5026Z 5.7Ghz low noise amplifier 600S4R7
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		PDF SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366 SOF-26 SZP-5026 5.7Ghz low noise amplifier 600S4R7

    600S4R7

    Abstract: 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 szp-5026z 600S5R6 600S4R7cw250
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		PDF SZP-5026Z SZP-5026Z SOF-26 DS110620 SZP5026ZSQ SZP5026ZSR SZP5026Z SZP5026Z-EVB1 600S4R7 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 600S5R6 600S4R7cw250

    MCH18

    Abstract: ZO13 0805HQ-5N6XJBB
    Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,


    Original     		PDF RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA DS120110 MCH18 ZO13 0805HQ-5N6XJBB

    transistor u8 2w

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with


    Original     		PDF SZP-5026Z EDS-105366 SZP-5026Z" SZP-5026Z* SZP-5026Z-EVB1 SZP-5026Z-EVB2 35GHz SOF-26 transistor u8 2w

    RX-2-G

    Abstract: tx2g tx 2G rx2g Rx 2G qam circuit RX-2G TX-2G power amplifier 5 ghz bluetooth pinout
    Text: AWL9566 802.11a/n PA, LNA & Switch with 802.11b/g/n RX/TX/Bluetooth Switch ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • 3% Dynamic EVM @ POUT = +18 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 18 dB of Linear Power Gain in 5 GHz Band • 3 dB Noise Figure in 5 GHz Band


    Original     		PDF 11a/n 11b/g/n RX-2-G tx2g tx 2G rx2g Rx 2G qam circuit RX-2G TX-2G power amplifier 5 ghz bluetooth pinout

    RF5608

    Abstract: No abstract text available
    Text: RF5608 Proposed 3.0V TO 3.6V, DUAL-BAND FRONT-END MODULE Features SWTX 1 GND 2 VCC PDET5 GND VCC VCC VCC GND TX5_N Package Style: 32-Pin, 5mmx5mmx0.9mm 32 31 30 29 28 27 26 25 24 GND 23 RX5 PA5 Integrated 2.5GHz & 5GHZ PA’s, Diplexer LNA for both High and


    Original     		PDF RF5608 32-Pin, 16dBm, IEEE802 11a/b/g/n 8500MHz, 10MHz DS090330 RF5608

    circuit diagram of wireless door lock system

    Abstract: wireless mobile charging through microwaves working and block diagram of ups DSSS transceiver CIRCUIT DIAGRAM FOR WIRELESS DATA MODEM SA8016 RF transceiver 2.4GHz 2.4Ghz DSSS radio AD operation amplifier SA1630
    Text: W RELESS BUSINESS LINE Wireless LAN Benno Ritter W RELESS BUSINESS LINE NNN-FML-Y-1 Wireless LAN Market FToday üOffice environment mobile applications ¥ WLAN adapters or NICs/ PCMCIA cards, WLAN access points ¥ Wireless Fax/Modems terminals üCommerce based applications


    Original     		PDF NNN-FML-Y-26 UMA1021 300MHz-2 NNN-FML-Y-27 NNN-FML-Y-28 circuit diagram of wireless door lock system wireless mobile charging through microwaves working and block diagram of ups DSSS transceiver CIRCUIT DIAGRAM FOR WIRELESS DATA MODEM SA8016 RF transceiver 2.4GHz 2.4Ghz DSSS radio AD operation amplifier SA1630

    power amplifier 5 ghz

    Abstract: RF5328 RF2472 mimo transceiver sot23-5 rf amplifier p12 QFN16 RF sot23-5 amplifier p12
    Text: RF53283.3 V, 5 GHz Linear Power Amplifier RF5328 Preliminary 3.3 V, 5 GHz LINEAR POWER AMPLIFIER VC2 VC3 NC 16 15 14 13 Features „ 11 RF OUT RF IN 2 Input Match 27 dB Typical Gain Across Band Interstage Match Output Match 10 RF OUT RF IN 3 POUT = 18 dBm @ 4% TYP EVM


    Original     		PDF RF53283 RF5328 IEEE802 11a/n RF53Board DS061109 5328WD41013 power amplifier 5 ghz RF5328 RF2472 mimo transceiver sot23-5 rf amplifier p12 QFN16 RF sot23-5 amplifier p12

    alcohol sensor abstract

    Abstract: APP4429 MAX5418 AN44-29 staircase generator app abstract
    Text: Maxim > App Notes > Digital Potentiometers Prototyping and PC-Board Layout Keywords: inexperienced engineer, leakage, environmental contamination, radio frequency, interference, electro static discharge, guard bands, sigma, standard deviation specification, automatic test equipment, ATE, second guaranteed


    Original     		PDF MAX5418: com/an4429 AN4429, APP4429, Appnote4429, alcohol sensor abstract APP4429 MAX5418 AN44-29 staircase generator app abstract

    W2L14Z225M

    Abstract: LLA219C70G225M LTC5569 LTC2271 LTC5584 LTC5585
    Text: LTC2271 16-Bit, 20Msps Serial Low Noise Dual ADC FEATURES DESCRIPTION n The LTC 2271 is a 2-channel, simultaneous sampling 16-bit A/D converter designed for digitizing high frequency, wide dynamic range signals. It is perfect for demanding communications applications with AC performance that


    Original     		PDF LTC2271 16-Bit, 20Msps 16-bit 44LSBRMS. siV/600mW, 530MHz, 31dBm 80dBm, W2L14Z225M LLA219C70G225M LTC5569 LTC5584 LTC5585

    DAP8

    Abstract: LT5579 DAP11 DAP 08 power supply DBP11 LTC2000-11 LTC2000-14 LTC6946 LTC2997
    Text: LTC2000 16-/14-/11-Bit 2.5Gsps DACs Features Description 80dBc SFDR at 70MHz fOUT n >68dBc SFDR from DC to 1000MHz f OUT n 40mA Nominal Full-Scale, ±1V Output Compliant n 10mA to 60mA Adjustable Full-Scale Current Range n Single or Dual Port DDR LVDS and DHSTL Interface


    Original     		PDF LTC2000 16-/14-/11-Bit 80dBc 70MHz 68dBc 1000MHz 78dBc 165dBc/Hz 65MHz DAP8 LT5579 DAP11 DAP 08 power supply DBP11 LTC2000-11 LTC2000-14 LTC6946 LTC2997

    NJS8475S

    Abstract: NJR2117HA NJR2175F NJR2135S NJR2136S NJR2112F NJR2139S NJR2135H NJR2137S ku-band pll lnb
    Text: MICROWAVE DEVICES, COMPONENTS & EQUIPMENTS HIGHTYPEPOWER FET AMPLIFIERS POWER RANGE ou-mrr NJS8600 Series *5.4~5.7GHz 20W TYP. NJR8106 14.0~14.5GHz 2.5W * OTHER FREQUENCY RANGE AVAILABLE ON REQUEST GAIN REMARK 50dB TYP. 50dB TYP. PULSE OR CW Ku/C BAN!3 LOW NOISE CONVERTERS AND MlUIC MODULES


    OCR Scan     		PDF NJS8600 NJR8106 NJR2190 NJR2I50 NJR2155 NJR2177F NJR2117HA NJR2117HW NJR2175F NJR2168 NJS8475S NJR2135S NJR2136S NJR2112F NJR2139S NJR2135H NJR2137S ku-band pll lnb

    m1305 transistor

    Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
    Text: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082


    OCR Scan     		PDF NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM353 NJM1458 NJM2041 m1305 transistor w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw