LTC6946-3
Abstract: LTC6946 1810MHz VCO 16 pin TB 112MA sdi 0818 LTC5541 QFN-28 LTC6946IUFD-1 CI LM 4800 Marking Code h06
Text: LTC6946 Ultralow Noise and Spurious 0.37GHz to 5.7GHz Integer-N Synthesizer with Integrated VCO DESCRIPTION FEATURES n n n n n n n n n n n n Low Noise Integer-N PLL with Integrated VCO –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise
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LTC6946
37GHz
226dBc/Hz
274dBc/Hz
157dBc/Hz
600MHz
LTC5590/LTC5591
LTC5592/LTC5593
LTC5569
LTC6946-3
LTC6946
1810MHz VCO 16 pin
TB 112MA
sdi 0818
LTC5541
QFN-28
LTC6946IUFD-1
CI LM 4800
Marking Code h06
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LTC5541
Abstract: LTC5588-1 LTC6946
Text: LTC6946 Ultralow Noise and Spurious 0.37GHz to 5.7GHz Integer-N Synthesizer with Integrated VCO DESCRIPTION FEATURES n n n n n n n n n n n n Low Noise Integer-N PLL with Integrated VCO –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise
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LTC6946
37GHz
226dBc/Hz
274dBc/Hz
157dBc/Hz
600MHz
LTC5590/LTC5591
LTC5592/LTC5593
LTC5569
LTC5541
LTC5588-1
LTC6946
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ltc6946
Abstract: ALC 653 LTC5541 6-946 sdi 0818 HHM1589B1 LTC5588-1
Text: LTC6946 Ultralow Noise and Spurious 0.37GHz to 5.7GHz Integer-N Synthesizer with Integrated VCO DESCRIPTION FEATURES n n n n n n n n n n n n Low Noise Integer-N PLL with Integrated VCO –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise
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LTC6946
37GHz
42/LTC5543
LTC5590/LTC5591
LTC5592/LTC5593
LTC5569
LTC5588-1
600MHz
300MHz
ALC 653
LTC5541
6-946
sdi 0818
HHM1589B1
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CAP, 0603 4.7pF
Abstract: SOF-26 SZP-5026 5.7Ghz low noise amplifier MCH184CN105K 802.11a Amplifier Schematics 5250 SZP-5026Z 600S5
Text: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar
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SZP-5026Z
SOF-26
SZP-5026Z
SZP-5026Z-EVB1
SZP-5026Z-EVB2
15GHz
35GHz
EDS-105366
CAP, 0603 4.7pF
SOF-26
SZP-5026
5.7Ghz low noise amplifier
MCH184CN105K
802.11a Amplifier
Schematics 5250
600S5
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Untitled
Abstract: No abstract text available
Text: RFPA5026 RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,
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RFPA5026
RFPA5026
33dBm
54Mb/s
25dBm
680mA
CH185A1R8DK
MCH182CN104K
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Untitled
Abstract: No abstract text available
Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,
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RFPA5026
RFPA5026
33dBm
54Mb/s
25dBm
680mA
MCH182CN104K
600S4R7CW250
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SZP-5026
Abstract: 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 SZP-5026Z MLCC rework recommended land pattern for 0402 cap e483
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SOF-26
SZP-5026Z
SZP5026Z
SZP5026Z-EVB1
SZP5026Z-EVB2
15GHz
35GHz
DS091202
SZP-5026
600s5r6cw250
5.7Ghz low noise amplifier
SOF-26
MLCC rework
recommended land pattern for 0402 cap
e483
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PDF
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Untitled
Abstract: No abstract text available
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SOF-26
SZP-5026Z
DS111220
SZP5026ZSQ
SZP5026ZSR
SZP5026Z
15GHz
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Untitled
Abstract: No abstract text available
Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,
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RFPA5026
33dBm
54Mb/s
25dBm
680mA
DS120110
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Untitled
Abstract: No abstract text available
Text: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar
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Original
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SZP-5026Z
SOF-26
SZP-5026Z
SZP-5026Z-EVB1
SZP-5026Z-EVB2
15GHz
35GHz
EDS-105366
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PDF
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SZP-5026Z
Abstract: SZP5026Z SZP-5026 Schematics 5250 SZP-5026Z-EVB1 SZP-5026Z-EVB2 bipolar transistor ghz s-parameter SOF-26 marking 535 RF
Text: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-5026Z
protecSZP-5026Z
SZP-5026Z"
35GHz
SZP-5026Z-EVB2
SZP-5026Z*
SZP-5026Z-EVB1
SOF-26
EDS-105366
SZP5026Z
SZP-5026
Schematics 5250
SZP-5026Z-EVB1
SZP-5026Z-EVB2
bipolar transistor ghz s-parameter
SOF-26
marking 535 RF
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SOF-26
Abstract: SZP-5026 SZP-5026Z 5.7Ghz low noise amplifier 600S4R7
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SOF-26
SZP-5026Z
SZP-5026Z-EVB1
SZP-5026Z-EVB2
15GHz
35GHz
EDS-105366
SOF-26
SZP-5026
5.7Ghz low noise amplifier
600S4R7
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600S4R7
Abstract: 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 szp-5026z 600S5R6 600S4R7cw250
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SZP-5026Z
SOF-26
DS110620
SZP5026ZSQ
SZP5026ZSR
SZP5026Z
SZP5026Z-EVB1
600S4R7
600S0R5CW250
0805HQ-5N6XJBB
Coilcraft 0805
e483
SZP-5026
ZO21
600S5R6
600S4R7cw250
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MCH18
Abstract: ZO13 0805HQ-5N6XJBB
Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,
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RFPA5026
RFPA5026
33dBm
54Mb/s
25dBm
680mA
DS120110
MCH18
ZO13
0805HQ-5N6XJBB
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PDF
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transistor u8 2w
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-5026Z
EDS-105366
SZP-5026Z"
SZP-5026Z*
SZP-5026Z-EVB1
SZP-5026Z-EVB2
35GHz
SOF-26
transistor u8 2w
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RX-2-G
Abstract: tx2g tx 2G rx2g Rx 2G qam circuit RX-2G TX-2G power amplifier 5 ghz bluetooth pinout
Text: AWL9566 802.11a/n PA, LNA & Switch with 802.11b/g/n RX/TX/Bluetooth Switch ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • 3% Dynamic EVM @ POUT = +18 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 18 dB of Linear Power Gain in 5 GHz Band • 3 dB Noise Figure in 5 GHz Band
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11a/n
11b/g/n
RX-2-G
tx2g
tx 2G
rx2g
Rx 2G
qam circuit
RX-2G
TX-2G
power amplifier 5 ghz
bluetooth pinout
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PDF
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RF5608
Abstract: No abstract text available
Text: RF5608 Proposed 3.0V TO 3.6V, DUAL-BAND FRONT-END MODULE Features SWTX 1 GND 2 VCC PDET5 GND VCC VCC VCC GND TX5_N Package Style: 32-Pin, 5mmx5mmx0.9mm 32 31 30 29 28 27 26 25 24 GND 23 RX5 PA5 Integrated 2.5GHz & 5GHZ PA’s, Diplexer LNA for both High and
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RF5608
32-Pin,
16dBm,
IEEE802
11a/b/g/n
8500MHz,
10MHz
DS090330
RF5608
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PDF
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circuit diagram of wireless door lock system
Abstract: wireless mobile charging through microwaves working and block diagram of ups DSSS transceiver CIRCUIT DIAGRAM FOR WIRELESS DATA MODEM SA8016 RF transceiver 2.4GHz 2.4Ghz DSSS radio AD operation amplifier SA1630
Text: W RELESS BUSINESS LINE Wireless LAN Benno Ritter W RELESS BUSINESS LINE NNN-FML-Y-1 Wireless LAN Market FToday üOffice environment mobile applications ¥ WLAN adapters or NICs/ PCMCIA cards, WLAN access points ¥ Wireless Fax/Modems terminals üCommerce based applications
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NNN-FML-Y-26
UMA1021
300MHz-2
NNN-FML-Y-27
NNN-FML-Y-28
circuit diagram of wireless door lock system
wireless mobile charging through microwaves
working and block diagram of ups
DSSS transceiver
CIRCUIT DIAGRAM FOR WIRELESS DATA MODEM
SA8016
RF transceiver 2.4GHz
2.4Ghz DSSS radio
AD operation amplifier
SA1630
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PDF
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power amplifier 5 ghz
Abstract: RF5328 RF2472 mimo transceiver sot23-5 rf amplifier p12 QFN16 RF sot23-5 amplifier p12
Text: RF53283.3 V, 5 GHz Linear Power Amplifier RF5328 Preliminary 3.3 V, 5 GHz LINEAR POWER AMPLIFIER VC2 VC3 NC 16 15 14 13 Features 11 RF OUT RF IN 2 Input Match 27 dB Typical Gain Across Band Interstage Match Output Match 10 RF OUT RF IN 3 POUT = 18 dBm @ 4% TYP EVM
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RF53283
RF5328
IEEE802
11a/n
RF53Board
DS061109
5328WD41013
power amplifier 5 ghz
RF5328
RF2472
mimo transceiver
sot23-5 rf amplifier p12
QFN16 RF
sot23-5 amplifier p12
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alcohol sensor abstract
Abstract: APP4429 MAX5418 AN44-29 staircase generator app abstract
Text: Maxim > App Notes > Digital Potentiometers Prototyping and PC-Board Layout Keywords: inexperienced engineer, leakage, environmental contamination, radio frequency, interference, electro static discharge, guard bands, sigma, standard deviation specification, automatic test equipment, ATE, second guaranteed
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MAX5418:
com/an4429
AN4429,
APP4429,
Appnote4429,
alcohol sensor abstract
APP4429
MAX5418
AN44-29
staircase generator
app abstract
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PDF
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W2L14Z225M
Abstract: LLA219C70G225M LTC5569 LTC2271 LTC5584 LTC5585
Text: LTC2271 16-Bit, 20Msps Serial Low Noise Dual ADC FEATURES DESCRIPTION n The LTC 2271 is a 2-channel, simultaneous sampling 16-bit A/D converter designed for digitizing high frequency, wide dynamic range signals. It is perfect for demanding communications applications with AC performance that
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LTC2271
16-Bit,
20Msps
16-bit
44LSBRMS.
siV/600mW,
530MHz,
31dBm
80dBm,
W2L14Z225M
LLA219C70G225M
LTC5569
LTC5584
LTC5585
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PDF
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DAP8
Abstract: LT5579 DAP11 DAP 08 power supply DBP11 LTC2000-11 LTC2000-14 LTC6946 LTC2997
Text: LTC2000 16-/14-/11-Bit 2.5Gsps DACs Features Description 80dBc SFDR at 70MHz fOUT n >68dBc SFDR from DC to 1000MHz f OUT n 40mA Nominal Full-Scale, ±1V Output Compliant n 10mA to 60mA Adjustable Full-Scale Current Range n Single or Dual Port DDR LVDS and DHSTL Interface
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LTC2000
16-/14-/11-Bit
80dBc
70MHz
68dBc
1000MHz
78dBc
165dBc/Hz
65MHz
DAP8
LT5579
DAP11
DAP 08 power supply
DBP11
LTC2000-11
LTC2000-14
LTC6946
LTC2997
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PDF
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NJS8475S
Abstract: NJR2117HA NJR2175F NJR2135S NJR2136S NJR2112F NJR2139S NJR2135H NJR2137S ku-band pll lnb
Text: MICROWAVE DEVICES, COMPONENTS & EQUIPMENTS HIGHTYPEPOWER FET AMPLIFIERS POWER RANGE ou-mrr NJS8600 Series *5.4~5.7GHz 20W TYP. NJR8106 14.0~14.5GHz 2.5W * OTHER FREQUENCY RANGE AVAILABLE ON REQUEST GAIN REMARK 50dB TYP. 50dB TYP. PULSE OR CW Ku/C BAN!3 LOW NOISE CONVERTERS AND MlUIC MODULES
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OCR Scan
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NJS8600
NJR8106
NJR2190
NJR2I50
NJR2155
NJR2177F
NJR2117HA
NJR2117HW
NJR2175F
NJR2168
NJS8475S
NJR2135S
NJR2136S
NJR2112F
NJR2139S
NJR2135H
NJR2137S
ku-band pll lnb
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PDF
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m1305 transistor
Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Text: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082
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OCR Scan
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NJMOP-07
NJM318
NJM741
NJM2107F
NJM2130
NJM425#
NJM5534
NJM353
NJM1458
NJM2041
m1305 transistor
w431
MRF1421C
Diode LT 4104
NJT1946A
7082a
NJT1949
magnetron 2j42
MSF1422B
magnetron 5kw
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