Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.
|
OCR Scan
|
PDF
|
HYM581000A
HY514400
HYM581000AM
50nYCLE
1BB03-20-MAY93
061MAX.
|
Untitled
Abstract: No abstract text available
Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
PDF
|
HY5117400A
HY5117400A
117400A
1AD27-10-MAY9S
HY5117400AJ
HY5117400AT
Y5117400ASLT
HY5117400AR
|
Untitled
Abstract: No abstract text available
Text: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
PDF
|
HY5117100A
HY5117100A
HY5117100Ato
tRASI13)
1RP02)
1AD20-10-MAY94
HY51171OOA
HY5117100AJ
|
Untitled
Abstract: No abstract text available
Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
|
OCR Scan
|
PDF
|
HY5116400A
HY5116400A
1AD23-10-MAY95
HY5116400AJ
HY5116400ASLJ
HY511
400AT
|
5117404
Abstract: No abstract text available
Text: HY 5117404A Series “H Y U N D A I 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
PDF
|
117404A
HY5117404A
HY5117404A
1A038-10-MAY95
DD45DD
HY5117404AJ
HY5117404ASLJ
HY51174CMAT
5117404
|
Untitled
Abstract: No abstract text available
Text: HYM •HYUNDAI 1M X 532100A M-Series 32-blt CMOS DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit R e t page mode CMOS ORAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted lo r each DRAM.
|
OCR Scan
|
PDF
|
32100A
32-blt
HYM532100A
32-bit
HY514400A
HYM532100AM/ALM
HYM532100AMG/ALMG
compatible004M
750M6
004t1
|
Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 1 7 4 1 0 A • H Y U N D A I S e r ie s 4M X 4-blt CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51 V17410Ais the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY51V17410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
PDF
|
V17410Ais
HY51V17410A
HY51V1741
D36-00-MAY94
4b75Q
HY51V17410A
HY51V17410AJ
HY51V17410ASLJ
HY51V17410AT
HY51V1741OASLT
|
Untitled
Abstract: No abstract text available
Text: HY51V17400A Series •HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
PDF
|
HY51V17400A
HY51V17400A
1AD35-00-MAY95
HY51V17400AJ
HY51V17400ASLJ
HY51V17400AT
HY51V17400ASLT
|
Untitled
Abstract: No abstract text available
Text: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques
|
OCR Scan
|
PDF
|
HY51V16100B
4b750flÃ
1AD43-00-MAY95
QQ04374
HY51V16100BJ
HY51V16100BSU
|
A1HV
Abstract: OQ11 SLTC
Text: “H Y U N D A I 11 • M 11 W I I I H Y 5 1 1 8 2 6 0 J 5e r i e s 4 1 1 w n e us« n « A O o ä i i » .u w or* a o o M in o 1M X 16-bit CMOS nDRAM with 2CAS &WPB DESCRIPTION The HY5118260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118260
|
OCR Scan
|
PDF
|
16-bit
HY5118260
16-bit.
1A016-10-MAY94
GDD3543
HY5118260JC
HY5118260SLJC
A1HV
OQ11
SLTC
|
Untitled
Abstract: No abstract text available
Text: HY51V16400B Series -HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
PDF
|
HY51V16400B
HY51V16400B
1A047-00-MAY95
HY51V16400BJ
HY51V16400BSL
HY51V16400BT
HY51V16400BSLT
|
L0820
Abstract: paa15 1DG02-22-M
Text: <MY II N fi A I HY638100AS/HY6381OOAL 128 X 8 Bit FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a 1,048,576 -bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The HY638100 uses eight common input and output liness and has an output enable pin which operates
|
OCR Scan
|
PDF
|
HY638100AS/HY6381OOAL
HY638100
15/17/20/25ns
HY638100AS
150mA
HY638100AL
8730p
1DG02-22-MAY95
L0820
paa15
1DG02-22-M
|
721 KXC
Abstract: moc 3048
Text: «HYUNDAI H Y 6 2 V 8 1 0 0 A 128K S e r ie s CMOS SRAM X 8 -b it PRELIMINARY DESCRIPTION The HY62V8100A is a high-speed, low power and 131.072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V8100A has a data retention mode that
|
OCR Scan
|
PDF
|
HY62V8100A
128Kx
55/70/85/100ns
-100/120/150/200ns
t00-H
792e0
1DD04-11-MAY95
721 KXC
moc 3048
|
Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYCFL001 Series 1MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFL001 is the Flash memory card consisting of two 5V-only 4Mbit 512Kx8 Flash memory chips in a metal plate housing. The Hyundai Flash memory card is optimized for the application of data and file storage in the
|
OCR Scan
|
PDF
|
HYCFL001
x8/x16
512Kx8)
01-MAR96
4b750flfl
DDD315S
1FC08-01-MAR96
|
|
|
Untitled
Abstract: No abstract text available
Text: • H Y UN D A I HYM5V72A414A F-Series Unbuffered 4M x 72-bit CMOS ORAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A414A is a 4M x 72-bit EDO m ode CMOS DRAM m odule consisting o f eighteen HY51V17804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPFtOM on a 168 pin glass-epoxy printed circuit b o a rd . 0.1 ^F and 0.01 nF
|
OCR Scan
|
PDF
|
HYM5V72A414A
72-bit
HY51V17804B
HYM5V72A414AFG/ATFG/ASLFG/ASLTFG
SpeeC07-10-JAN96
1EC07-10-JANM
|
Untitled
Abstract: No abstract text available
Text: HY62256A Series •HYUNDAI 32K X 8-blt CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
|
OCR Scan
|
PDF
|
HY62256A
speed-55/70/85/100ns
1DC01-11-MAY94
HY62256AP
HY62256ALP
HY62256ALLP
|
HY5117804
Abstract: No abstract text available
Text: •HYUNDAI HYM5V64414A F-Series 4M x 64-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HVM5V64414A is a 4M x 64-bit EDO mode CMOS DRAM m odule consisting of sixteen HY51V17804B in 28.28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O .luF and 0.01 mF
|
OCR Scan
|
PDF
|
HYM5V64414A
64-bit
HVM5V64414A
HY51V17804B
HYM5V64414AFG/ATFG/ASLFGASLTFG
CA50-CAS7)
DQ0-DQ63)
4b750flfl
1EC07-10-JAN96
HY5117804
|
Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 1 6 1 O O A “H Y U N D A I S e r ie s 16MX 1-bit CMOS DRAM PRELIMINARY DESCRIPTION TTie HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
PDF
|
HY51V16100A
HY51V16100A
V16100Ato
1AD21-0O-MAY94
HY51V16100AJ
HY51V16100ASU
HY51V16100AT
HY51V161OOASLT
HY51V16100AR
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM591610 M-Series 16M X 9-bit C M O S DRAM MODULE DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMO S DRAM module consisting of nine HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for
|
OCR Scan
|
PDF
|
HYM591610
HY5117100
22//F
HYM59161OM/LM/TM/LTM
03IMIN.
HYM591610TM/LTM
781MIN.
031MIN.
1BD04-11-MAR94
|
Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM532512 Series 512K X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532512 is a 512K x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY534256 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.
|
OCR Scan
|
PDF
|
HYM532512
32-bit
HY534256
22/iF
HYM532512M
HYM532512MG
1CB01-10-MAY93
|
Untitled
Abstract: No abstract text available
Text: • H Y U N D A I H Y 5 1 V 4 8 0 0 B S e r ie s 5 1 2 K x 8 - b it C M O S D R A M PRELIMINARY DESCRIPTION The HY51V4800B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4800B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
PDF
|
HY51V4800B
HY51V4800B
1AC18-00-MA
HY51V4800BJC
HY51V4800BSUC
HY51V4800BTC
HY51V4800BLTC
|
Untitled
Abstract: No abstract text available
Text: «HYUNDAI HYM5V72A414A K-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V72A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY51V17404A in 24/26 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.22nFdecoupiing
|
OCR Scan
|
PDF
|
HYM5V72A414A
72-bit
HY51V17404A
22nFdecoupiing
HYM5V72A414AKG/ATKG/ASLKG/ASLTKG
010TO
nn47H
4b75Gfifl
|
Untitled
Abstract: No abstract text available
Text: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling
|
OCR Scan
|
PDF
|
HYM536100A
36-bH
36-bit
HY514400A
HY531000A
HYM536100AM/ALM
HYM536100AMG/ALMG
DQ0-DQ35)
|
Untitled
Abstract: No abstract text available
Text: “HYUNDAI HYM5V64124A R-Series Unbuffered 1M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 j.F
|
OCR Scan
|
PDF
|
HYM5V64124A
64-bit
HY51V18164B
HYM5V64124ARG/ATRG/ASLRG/ASLTRG
DQ0-DQ63)
62K1S
0157MOO)
|
