HYM536410MG
Abstract: No abstract text available
Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling
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HYM536410
36-blt
36-bit
HY5117400
HY514100A
HYM53641OM/LM
HYM536410MG/LMG
1CE06-20-MAV94
HYM536410MG
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5116400
1AD02-10-APR93
HY5116400JC
HY5116400LJC
HY5116400TC
HY5116400LTC
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,
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HY51V4403B
050f1
1AC1S-00-MAY94
HY51V4403BJ
HY51V4403BU
HYS1V4403BSU
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Untitled
Abstract: No abstract text available
Text: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117400A
HY5117400A
1AD27-10-MAY94
HY5117400AJ
HY5117400ASLJ
HY5117400AT
HY5117400ASLT
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Untitled
Abstract: No abstract text available
Text: HYM581610 M -Series HYUNDAI 16M x8-bit CMOS DRAM MODULE DESCRIPTION The HYM581610 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5117100 in 24/28 pin SOJ or TSOP-il on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for
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OCR Scan
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HYM581610
HY5117100
22//F
HYM581610M/LM/TM/LTM
350fB
891MAX.
08ffi
HYM581610TM/LTM
361MAX.
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Untitled
Abstract: No abstract text available
Text: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in
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HYCFLF16008
x8/x16
16Mbit
00031flfl
1FC08-01-MAR96
4Li750flfl
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PDF
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Untitled
Abstract: No abstract text available
Text: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,
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5C1M40
HY514403B
1AC15-00-MAY94
4b750fi6
HY514403BJ
HY514403BU
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PDF
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Untitled
Abstract: No abstract text available
Text: HY51V4403B Series “H Y U N D A I 1M x 4-bit CMOS DRAM with 4CÄS DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576x4-bit. The HY51V4403B has four ¿ASs CAS0-3 w hich control corresponding data I/O port in conjunction with OE(eg.CASO controls DQO,
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HY51V4403B
576x4-bit.
HY51V4403B
1AC16-10-MAY95
HY51V4403BJ
HY51V4403BLJ
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HY53C464LS
Abstract: HY53C464
Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C464
330mil
18pin
4b750afl
1AA02-20-APR93
HY53C464S
HY53C464LS
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY5117400
1AD05-20-MAR94
4b750fifi
HY5117400JC
HY5117400UC
HY5117400TC
HY5117400LTC
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PDF
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Untitled
Abstract: No abstract text available
Text: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques
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OCR Scan
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HY51V16100B
4b750flÃ
1AD43-00-MAY95
QQ04374
HY51V16100BJ
HY51V16100BSU
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hy5116100
Abstract: No abstract text available
Text: »HYUNDAI H Y 5 1 1 6 1 O O A S e r ie s 16M X 1 -bit CMOS DRAM DESCRIPTION The H Y 5 1 1 6 1 0 0 A isth e new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide
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HY51161OOA
HY5116100A
HY51161
C1801
4b750Ã
1AD19-10-MAYÃ
HY5116100AJ
HY51161OOASLJ
hy5116100
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T23N
Abstract: au1017 4100 dram HYS14400 IPC 4104
Text: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability
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4b750Ã
DG0Q333
HY514400
HYS14400
M1A1200A-MAY91
-23-n
FEA11
T23N
au1017
4100 dram
IPC 4104
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PDF
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HYM536220
Abstract: HY5118160 HYM536220W70
Text: •HYUNDAI HYM536220 W-Series 2M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CM OS DRAM module consisting of four HY5118160 in 42/42 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling
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HYM536220
36-bit
HYM536220
HY5118160
HY531000A
HYM536220W/LW
HYM536220WG/LWG
1cd06-01-sep94
HYM536220W70
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Untitled
Abstract: No abstract text available
Text: “H Y U N D A I HY29F080 Series 1M x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements High performance - 55 ns access time Internal Programming Algorithms - Automatically programs and verifies data at a
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HY29F080
G-70I,
T-70I,
R-70I
G-70E,
T-70E,
R-70E
G-90I,
T-90I,
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Untitled
Abstract: No abstract text available
Text: “HYUNDAI HY51V4810B Series 5 1 2 K x 8 -b tt CM O S DRAM w it h W r it e - P e r - B it PRELIMINARY DESCRIPTION The HY51V4810B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4810B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51V4810B
HY51V4810B
1AC20-00-MAY94
HY51V4810BJC
HY51V4810BSUC
HY51V4810BTC
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62256A Series •HYUNDAI 32K X 8-blt CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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OCR Scan
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HY62256A
speed-55/70/85/100ns
1DC01-11-MAY94
HY62256AP
HY62256ALP
HY62256ALLP
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PDF
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Untitled
Abstract: No abstract text available
Text: • H Y U N D A I H Y 5 1 V 4 8 0 0 B S e r ie s 5 1 2 K x 8 - b it C M O S D R A M PRELIMINARY DESCRIPTION The HY51V4800B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4800B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51V4800B
HY51V4800B
1AC18-00-MA
HY51V4800BJC
HY51V4800BSUC
HY51V4800BTC
HY51V4800BLTC
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PDF
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Untitled
Abstract: No abstract text available
Text: "V Y U l i n A l m H Y 5 1 1 6 4 0 4 A S e r ie s i u n u i t l 4 M x 4 . b¡t C M 0S DRAM with Extended Data out DESCRIPTION The HY5116404A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5116404A utilizes H yundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5116404A
HY5116404A
1AD37-10-MAY95
HY5116404AJ
HY5116404ASLJ
HY5116404AT
HY5116404ASLT
HY5116404AR
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PDF
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Untitled
Abstract: No abstract text available
Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands
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OCR Scan
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HY29F200T/B
HY29F200
16-Bit)
G-70I,
T-70I
R-701
G-70E,
T-70E,
R-70E
G-90I
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PDF
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HY5118160JC70
Abstract: HY5118160 hy5118160jc 4b75 D014G ms3417 hy5118160jc-70 KS-5 pc145 016B34
Text: HY5118160 Series • • H Y U N D A I 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5118160
16-bit
16-bit.
0-629CB1
10-2g2)
016B3
000M750
HY5118160JC70
hy5118160jc
4b75
D014G
ms3417
hy5118160jc-70
KS-5
pc145
016B34
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PDF
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Untitled
Abstract: No abstract text available
Text: HY514100A Series »HYUNDAI 4M x 1 -bit CMOS DRAM DESCRIPTION The HY514100A is the 2nd generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY514100A
HY514100A
1AC06-30-MAY95
HY514100AJ
HY514100ALJ
HY514100AT
HY514100ALT
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PDF
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Untitled
Abstract: No abstract text available
Text: “ H Y U N D A I H Y 5 8 8 3 2 1 S e rie s _ 256Kx32bit Synchronous Graphics RAM PRELIMINARY Introduction Overview The eight megabit Synchronous Graphics RAM SGRAM is a single port, application specific memory device designed
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OCR Scan
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256Kx32bit
b75Qfl
DDD5370
1SC01-01-NOV96
HY588321
-01-NOV96
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PDF
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Untitled
Abstract: No abstract text available
Text: ‘ H Y U N D A I H Y C F L F 1 6 0 0 4 S e r ie s _ 4MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16004 is the Flash memory card consisting of two 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Flash memory card is optimized tor the application of data and file storage in
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OCR Scan
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x8/x16
HYCFLF16004
16Mbit
4b750flfl
1FC08-01-MAR96
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PDF
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