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    HYM536410MG

    Abstract: No abstract text available
    Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling


    OCR Scan     		PDF HYM536410 36-blt 36-bit HY5117400 HY514100A HYM53641OM/LM HYM536410MG/LMG 1CE06-20-MAV94 HYM536410MG

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400 1AD02-10-APR93 HY5116400JC HY5116400LJC HY5116400TC HY5116400LTC

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,


    OCR Scan     		PDF HY51V4403B 050f1 1AC1S-00-MAY94 HY51V4403BJ HY51V4403BU HYS1V4403BSU

    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A HY5117400A 1AD27-10-MAY94 HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT

    Untitled

    Abstract: No abstract text available
    Text: HYM581610 M -Series HYUNDAI 16M x8-bit CMOS DRAM MODULE DESCRIPTION The HYM581610 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5117100 in 24/28 pin SOJ or TSOP-il on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for


    OCR Scan     		PDF HYM581610 HY5117100 22//F HYM581610M/LM/TM/LTM 350fB 891MAX. 08ffi HYM581610TM/LTM 361MAX.

    Untitled

    Abstract: No abstract text available
    Text: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in


    OCR Scan     		PDF HYCFLF16008 x8/x16 16Mbit 00031flfl 1FC08-01-MAR96 4Li750flfl

    Untitled

    Abstract: No abstract text available
    Text: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,


    OCR Scan     		PDF 5C1M40 HY514403B 1AC15-00-MAY94 4b750fi6 HY514403BJ HY514403BU

    Untitled

    Abstract: No abstract text available
    Text: HY51V4403B Series “H Y U N D A I 1M x 4-bit CMOS DRAM with 4CÄS DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576x4-bit. The HY51V4403B has four ¿ASs CAS0-3 w hich control corresponding data I/O port in conjunction with OE(eg.CASO controls DQO,


    OCR Scan     		PDF HY51V4403B 576x4-bit. HY51V4403B 1AC16-10-MAY95 HY51V4403BJ HY51V4403BLJ

    HY53C464LS

    Abstract: HY53C464
    Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		PDF HY53C464 330mil 18pin 4b750afl 1AA02-20-APR93 HY53C464S HY53C464LS

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5117400 1AD05-20-MAR94 4b750fifi HY5117400JC HY5117400UC HY5117400TC HY5117400LTC

    Untitled

    Abstract: No abstract text available
    Text: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V16100B 4b750flà 1AD43-00-MAY95 QQ04374 HY51V16100BJ HY51V16100BSU

    hy5116100

    Abstract: No abstract text available
    Text: »HYUNDAI H Y 5 1 1 6 1 O O A S e r ie s 16M X 1 -bit CMOS DRAM DESCRIPTION The H Y 5 1 1 6 1 0 0 A isth e new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51161OOA HY5116100A HY51161 C1801 4b750Ã 1AD19-10-MAYÃ HY5116100AJ HY51161OOASLJ hy5116100

    T23N

    Abstract: au1017 4100 dram HYS14400 IPC 4104
    Text: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability


    OCR Scan     		PDF 4b750Ã DG0Q333 HY514400 HYS14400 M1A1200A-MAY91 -23-n FEA11 T23N au1017 4100 dram IPC 4104

    HYM536220

    Abstract: HY5118160 HYM536220W70
    Text: •HYUNDAI HYM536220 W-Series 2M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CM OS DRAM module consisting of four HY5118160 in 42/42 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling


    OCR Scan     		PDF HYM536220 36-bit HYM536220 HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG 1cd06-01-sep94 HYM536220W70

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I HY29F080 Series 1M x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements High performance - 55 ns access time Internal Programming Algorithms - Automatically programs and verifies data at a


    OCR Scan     		PDF HY29F080 G-70I, T-70I, R-70I G-70E, T-70E, R-70E G-90I, T-90I,

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI HY51V4810B Series 5 1 2 K x 8 -b tt CM O S DRAM w it h W r it e - P e r - B it PRELIMINARY DESCRIPTION The HY51V4810B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4810B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V4810B HY51V4810B 1AC20-00-MAY94 HY51V4810BJC HY51V4810BSUC HY51V4810BTC

    Untitled

    Abstract: No abstract text available
    Text: HY62256A Series •HYUNDAI 32K X 8-blt CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY62256A speed-55/70/85/100ns 1DC01-11-MAY94 HY62256AP HY62256ALP HY62256ALLP

    Untitled

    Abstract: No abstract text available
    Text: • H Y U N D A I H Y 5 1 V 4 8 0 0 B S e r ie s 5 1 2 K x 8 - b it C M O S D R A M PRELIMINARY DESCRIPTION The HY51V4800B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4800B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V4800B HY51V4800B 1AC18-00-MA HY51V4800BJC HY51V4800BSUC HY51V4800BTC HY51V4800BLTC

    Untitled

    Abstract: No abstract text available
    Text: "V Y U l i n A l m H Y 5 1 1 6 4 0 4 A S e r ie s i u n u i t l 4 M x 4 . b¡t C M 0S DRAM with Extended Data out DESCRIPTION The HY5116404A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5116404A utilizes H yundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116404A HY5116404A 1AD37-10-MAY95 HY5116404AJ HY5116404ASLJ HY5116404AT HY5116404ASLT HY5116404AR

    Untitled

    Abstract: No abstract text available
    Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands


    OCR Scan     		PDF HY29F200T/B HY29F200 16-Bit) G-70I, T-70I R-701 G-70E, T-70E, R-70E G-90I

    HY5118160JC70

    Abstract: HY5118160 hy5118160jc 4b75 D014G ms3417 hy5118160jc-70 KS-5 pc145 016B34
    Text: HY5118160 Series • • H Y U N D A I 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5118160 16-bit 16-bit. 0-629CB1 10-2g2) 016B3 000M750 HY5118160JC70 hy5118160jc 4b75 D014G ms3417 hy5118160jc-70 KS-5 pc145 016B34

    Untitled

    Abstract: No abstract text available
    Text: HY514100A Series »HYUNDAI 4M x 1 -bit CMOS DRAM DESCRIPTION The HY514100A is the 2nd generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514100A HY514100A 1AC06-30-MAY95 HY514100AJ HY514100ALJ HY514100AT HY514100ALT

    Untitled

    Abstract: No abstract text available
    Text: “ H Y U N D A I H Y 5 8 8 3 2 1 S e rie s _ 256Kx32bit Synchronous Graphics RAM PRELIMINARY Introduction Overview The eight megabit Synchronous Graphics RAM SGRAM is a single port, application specific memory device designed


    OCR Scan     		PDF 256Kx32bit b75Qfl DDD5370 1SC01-01-NOV96 HY588321 -01-NOV96

    Untitled

    Abstract: No abstract text available
    Text: ‘ H Y U N D A I H Y C F L F 1 6 0 0 4 S e r ie s _ 4MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16004 is the Flash memory card consisting of two 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Flash memory card is optimized tor the application of data and file storage in


    OCR Scan     		PDF x8/x16 HYCFLF16004 16Mbit 4b750flfl 1FC08-01-MAR96