A3 3308
Abstract: ST23L6410 Sitronix
Text: ST Sitronix ST23L6410 64-Mbit 8M x 8 / 4M x16 Mask ROM FEATURES GENERAL DESCRIPTION The ST23L6410 is a wide range operation, 64M-bit, Read Only Memory. It is organized as 8M x 8 bits (byte mode) or Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode)
|
Original
|
PDF
|
ST23L6410
64-Mbit
ST23L6410
64M-bit,
150ns
2002-Sep-13
48TSOP-I
A3 3308
Sitronix
|
AN1064
Abstract: CY62167E 1M x 16 SRAM
Text: CY62167E MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • The device is deselected (CE1 HIGH or CE2 LOW)
|
Original
|
PDF
|
CY62167E
16-Mbit
AN1064
1M x 16 SRAM
|
16202
Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
Text: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery
|
Original
|
PDF
|
1MX16/2MX8
HY23V16202
HY23V16202
42pin
100/120ns
44TSOP-II
16202
HY23V16202D
HY23V16202S
HY23V16202T
48TSOP
|
Z04B
Abstract: MR27V6441L MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03
Text: OKI Semiconductor MR27V6441L PEDR27V6441L-02-03 Issue Date: April 4, 2005 Preliminary 64M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V6441L is a 64 Mbit Production Programmed Read-Only Memory, which is configured as 67,108,864 word × 1-bit. The MR27V6441L supports a simple read operation using a single 3.3V power supply
|
Original
|
PDF
|
MR27V6441L
PEDR27V6441L-02-03
MR27V6441L
33MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
MR27V6441L-xxxMP
Z04D
48TSOP2
ST03
|
CY62157CV25
Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.
|
Original
|
PDF
|
CY62157DV30
I/O15)
45-ns
70-ns
CY62157CV25
CY62157CV30
CY62157CV33
CY62157DV30L
CY62157DV30LL
|
Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 38-05391 Spec Title: CY62158DV30 MoBL, 8-Mbit 1024K x 8 MoBL Static RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62158DV30 MoBL 8-Mbit (1024K x 8) MoBL® Static RAM This is ideal for providing More Battery Life (MoBL®) in
|
Original
|
PDF
|
CY62158DV30
1024K
CY62158DV30
CY62158DV
|
CY62167DV30L-55ZI
Abstract: CY62167DV30
Text: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed
|
Original
|
PDF
|
CY62167DV30
16-Mbit
I/O15)
CY62167DV30
48-lead
BV48A
BV48B
CY62167DV30L-55ZI
|
48-TSOPI
Abstract: No abstract text available
Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62158EV30 is a high-performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.
|
Original
|
PDF
|
CY62158EV30
1024K
CY62158DV30
48-ball
48-pin
48-TSOPI
|
Z04B
Abstract: MARK Z04D
Text: FEDR27T1641L-02-H1 ＯＫＩ Semiconductor MR27T1641L This version : Feb.28, 2005 Previous version: -.- 8M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27T1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as
|
Original
|
PDF
|
FEDR27T1641L-02-H1
MR27T1641L
MR27T1641L
30MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
|
usb flash drive circuit diagram sandisk
Abstract: research paper on wireless usb 3.0 vhdl code for ECC encryption SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FLASH TRANSLATION LAYER suyin camera SUYIN Connector usb USB, Card Reader Audio player circuit sandisk mmc 16MB Micron 32MB NOR FLASH
Text: SmartMedia White Paper Technology and Market Forecast January, 2000 For more information Young Ju KANG Email : JUDY@sec.samsung.com SmartMedia™ White Paper 2000 (c) Samsung Electronics Co.Ltd. I.
|
Original
|
PDF
|
15-micron
256Mb
512Mb
usb flash drive circuit diagram sandisk
research paper on wireless usb 3.0
vhdl code for ECC encryption
SAMSUNG NAND FLASH TRANSLATION LAYER FTL
SAMSUNG NAND FLASH TRANSLATION LAYER
suyin camera
SUYIN Connector usb
USB, Card Reader Audio player circuit
sandisk mmc 16MB
Micron 32MB NOR FLASH
|
CY62157CV25
Abstract: CY62157CV30 CY62157CV33 CY62157DV30 cy62157dv30l-55zxi
Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or
|
Original
|
PDF
|
CY62157DV30
I/O15)
CY62157CV25,
CY62157CV30,
CY62157C.
CY62157DV
CY62157DV30
CY62157CV25
CY62157CV30
CY62157CV33
cy62157dv30l-55zxi
|
Untitled
Abstract: No abstract text available
Text: CY62157DV MoBL PRELIMINARY 8 Mb 512K x 16 Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or
|
Original
|
PDF
|
CY62157DV
CY62157CV25,
CY62157CV30,
CY62157CV33
48-ball
48-pin
44-pin
|
48TSOPI
Abstract: No abstract text available
Text: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA
|
Original
|
PDF
|
CY62167E
16-Mbit
48-pin
I/O15)
48TSOPI
|
Untitled
Abstract: No abstract text available
Text: 4MX16/8MX8 BIT CMOS MASK ROM HY23V64200 Description The HY23V64200 high per formance read onl y m em or y i s or gani z ed ei th er a s 8,38 8,608 x 8bi t byte mode or as 4,194,304 x16 bit(word mode) and has an access time of 100/120ns. It needs no external
|
Original
|
PDF
|
4MX16/8MX8
HY23V64200
HY23V64200
100/120ns.
44SOP,
44TSOP-II
48TSOP-I
44TSOP-II
|
|
|
Untitled
Abstract: No abstract text available
Text: CY62177ESL MoBL 32-Mbit 2 M x 16/4 M × 8 Static RAM 32-Mbit (2 M × 16/4 M × 8) Static RAM Features Functional Description • Thin small outline package-I (TSOP-I) configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ High-speed up to 55 ns
|
Original
|
PDF
|
CY62177ESL
32-Mbit
I/O15)
|
CY62157CV25
Abstract: CY62157CV30 CY62157CV33 CY62157DV
Text: CY62157DV MoBL ADVANCE INFORMATION 8M 512K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are
|
Original
|
PDF
|
CY62157DV
I/O15)
CY62157CV25,
CY62157CV30,
CY62157CV33
CY62157DV
CY62157CV25
CY62157CV30
CY62157CV33
|
AN1064
Abstract: CY62167EV30 CY62167EV30LL
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 2.20V–3.60V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA
|
Original
|
PDF
|
CY62167EV30
16-Mbit
48-Ball
48-Pin
AN1064
CY62167EV30LL
|
Z04B
Abstract: MARK Z04D
Text: OKI Semiconductor MR27V1641L FEDR27V1641L-02-H1 Issue Date: April 21, 2006 16M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as 16,777,216 word × 1-bit. The MR27V1641L supports a simple read operation using a single 3.0V or 3.6V power
|
Original
|
PDF
|
MR27V1641L
FEDR27V1641L-02-H1
MR27V1641L
30MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
|
MS-24L244
Abstract: samsung u2 cable 3528 SMD Samsung LED smd diode U12 in4148 smd diode LCBHBT161M X4 DIODE SMD resistor 2012 2012 SMD resistor SMD resistor 334
Text: MODEL : S3C2400X 220Mhz No 1 2 3 4 5 Reference CN1 CN2 CON1 CON2 CON3 6 CON4 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 CON5, CON6 CON7 CON8 C1, C2, C3, C4, C5, C6, C7, C8, C17, C18, C19, C20, C21, C22, C23, C24, C25, C26, C37, C38,
|
Original
|
PDF
|
S3C2400X
220Mhz)
R-300H
CL-PD6710
144VQFP)
25Mhz
TPS2211
16SOP)
768Khz
12Mhz
MS-24L244
samsung u2 cable
3528 SMD Samsung LED
smd diode U12
in4148 smd diode
LCBHBT161M
X4 DIODE SMD
resistor 2012
2012 SMD resistor
SMD resistor 334
|
Untitled
Abstract: No abstract text available
Text: CY62167DV30 MoBL 16-Mbit 1 M x 16 Static RAM Features • Thin small outline package (TSOP-I) configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Wide voltage range: 2.2 V – 3.6 V ■ Ultra-low active power: Typical active current: 2 mA at f = 1 MHz ■
|
Original
|
PDF
|
CY62167DV30
16-Mbit
|
Untitled
Abstract: No abstract text available
Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.
|
Original
|
PDF
|
CY62157DV30
CY62157CV25,
CY62157CV30,
CY62157CV33
48-ball
48-pin
44-pin
512Kodified
45-ns
|
Untitled
Abstract: No abstract text available
Text: CY62158DV MoBL PRELIMINARY 8 Mb 1024K x 8 MoBL Static RAM This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into
|
Original
|
PDF
|
CY62158DV
1024K
55-ns
48-ball
48-pin
44-pin
|
CY62167EV30LL-45ZXI
Abstract: AN1064 CY62167EV30
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V
|
Original
|
PDF
|
CY62167EV30
16-Mbit
48-Ball
48-Pin
CY62167EV30LL-45ZXI
AN1064
|
lh5348
Abstract: lh5s4 48TSO
Text: ü fi LH53V4R00 LH53V4R00-2 • Description ■ Pin Connect for T h e L H 5 3 V 4 R 0 0 N /T , L H 5 3 V 4 R 0 0 N /T -2 U ser's N o . : L H 5V 4R X X is a CM OS 4 M -b it m ask-program m able ROM 32-pin SOP organized as 524 288 X 8 bits. It provides a high-speed access time o f 120/150 ns with low
|
OCR Scan
|
PDF
|
LH53V4R00
LH53V4R00-2
32-pin
LHS3V4R00-2
lh5348
lh5s4
48TSO
|