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    CY62167E Price and Stock

    Flip Electronics CY62167EV30LL-45BVI

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62167EV30LL-45BVI Tray 6,172 25
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    Flip Electronics CY62167EV18LL-55BVI

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62167EV18LL-55BVI Tray 4,136 50
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    Flip Electronics CY62167EV30LL-45BVIT

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62167EV30LL-45BVIT Reel 2,000 80
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    Infineon Technologies AG CY62167EV30LL-45BVXIT

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62167EV30LL-45BVXIT Reel 2,000 2,000
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    CY62167EV30LL-45BVXIT Cut Tape 400 1
    • 1 $13.73
    • 10 $12.706
    • 100 $10.8458
    • 1000 $9.61572
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    Avnet Americas CY62167EV30LL-45BVXIT 0 Weeks, 2 Days 100
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    • 100 $7.575
    • 1000 $6.666
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    Mouser Electronics CY62167EV30LL-45BVXIT 8,237
    • 1 $13.66
    • 10 $12.65
    • 100 $10.8
    • 1000 $9.57
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    Rochester Electronics CY62167EV30LL-45BVXIT 24,000 1
    • 1 $10.51
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    • 100 $9.88
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    Ameya Holding Limited CY62167EV30LL-45BVXIT 216
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    Rutronik CY62167EV30LL-45BVXIT Reel 2,000 2,000
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    Chip1Stop CY62167EV30LL-45BVXIT Cut Tape 1,977
    • 1 $10.9
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    • 100 $9.45
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    EBV Elektronik CY62167EV30LL-45BVXIT 15 Weeks 2,000
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    Win Source Electronics CY62167EV30LL-45BVXIT 8,000
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    • 100 $18.841
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    Infineon Technologies AG CY62167EV30LL-45BVXI

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62167EV30LL-45BVXI Tray 1,973 1
    • 1 $14.52
    • 10 $12.894
    • 100 $11.57713
    • 1000 $10.17975
    • 10000 $10.17975
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    Avnet Americas CY62167EV30LL-45BVXI Tray 0 Weeks, 2 Days 69
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    • 100 $10.585
    • 1000 $9.57
    • 10000 $8.99
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    Mouser Electronics CY62167EV30LL-45BVXI 2,132
    • 1 $14.82
    • 10 $13.16
    • 100 $11.18
    • 1000 $10.39
    • 10000 $10.39
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    Verical CY62167EV30LL-45BVXI 2,199 1
    • 1 $12.4426
    • 10 $11.2113
    • 100 $10.2859
    • 1000 $9.5766
    • 10000 $9.5766
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    CY62167EV30LL-45BVXI 2,183 1
    • 1 $11.809
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    CY62167EV30LL-45BVXI 278 1
    • 1 $11.227
    • 10 $10.116
    • 100 $9.281
    • 1000 $8.641
    • 10000 $8.641
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    CY62167EV30LL-45BVXI 100 3
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    Arrow Electronics CY62167EV30LL-45BVXI 2,183 8 Weeks 1
    • 1 $11.809
    • 10 $10.586
    • 100 $9.676
    • 1000 $9.15
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    CY62167EV30LL-45BVXI 278 8 Weeks 1
    • 1 $11.227
    • 10 $10.116
    • 100 $9.281
    • 1000 $8.641
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    Rutronik CY62167EV30LL-45BVXI Tray 4,800 4,800
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    • 10000 $12.07
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    Chip1Stop CY62167EV30LL-45BVXI 2,183
    • 1 $11.809
    • 10 $10.586
    • 100 $9.676
    • 1000 $9.15
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    CY62167EV30LL-45BVXI 278
    • 1 $11.227
    • 10 $10.116
    • 100 $9.281
    • 1000 $8.641
    • 10000 $8.641
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    CY62167EV30LL-45BVXI Tray 100
    • 1 $12.4
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    • 100 $12.4
    • 1000 $12.4
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    EBV Elektronik CY62167EV30LL-45BVXI 15 Weeks 4,800
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    Flip Electronics CY62167EV30LL-45BVXI 18,184
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    New Advantage Corporation CY62167EV30LL-45BVXI 74,400 1
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    CY62167E Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY62167E Cypress Semiconductor 16-Mbit (1M x 16 / 2M x 8) Static RAM Original PDF
    CY62167ELL-45ZXI Cypress Semiconductor 16-Mbit (1M x 16 / 2M x 8) Static RAM Original PDF
    CY62167ELL-45ZXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 45NS 48TSOP Original PDF
    CY62167ELL-45ZXIT Cypress Semiconductor 16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V; Original PDF
    CY62167ELL-45ZXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 45NS 48TSOP Original PDF
    CY62167ESL-55FNXIT Cypress Semiconductor MICROPOWER SRAMS Original PDF
    CY62167EV18 Cypress Semiconductor 16-Mbit (1M x 16) Static RAM Original PDF
    CY62167EV18LL-55BAXI Cypress Semiconductor 16-Mbit (1M x 16) Static RAM Original PDF
    CY62167EV18LL-55BAXI Cypress Semiconductor 16 Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 1.65 to 2.25 V; Original PDF
    CY62167EV18LL-55BVI Cypress Semiconductor 16 Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 1.65 to 2.25 V; Original PDF
    CY62167EV18LL-55BVI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48VFBGA Original PDF
    CY62167EV18LL-55BVIT Cypress Semiconductor 16 Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 1.65 to 2.25 V; Original PDF
    CY62167EV18LL-55BVIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48VFBGA Original PDF
    CY62167EV18LL-55BVXI Cypress Semiconductor 16-Mbit (1M x 16) Static RAM Original PDF
    CY62167EV18LL-55BVXI Cypress Semiconductor MoBL 16-Mbit (1M x 16) Static RAM Original PDF
    CY62167EV18LL-55BVXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48VFBGA Original PDF
    CY62167EV18LL-55BVXIT Cypress Semiconductor 16 Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 1.65 to 2.25 V; Original PDF
    CY62167EV18LL-55BVXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48VFBGA Original PDF
    CY62167EV30 Cypress Semiconductor 16-Mbit (1M x 16 / 2M x 8) Static RAM Original PDF
    CY62167EV30LL-45BVI Cypress Semiconductor 16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 2.20 to 3.60 V; Original PDF

    CY62167E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN1064

    Abstract: CY62167E 1M x 16 SRAM
    Text: CY62167E MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • The device is deselected (CE1 HIGH or CE2 LOW)


    Original
    PDF CY62167E 16-Mbit AN1064 1M x 16 SRAM

    55BV

    Abstract: AN1064 CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL
    Text: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is


    Original
    PDF CY62167EV18 16-Mbit 55BV AN1064 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL PRELIMINARY 16-Mb 1M x 16 Static RAM Features input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Deselected (CE1HIGH or CE2 LOW) • Wide voltage range: 1.65V – 2.25V • Outputs are disabled (OE HIGH)


    Original
    PDF CY62167EV18 16-Mb 48-ball

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: the


    Original
    PDF CY62167EV18 48-ball I/O15)

    48TSOPI

    Abstract: No abstract text available
    Text: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA


    Original
    PDF CY62167E 16-Mbit 48-pin I/O15) 48TSOPI

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C


    Original
    PDF CY62167EV30 16-Mbit 48-ball 48-pin

    AN1064

    Abstract: CY62167EV30 CY62167EV30LL
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 2.20V–3.60V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA


    Original
    PDF CY62167EV30 16-Mbit 48-Ball 48-Pin AN1064 CY62167EV30LL

    CY62167EV30LL-45ZXI

    Abstract: AN1064 CY62167EV30
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V


    Original
    PDF CY62167EV30 16-Mbit 48-Ball 48-Pin CY62167EV30LL-45ZXI AN1064

    IO14

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C


    Original
    PDF CY62167EV30 16-Mbit 48-ball 48-pin IO14

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM 16 Mbit (1M x 16) Static RAM Features automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original
    PDF CY62167EV18 48-ball

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL PRELIMINARY 16-Mb 1M x 16 / 2M x 8 Static RAM (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into


    Original
    PDF CY62167EV30 16-Mb 48-ball 48-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C


    Original
    PDF CY62167EV30 16-Mbit 48-rize

    Untitled

    Abstract: No abstract text available
    Text: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA


    Original
    PDF CY62167E 16-Mbit I/O15) 48-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C


    Original
    PDF CY62167EV30 16-Mbit 48-ball 48thorize

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features consumption by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance


    Original
    PDF CY62167EV18 16-Mbit 48-ball

    AN1064

    Abstract: CY62167EV30
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V


    Original
    PDF CY62167EV30 16-Mbit 48-Ball 48-Pin AN1064

    AN1064

    Abstract: CY62167E CY62167 48TSOP-I
    Text: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1M × 16 / 2M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA


    Original
    PDF CY62167E 16-Mbit I/O15) AN1064 CY62167 48TSOP-I

    AN1064

    Abstract: CY62167EV30 CY62167EV30LL
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM 16-Mbit (1M x 16 / 2M x 8) Static RAM Features • TSOP I package configurable as 1M x 16 or 2M x 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C


    Original
    PDF CY62167EV30 16-Mbit 48-Ball 48-Pin CY62167roducts AN1064 CY62167EV30LL

    CY62167EV30LL-45ZXI

    Abstract: cy62167ev30LL 48 ball VFBGA AN1064 CY62167EV30 2026-00
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V


    Original
    PDF CY62167EV30 16-Mbit 48-Ball 48-Pin CY62167EV30LL-45ZXI cy62167ev30LL 48 ball VFBGA AN1064 2026-00

    Untitled

    Abstract: No abstract text available
    Text: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA


    Original
    PDF CY62167E 16-Mbit 48-pin I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM 16 Mbit (1M x 16) Static RAM Features automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original
    PDF CY62167EV18 48-ball

    AN1064

    Abstract: CY62167E
    Text: CY62167E MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • The device is deselected (CE1 HIGH or CE2 LOW)


    Original
    PDF CY62167E 16-Mbit AN1064

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM 168) Static RAM Features • TSOP I package configurable as 1M x 16 or 2M x 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C


    Original
    PDF CY62167EV30 16-Mbit 48-Ball 48-Pin

    Untitled

    Abstract: No abstract text available
    Text: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA


    Original
    PDF CY62167E 16-Mbit I/O15)