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    CY62157DV Search Results

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    CY62157DV Price and Stock

    Rochester Electronics LLC CY62157DV30LL-55BVXA

    IC SRAM 8MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157DV30LL-55BVXA Tray 9,190 37
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    Rochester Electronics LLC CY62157DV30LL-70BVI

    IC SRAM 8MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157DV30LL-70BVI Bulk 4,687 62
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    Rochester Electronics LLC CY62157DV20L-70BVXI

    SRAM CHIP ASYNC SINGLE 1.8V 8M B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157DV20L-70BVXI Bulk 1,931 85
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    Rochester Electronics LLC CY62157DV20L-55BVI

    IC SRAM 8MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157DV20L-55BVI Bulk 1,889 70
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    • 100 $4.34
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    Rochester Electronics LLC CY62157DV30LL-70BVXI

    IC SRAM 8MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157DV30LL-70BVXI Bulk 1,843 43
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    • 100 $7.07
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    CY62157DV Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62157DV18 Cypress Semiconductor Packages offered in a 48-ball FBGA Original PDF
    CY62157DV18L-55BVI Cypress Semiconductor 512K x 16 Static RAM Original PDF
    CY62157DV18L-55BVI Cypress Semiconductor Packages offered in a 48-ball FBGA Original PDF
    CY62157DV18L-70BVI Cypress Semiconductor Packages offered in a 48-ball FBGA Original PDF
    CY62157DV18L-70BVI Cypress Semiconductor 512K x 16 Static RAM Original PDF
    CY62157DV18LL-55BVI Cypress Semiconductor 512K x 16 Static RAM Original PDF
    CY62157DV18LL-55BVI Cypress Semiconductor Packages offered in a 48-ball FBGA Original PDF
    CY62157DV18LL-70BVI Cypress Semiconductor 512K x 16 Static RAM Original PDF
    CY62157DV18LL-70BVI Cypress Semiconductor Packages offered in a 48-ball FBGA Original PDF
    CY62157DV20 Cypress Semiconductor 512K x 16 Static RAM Original PDF
    CY62157DV20L-55BVI Cypress Semiconductor 8M (512K x 16) Static RAM Original PDF
    CY62157DV20L-70BVI Cypress Semiconductor 8M (512K x 16) Static RAM Original PDF
    CY62157DV20LL-55BVI Cypress Semiconductor 8M (512K x 16) Static RAM Original PDF
    CY62157DV30 Cypress Semiconductor 8-Mbit (512K x 16) MoBL(R) Static RAM Original PDF
    CY62157DV30L Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-45BVI Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-45ZSXI Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-45ZXI Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-55BVE Cypress Semiconductor 8-Mbit (512K x 16) MoBL(R) Static RAM Original PDF
    CY62157DV30L-55BVI Cypress Semiconductor Original PDF

    CY62157DV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


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    PDF CY62157EV18 CY62157DV18 CY62157DV20 48-ball

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.


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    PDF CY62157DV30 I/O15) 45-ns 70-ns CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30L CY62157DV30LL

    CY62157CV18

    Abstract: CY62157DV20
    Text: PRELIMINARY CY62157DV20 MoBL2 512K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed


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    PDF CY62157DV20 I/O15) 55-ns 70-ns CY62157CV18 CY62157CV18

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 cy62157dv30l-55zxi
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or


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    PDF CY62157DV30 I/O15) CY62157CV25, CY62157CV30, CY62157C. CY62157DV CY62157DV30 CY62157CV25 CY62157CV30 CY62157CV33 cy62157dv30l-55zxi

    Untitled

    Abstract: No abstract text available
    Text: CY62157DV MoBL PRELIMINARY 8 Mb 512K x 16 Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or


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    PDF CY62157DV CY62157CV25, CY62157CV30, CY62157CV33 48-ball 48-pin 44-pin

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV
    Text: CY62157DV MoBL ADVANCE INFORMATION 8M 512K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are


    Original
    PDF CY62157DV I/O15) CY62157CV25, CY62157CV30, CY62157CV33 CY62157DV CY62157CV25 CY62157CV30 CY62157CV33

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original
    PDF CY62157EV18 CY62157DV18 CY62157DV20 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.


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    PDF CY62157DV30 CY62157CV25, CY62157CV30, CY62157CV33 48-ball 48-pin 44-pin 512Kodified 45-ns

    Untitled

    Abstract: No abstract text available
    Text: CY62157DV30 MoBL  8-Mbit 512K x 16 MoBL Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into


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    PDF CY62157DV30 CY62157CV25, CY62157CV30, CY62157CV33 48-ball 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


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    PDF CY62157EV18 CY62157DV18 CY62157DV20 I/O15)

    CY62157DV18LL-55

    Abstract: CY62157DV18LL-70BVI
    Text: PRELIMINARY CY62157DV18 MoBL2 512K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed


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    PDF CY62157DV18 I/O15) 55-ns 70-ns CY62157CV18 CY62157DV18LL-55 CY62157DV18LL-70BVI

    CY62157CV18

    Abstract: CY62157DV20 CY62157DV20L-55BVI ultra fine pitch BGA BV48A
    Text: CY62157DV20 MoBL2 8M 512K x 16 Static RAM Features • • • • • • • • • Very high speed: 55 ns Wide voltage range: 1.65V to 2.2V Pin compatible with CY62157CV18 Ultra low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 10 mA @ f = fmax


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    PDF CY62157DV20 CY62157CV18 48-ball CY62157DV20 CY62157CV18 CY62157DV20L-55BVI ultra fine pitch BGA BV48A

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original
    PDF CY62157EV18 CY62157DV18 CY62157DV20 I/O15)

    AN1064

    Abstract: CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30LL
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or


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    PDF CY62157DV30 I/O15) 48-Pin 45-ns 70-ns AN1064 CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30LL

    CY62157EV30 MoBL

    Abstract: CY62157EV30LL-45ZSXI CY62157 AN1064 CY62157DV30 CY62157EV30 CY62157EV30LL DSA0025657
    Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62157DV30 • Ultra low standby power — Typical Standby current: 2 µA


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    PDF CY62157EV30 CY62157DV30 48-ball 44-pin 48-pin CY62157EV30 MoBL CY62157EV30LL-45ZSXI CY62157 AN1064 CY62157DV30 CY62157EV30LL DSA0025657

    CY62157DV18L-55BVI

    Abstract: CY62157DV18
    Text: ADVANCE INFORMATION CY62157DV18 512K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed


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    PDF CY62157DV18 I/O15) CY62157DV18: CY62157CV18s CY62157DV18 CY62157CV18 CY62157DV18L-55BVI

    CY62157DV30LL

    Abstract: CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Functional Description[1] Features • Temperature Ranges — Industrial: –40°C to 85°C The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features


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    PDF CY62157DV30 CY62157DV30 I/O15) C3115 CY62157DV 45-ns 70-ns CY62157DV30LL CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30L

    CY62157

    Abstract: CY62157DV30LL-45ZSXI CY62157DV30LL-45BVI
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features •Temperature Ranges — Industrial: –40°C to 85°C The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features


    Original
    PDF CY62157DV30 CY62157CV25, CY62157CV30, CY62157CV33 48-ball 48-pin 44-pin CY62157DV CY62157 CY62157DV30LL-45ZSXI CY62157DV30LL-45BVI

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.


    Original
    PDF CY62157DV30 I/O15) 45-ns 70-ns CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30L CY62157DV30LL

    CY62157DV18

    Abstract: CY62157DV20 CY62157EV18
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original
    PDF CY62157EV18 CY62157DV18 CY62157DV20 I/O15) CY62157DV20

    CY62157CV18

    Abstract: CY62157DV20 CY62157DV20L-55BVI ultra fine pitch BGA
    Text: CY62157DV20 MoBL2 8M 512K x 16 Static RAM Features • • • • • • • • • Very high speed: 55 ns Wide voltage range: 1.65V to 2.2V Pin compatible with CY62157CV18 Ultra low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 10 mA @ f = fmax


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    PDF CY62157DV20 CY62157CV18 48-ball CY62157DV20 CY62157CV18 CY62157DV20L-55BVI ultra fine pitch BGA

    CY62157DV18LL-55BVI

    Abstract: CY62157CV18 CY62157DV18 CY62157DV18L-55BVI CY62157DV18LL
    Text: CY62157DV18 MoBL2 8M 512K x 16 Static RAM Features • • • • • • • • • power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW or both BHE and BLE are HIGH. The input/output pins (I/O0 through


    Original
    PDF CY62157DV18 I/O15) CY62157CV18 CY62157DV18 CY62157DV18LL-55BVI CY62157CV18 CY62157DV18L-55BVI CY62157DV18LL

    CY62157DV18LL

    Abstract: CY62157CV18 CY62157DV18 CY62157DV18L-55BVI
    Text: CY62157DV18 MoBL2 8M 512K x 16 Static RAM Features • • • • • • • • • power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW or both BHE and BLE are HIGH. The input/output pins (I/O0 through


    Original
    PDF CY62157DV18 I/O15) CY62157CV18 CY62157DV18 CY62157DV18LL CY62157CV18 CY62157DV18L-55BVI

    Untitled

    Abstract: No abstract text available
    Text: CY62157DV MoBL PRELIMINARY 8 Mb 512K x 16 Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original
    PDF CY62157DV CY62157CV25, CY62157CV30, CY62157CV33 48-ball 48-pin 44-pin