bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
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KM44C4100AT
Abstract: No abstract text available
Text: 44C41OOA/AL/ALL/ASL CMOS DRAM 4 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C K M 44C 4100A /A L/A LL/A S L-5 50ns 13ns 90ns KM 44C 4100A/ALVALL/ASL-6 60ns 15ns 110ns KM 44C41 O OA/AL/ALL/ASL-7
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KM44C41OOA/AL/ALL/ASL
44C41OOA/AL/ALL/ASL
KM44C41
24-LEAD
400MIL)
400MIL,
KM44C4100AT
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Untitled
Abstract: No abstract text available
Text: KM44C4000C, 44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consum ption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this fam ily have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
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KM44C4000C,
KM44C4100C
KM44V4000C,
KM44V4100C
4V4000C,
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Untitled
Abstract: No abstract text available
Text: 44C4100 CMOS DRAM 4M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 4 1 00 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C4100
24-LEAD
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Untitled
Abstract: No abstract text available
Text: KMM372C412AK/A S DRAM MODULE KMM372C412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372C412A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C412A - 5
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KMM372C412AK/A
KMM372C412AK/AS
4Mx72
372C412A
KMM372C412A
300mil
110ns
130ns
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4Mx8 dram simm
Abstract: No abstract text available
Text: DRAM MODULE 4 Mega Byte KMM5841OOAKN Fast Page Mode 4Mx8 DRAM SIMM , 2K Refresh ,5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Sam sung KMM5841 OOAKN is a 4M bit x 8 I P r e lim in â r y FEATURES • Performance Range: Dynam ic RAM high density m em ory module. The
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KMM5841OOAKN
KMM5841
24-pin
44C4100AK
4Mx8 dram simm
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Untitled
Abstract: No abstract text available
Text: KM44C4003A, 44C4103A CMOS DRAM 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode Quad C 5 5 DRAMs. Fast Page Mode offers high speed random access of memory cells within the. same row. Refresh cycle 2K Ref. or 4K Ref. , access
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KM44C4003A,
KM44C4103A
C55-before-ES5
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A60e
Abstract: AA010
Text: DRAM MODULE 16 Mega Byte KMM54041OOAK/AKG Fast Page Mode 4Mx40 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5404100AK is a 4M bit X 40 Dynamic RAM high density memory module The
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KMM54041OOAK/AKG
4Mx40
KMM5404100AK
24-pin
72-pin
A60e
AA010
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 4 Mega Byte KMM5941OOAKN Fast Page Mode Preliminary 4M x9 DRAM SIM M , 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION T h e S a m s u n g K M M 5 94 1 OOAKN is a 4 M bit x 9 FEATURES • P e rfo rm an ce R ange: D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . T h e
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KMM5941OOAKN
44C4100AK
41C4000CJ
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KM44C4100AK
Abstract: No abstract text available
Text: |M /D M « ? ]} DRAM MODULE 32 Mega Byte KMM53361OOAKV/AKVG Fast Page Mode 8Mx33 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES • Performance Range1 The Samsung KMM533B100AKV is a 8M bit x 33 Dynamic RAM high density memory module The
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KMM53361OOAKV/AKVG
8Mx33
KMM533B100AKV
KMM5338100AKV
24-pin
20-pin
72-pin
53381DOAKV
KMM53301OOAKV-5
KM44C4100AK
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Untitled
Abstract: No abstract text available
Text: 44C4110 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung 44C4110 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C4110
KM44C4110
24-LEAD
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Untitled
Abstract: No abstract text available
Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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16Mx4,
512Kx8)
KM44C4104BK
7Tb4142
0G34bb2
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 32 Mega Byte KMM5368103AK/AKG Fast Page Mode 8Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5368103AK is a 8M bit x 36 Dynamic RAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung
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KMM5368103AK/AKG
8Mx36
KMM5368103AK
24-pm
20-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte KMM53641OOAKH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM53641 OOAKH is a 4M bit x 36 Dynamic RAM high density memory module The Samsung KMM53641 OOAKH consists of nine CMOS
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KMM53641OOAKH
4Mx36
KMM53641
24-pin
72-pin
KMM5364100AKH
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km44c4104
Abstract: GZ22
Text: 44C4104A/AL/ALL/ASL CMOS DRAM 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC tHPC 20ns 44C4104A/ALVALL/ASL-5 50ns 13ns 90ns 44C4104A/ALVALL/ASL-6 60ns 15ns 110ns 24ns 44C4104A/AL/ALL/ASL-7
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KM44C4104A/AL/ALL/ASL
KM44C4104A/ALVALL/ASL-5
KM44C4104A/ALVALL/ASL-6
KM44C4104A/AL/ALL/ASL-7
KM44C4104A/AL/ALL/ASL-8
110ns
130ns
150ns
24-LEAD
400MIL,
km44c4104
GZ22
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41C16100
Abstract: 24-PIN 41C16000
Text: MEMORY ICs D yn am ic R A M Capacity Continued Part Number 16M i FUNCTION GUIDE Organization Speed(ns) Features Technology Packages Remark * KM418V256ALLT 256K X 1B 70/80 CMOS Fast Page(3.3V) 40 Pin TSOP-ll(Forward) Now * KM418V256ALLTR 256K X 18 70/80 CMOS
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KM418V256ALLT
KM418V256ALLTR
KM416C157AJ
KM416C157AZ
KM416C157AT
KM416C157ATR
416C157ALZ
KM416C157ALT
KM416C157ALTR
KM416C157ALLZ
41C16100
24-PIN
41C16000
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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TCA 875
Abstract: 44C4100 KM44C4100-6
Text: 44C4100 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KM 44C 4100 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C4100
44C4100
24-LEAD
TCA 875
KM44C4100-6
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KM44C4100BS
Abstract: BC3 csr data sheet tsop 138 TSOP 173 g KM44C4100B N300N 3bm42 512Kx8 bit
Text: 44C4100BS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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KM44C4100BS
34STB
KM44C4100BS
BC3 csr
data sheet tsop 138
TSOP 173 g
KM44C4100B
N300N
3bm42
512Kx8 bit
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Untitled
Abstract: No abstract text available
Text: K M 4 4 C 4 1 03 BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time
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KM44C4103BS
034b40
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km44c4104b
Abstract: No abstract text available
Text: KM44C4004B, 44C4104B KM44V4004B, KM44V4104B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily o f 4 ,1 9 4 ,3 0 4 x 4 bit E x te n d e d D a ta O u t C M O S D R A M s. E x te n d e d D a ta O u t M o d e o ffe rs
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KM44C4004B,
KM44C4104B
KM44V4004B,
KM44V4104B
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1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
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Ez102
Abstract: 4103AJ
Text: KMM372V412AK/AS DRAM MODULE KMM372V412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KMM372V412A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C412A - 6
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KMM372V412AK/AS
KMM372V412AK/AS
4Mx72
KMM372V412A
300mil
400mil
48pin
168-pin
M372V412A
Ez102
4103AJ
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KM44C4100ak
Abstract: KMM5364103AK
Text: DRAM MODULE KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM - 16 Mega Byte 7 GENERAL DESCRIPTION FEATURES The Samsung KMM5364103AK is a 8M bit x 36 Dynamic RAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung
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KMM5364103AK/AKG
4Mx36
KMM5364103AK
24-pin
28-pin
72-pin
110ns
130ns
KM44C4100ak
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