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    KMM53641 Price and Stock

    Samsung Semiconductor KMM5364100A-7

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    Samsung Semiconductor KMM5364103BK-6U

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    Samsung Semiconductor KMM5364100-7

    MEMORY MODULE,DRAM,FAST PAGE,4MX36,CMOS,SSIM,72PIN,PLASTIC
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    Quest Components KMM5364100-7 1
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    KMM53641 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM5364103CK-5 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V Original PDF
    KMM5364103CK-6 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V Original PDF
    KMM5364103CKG Samsung Electronics 4m x 36 Dram Simm Using 4Mx4 and 16m Quad Cas 4k/2k Refresh 5V Original PDF
    KMM5364103CKG-5 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V Original PDF
    KMM5364103CKG-6 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V Original PDF
    KMM5364105CK-5 Samsung Electronics DRAM MODULE EDO 2KBYTE 5V 72SIMM Original PDF
    KMM5364105CK-6 Samsung Electronics Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K, Refresh, 5V Original PDF
    KMM5364105CKG-5 Samsung Electronics Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K, Refresh, 5V Original PDF
    KMM5364105CKG-6 Samsung Electronics Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K, Refresh, 5V Original PDF

    KMM53641 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KMM5364003CK

    Abstract: KMM5364003CKG KMM5364103CK KMM5364103CKG
    Text: KMM5364003CK/CKG KMM5364103CK/CKG DRAM MODULE 4Byte 4Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5364003CK/CKG KMM5364103CK/CKG Revision History Version 0.1 (Nov. 1997) • Changed the mode of parity check component from EDO to FP, refer to


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    KMM5364003CK/CKG KMM5364103CK/CKG 4Mx36 KMM5364103CK/CKG KMM53640 KMM5364003CK KMM5364003CKG KMM5364103CK KMM5364103CKG PDF

    KMM5364005CK

    Abstract: KMM5364005CKG KMM5364105CK KMM5364105CKG
    Text: KMM5364005CK/CKG KMM5364105CK/CKG DRAM MODULE KMM5364005CK/CKG & KMM5364105CK/CKG Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53640 1 05CK is a 4Mx36bits Dynamic


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    KMM5364005CK/CKG KMM5364105CK/CKG KMM5364105CK/CKG KMM53640 4Mx36bits 24-pin 28-pin 72-pin KMM5364005CK KMM5364005CKG KMM5364105CK KMM5364105CKG PDF

    HYM536410AM70

    Abstract: KMM5364103AK-6 KMM53632000AKA-60 KMM53632000AK-6U KMM5364103AK-70 KMM53632000AK6 KMM5362003C-60 4MX36 KMM53616000AK 16MX36
    Text: Page 1 12/09/97 AP450GX MP Server System 12/9/97 The following tables list SIMM/DIMM devices known to be compatible with the specified Intel platforms. In general, SIMM devices, which are faster than those specified for a given platform, will work although no extra performance will be realized. The memory devices


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    AP450GX HYM536410AM70 KMM5364103AK-6 KMM53632000AKA-60 KMM53632000AK-6U KMM5364103AK-70 KMM53632000AK6 KMM5362003C-60 4MX36 KMM53616000AK 16MX36 PDF

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    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h?E D • 7 ^ 4 1 4 2 D 0 1 5 2 7 M 37=5 ■ SI'IGK KMM5364100H/HG DRAM MODULES 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM5364100H-6 tR A C tc A c Irc 60ns 15ns 110ns KMM5364100H-7 70ns 20ns


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    KMM5364100H/HG KMM5364100H-6 KMM5364100H 24-pin 72-pin 22/xF 110ns KMM5364100H-7 130ns PDF

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    Abstract: No abstract text available
    Text: KMM5364003CK/CKG KMM5364103CK/CKG DRAM MODULE KMM5364003CK/CKG & KMM5364103CK/CKG with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 53640 1 03 C K is a 4 M x3 6 b its RAM


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    KMM5364003CK/CKG KMM5364103CK/CKG KMM5364003CK/CKG KMM5364103CK/CKG PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5364103AK is a 8M bit x 36 Dynamic RAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung


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    KMM5364103AK/AKG 4Mx36 KMM5364103AK 24-pin 20-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5364003BK/BKG DRAM KMM5364103BK/BKG KMM5364003BK/BKG & KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS DRAM with 300mil PKG G EN ER AL DESC RIPTIO N The Samsung KMM53640 1 03BK is a 4M bit x 36


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    KMM5364003BK/BKG KMM5364103BK/BKG KMM5364103AK/AKG 4Mx36 300mil KMM53640 24-pin 28-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM53641OOAH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN ERA L DES C R IPTIO N FEATURES The Samsung KMM5364100AH is a 4M bit x 36 Dynamic HAM high density memory module. The Samsung KMM5364100AH consists of nine CMOS


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    KMM53641OOAH 4Mx36 KMM5364100AH 24-pin 72-pin PDF

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    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM53641OOAKH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM53641 OOAKH is a 4M bit x 36 Dynamic RAM high density memory module The Samsung KMM53641 OOAKH consists of nine CMOS


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    KMM53641OOAKH 4Mx36 KMM53641 24-pin 72-pin KMM5364100AKH PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364100A/AG Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN ERA L D ESC RIPTIO N FEATURES • Performance Range' The Sam sung K M M 5364100A is a 4M bit x 36 D ynam ic RAM high density m em ory module. The


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    KMM5364100A/AG 4Mx36 364100A 24-pin 20-pin 72-pin KMM5364100A PDF

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    Abstract: No abstract text available
    Text: DRAM MODULES KMM5364100H/HG 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tcAC tRC 15ns 110ns KMM5364100H-7 70ns 20ns 130ns KMM5364100H-8 80ns 20ns 150ns The KMM5364100H is a S ingle In-line M em ory M odule w ith edge connections and is intended fo r m ounting into


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    KMM5364100H/HG KMM5364100H-6 KMM5364100H-7 KMM5364100H-8 110ns 130ns 150ns KMM5364100H PDF

    bas 33 equivalent

    Abstract: km44c4105bk EZ 720 kmm5364105bk
    Text: KMM5364005BK/BKG KMM5364105BK/BKG DRAM MODULE KMM5364005BK/BKG & KMM5364105BK/BKG Fast Page with EDO Mode 4Mx36 DRAM SIMM, 4K & 2K Refresh, using 16M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KM M 53640 1 05BK is a 4M bit x 36


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    KMM5364005BK/BKG KMM5364105BK/BKG KMM5364005BK/BKG KMM5364105BK/BKG 4Mx36 KMM53640 24-pin 28-pin 72-pin bas 33 equivalent km44c4105bk EZ 720 kmm5364105bk PDF

    KMM5364100-7

    Abstract: Ras 1220
    Text: DRAM MODULES KMM5364100/G 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5364100 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100 consist of eight CMOS 4M x 4 bit DRAMs in 24-pin SOJ packages and four CMOS 4 M x 1 bit


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    KMM5364100/G KMM5364100 24-pin 20-pin 72-pin KMM5364100-6 KMM5364100-7 KMM5354100-8 Ras 1220 PDF

    KM41C4000CJ

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364100A1 /A1G Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DES C R IPTIO N FEATURES The Samsung KMM5364100A1 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100A1 consists of eight CMOS


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    KMM5364100A1 4Mx36 24-pin 20-pin 72-pin KM41C4000CJ PDF

    A1KA

    Abstract: KMM5364103BK
    Text: KMM5364003BK/BKG KMM5364103BK/BKG DRAM MODULE KMM5364003BK/BKG & KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS DRAM with 300mil PKG GENERAL DESCRIPTION FEATURES The Sam sung K M M 53640 1 03BK is a 4M bit x 36 • Part Identification


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    KMM5364003BK/BKG KMM5364103BK/BKG KMM5364003BK/BKG KMM5364103AK/AKG 4Mx36 300mil 24-pin 28-pin 72-pin KMM53640 A1KA KMM5364103BK PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM53641OOAKH Fast Page Mode Preliminary 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM53641 OOAKH is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM53641 OOAKH consists of nine CMOS


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    KMM53641OOAKH 4Mx36 KMM53641 24-pin 72-pin KMM5364100AKH PDF

    KM44C4100AJ

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364100A1/A1G Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Sam sung KMM5364100A1 is a 4M bit x 36 • Performance Range: D ynam ic RAM high density m em ory module. The


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    KMM5364100A1/A1G 4Mx36 KMM5364100A1 24-pin 20-pin KM44C4100AJ PDF

    EZ 720

    Abstract: No abstract text available
    Text: KMM5364005CK/CKG KMM5364105CK/CKG DRAM MODULE KMM5364005CK/CKG & KMM5364105CK/CKG Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53640 1 05CK is a 4Mx36bits Dynamic


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    KMM5364005CK/CKG KMM5364105CK/CKG KMM5364005CK/CKG KMM5364105CK/CKG KMM53640 4Mx36bits 24-pin 28-pin 72-pin EZ 720 PDF

    KMM5364100A-7

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM53641OOA/AG Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5364100A is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100A consists of eight CMOS


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    KMM53641OOA/AG 4Mx36 KMM5364100A 24-pin 20-pin 72-pin KMM5364100A-6 KMM5364100A-7 PDF

    KM44C4100ak

    Abstract: KMM5364103AK
    Text: DRAM MODULE KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM - 16 Mega Byte 7 GENERAL DESCRIPTION FEATURES The Samsung KMM5364103AK is a 8M bit x 36 Dynamic RAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung


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    KMM5364103AK/AKG 4Mx36 KMM5364103AK 24-pin 28-pin 72-pin 110ns 130ns KM44C4100ak PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E J> m 7 ^ 4 1 4 2 QGlS2ba 07S KMM5364100/G DRAM MODULES 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: I rac tcAC I rc 60ns 15ns 110ns KMM5364100-7 70ns 20ns 130ns KMM5354100-8 80ns 20ns 150ns


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    KMM5364100/G 110ns KMM5364100-7 130ns KMM5354100-8 150ns KMM5364100-6 KMM5364100 cycies/32ms G01S273 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM53641OOAH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5364100AH is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100AH consists of nine CMOS


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    KMM53641OOAH 4Mx36 KMM5364100AH 24-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM53641OOAK/AKG Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package G EN ERA L DES C R IPTIO N FEATURES The Samsung KMM5364100AK is a 4M bit x 36 Dynamic RAM high density memory module. The • Performance Range:


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    KMM53641OOAK/AKG 4Mx36 KMM5364100AK 24-pin 20-pin 72-pin KMM5364100AK-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: b4E D S A M S UN G E L E C T R O N I C S INC • 7^4142 ü o m aia 3QQ ■ S f 1 6 K DRAM MODULES KMM5404000/G 4MK40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAC ÍRC 60ns 15ns 110ns KMM5404000-7 70ns 20ns 130ns KMM5404000-8


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    KMM5404000/G 4MK40 110ns KMM5404000-7 130ns KMM5404000-8 150ns KMM5404000-6 KMM5404000 PDF