4435 mosfet
Abstract: Mi 4435 MOSFET 4435 APM4435 4435 so8 4435D 4435 B Mos-Fet apm4435 4435 marking 4435
Text: APM4435 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON = 16mΩ(typ.) @ VGS = -10V S 1 8 D Super High Density Cell Design S 2 7 D Reliable and Rugged S 3 6 D SO-8 Package G 4 5 D RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • •
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APM4435
-30V/-8A,
4435 mosfet
Mi 4435
MOSFET 4435
APM4435
4435 so8
4435D
4435 B
Mos-Fet apm4435
4435
marking 4435
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4435 mosfet
Abstract: Mi 4435 MOSFET 4435 4435 MARKING CODE 4435 marking 4435 APM4435K STD-020C 4435 m
Text: APM4435K P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-8A , D RDS ON =16mΩ(typ.) @ VGS=-10V RDS(ON)=24mΩ(typ.) @ VGS=-4.5V • • • Reliable and Rugged • Lead Free Available (RoHS Compliant) D D D S Super High Dense Cell Design
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APM4435K
-30V/-8A
4435 mosfet
Mi 4435
MOSFET 4435
4435
MARKING CODE 4435
marking 4435
APM4435K
STD-020C
4435 m
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4435 mosfet
Abstract: No abstract text available
Text: MOSFET SMD Type P-Channel MOSFET SI4435DY SOP-8 • Features ● VDS=-30V ● RDS on =0.02Ω@VGS=-10V ● RDS(on)=0.035Ω@VGS=-4.5V S G S 1 8 D S 2 7 D S 3 6 D G 4 5 D D Top View ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage
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SI4435DY
00A/us
4435 mosfet
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4435 mosfet
Abstract: APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310
Text: www.anpec.com.tw ANPEC MOSFET Product Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • Anpec 技術發展 • Anpec MOSFET • 新產品開發方向 2 Anpec MOSFET技術發展 MOSFET技術發展
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APM70N03
APM3005/7/9N
APM2509/6/4N
MO-23/25/26/89,
SC-70
0V/20V,
30mohm
/55mohm~
APM2300A/2322/2324,
APM2310/2320/2306,
4435 mosfet
APM2014
4410 mosfet
MOSFET 4420
4435* mos
4435 sc
MOSFET 4435
9935 mosfet
ANPEC
APM2310
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NTC 50-11
Abstract: smd 3258 SMD 4435 4435 smd 1 307 329 082 thermistor NTC 50-11 4150K smd 1608 3670K K 3264
Text: NTC Thermistor SMD DESCRIPTION The LNS series is manganese oxide based NTC thermistor, which shows non-linear resistance-temperature behavior. Multilayered structure has as high reliability as monoblock type, even without protective glass coating, since the active electrode
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280oC
NTC 50-11
smd 3258
SMD 4435
4435 smd
1 307 329 082
thermistor NTC 50-11
4150K
smd 1608
3670K
K 3264
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motorola 68hc705 programming guide
Abstract: 68HC12 microcontroller electronic stethoscope circuit diagram HMI-200 Telefunken supertap emulator 68302 installation guide M68HC11-F mc68hc11evb tag 8944 semiconductors cross index
Text: 1999 MOTOROLA MICROCONTROLLER DEVELOPMENT TOOLS DIRECTORY Design Support for the M68HCO5, M68HCO8, M68HC11, M68HC12, M68HC16, M68300, and MPC500 Families 1999 Edition 1999 Motorola, Inc All Rights Reserved Table of Contents MOTOROLA Table of Contents Development Tools Index by
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M68HCO5,
M68HCO8,
M68HC11,
M68HC12,
M68HC16,
M68300,
MPC500
M68HC11
M68HC05
motorola 68hc705 programming guide
68HC12 microcontroller
electronic stethoscope circuit diagram
HMI-200
Telefunken
supertap emulator 68302 installation guide
M68HC11-F
mc68hc11evb
tag 8944
semiconductors cross index
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Untitled
Abstract: No abstract text available
Text: APT10045JFLL 1000V 21A 0.450W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package
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APT10045JFLL
OT-227
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SIEMENS SIMATIC NET PROFIBUS FC 6XV1 830-0EH10
Abstract: Siemens S7 400 4211BL01-0AA0 6ES7 414-2XK05-0AB0 414-3XM05-0AB0 6ES7 960-1AA04-5AA0 6es7 422 X204-2 421-1BL01-0AA0 siemens siplus
Text: 6 Siemens AG 2013 SIMATIC S7-400 6/2 Introduction 6/4 6/4 6/4 6/8 6/13 6/18 6/21 6/21 6/22 6/23 6/25 6/26 6/26 6/30 6/35 6/35 6/35 6/35 6/35 6/41 6/55 Central processing units Standard CPUs CPU 412 CPU 414 CPU 416 CPU 417 SIPLUS Standard CPUs SIPLUS CPU 412
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S7-400
S7-400H
IF-964
S7-400F/FH
SIEMENS SIMATIC NET PROFIBUS FC 6XV1 830-0EH10
Siemens S7 400
4211BL01-0AA0
6ES7 414-2XK05-0AB0
414-3XM05-0AB0
6ES7 960-1AA04-5AA0
6es7 422
X204-2
421-1BL01-0AA0
siemens siplus
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4435 m
Abstract: USB Expands
Text: Universal Serial Bus New products. New customers. And new methods of marketing. Explore a whole new world of opportunities with USB Anything. Anytime. Anyone. Market-building with USB: overcoming the barriers Adding new peripherals to their desktop PC is a frightening experience for many users. The very thought of configuring add-in cards with dip switches, jumper cables, software drivers,
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USA/0696/10K/ASI/LB
4435 m
USB Expands
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ablebond epoxy
Abstract: NKD-100-D 84-1LMI
Text: NKD-100-D 0,//,0 7(5:$9( 5(48(1&< '28%/(5 00,& *+] 72 *+] 7\SLFDO $SSOLFDWLRQV • Narrow and Broadband Commercial and Military Radio Designs • Upconversion Stage used in MW Radio/ Optical Designs • Linear and Saturated Radio Applications GENERAL PURPOSE
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NKD-100-D
NKD-100-D
24GHz.
84-1LMI
ablebond epoxy
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84-1LMI
Abstract: No abstract text available
Text: NKD-100-D 4 MILLIMETER-WAVE FREQUENCY DOUBLER MMIC 5GHz TO 24GHz Typical Applications • Narrow and Broadband Commercial and • Upconversion Stage used in MW Radio/ Optical Designs Military Radio Designs • Linear and Saturated Radio Applications GENERAL PURPOSE
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NKD-100-D
24GHz
NKD-100-D
24GHz.
84-1LMI
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FD3055
Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Text: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve
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RFD3055,
RFD3055SM,
RFP3055
TA49082.
175oC
TB334
FD3055
Fp3055
IS433
4078 relay
RFP3055
TB334
AN7254
RFD3055
RFD3055SM
RFD3055SM9A
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ericsson
Abstract: No abstract text available
Text: Preliminary April 1997 PBR 522 01/1 LPM Line Protection Module Description Key Features The Line Protection Module LPM PBR 522 01/1 consists of a ratio matched line resistor pair including thermistors (PTC´s) and two ringtrip/ringfeed resistors on a ceramic substrate. PBR 522 01/1 is used in telephone line interface overvoltage
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1522-PBR
S-164
ericsson
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8 pin 4435 ic voltage out and in
Abstract: 4435 mosfet
Text: ANP012 Application Note AP2004 Buck Controller Contents 1. AP2004 Specification 1.1 Features 1.2 1.3 1.4 1.5 General Description Pin Assignments Pin Descriptions Block Diagram 1.6 Absolute Maximum Ratings 2. Hardware 2.1 Introduction 2.2 2.3 2.4 2.5 Typical Application
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ANP012
AP2004
1000uF/25V"
8 pin 4435 ic voltage out and in
4435 mosfet
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transistor pcr 406
Abstract: 4435 transistor so-8 PCR 406 TRANSISTOR smd TRANSISTOR 1D AIC1578CS 4435 mosfet 4435 SO-8 470f 10 SMD 4435 SMD Transistor 1F
Text: AN99-001 High Efficiency LCD Monitor Power Design Using AIC1578 Michael Huang DESCRIPTION are ideal for portable equipment. The AIC1578 is a high performance step-down In order to maintain good conversion efficiency DC/DC converter, designed to drive an external
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AN99-001
AIC1578
AIC1578
AIC1578CS
CEM4435
AIC1085CM
1N5820
470mF
transistor pcr 406
4435 transistor so-8
PCR 406 TRANSISTOR
smd TRANSISTOR 1D
AIC1578CS
4435 mosfet
4435 SO-8
470f 10
SMD 4435
SMD Transistor 1F
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4435 transistor so-8
Abstract: 4435 mosfet AN007 4435 SO-8 SMD 4435 PCR 406 TRANSISTOR smd transistor 513 4435 smd transistor pcr 406 4435* mos
Text: AN007 High Efficiency LCD Monitor Power Design Using AIC1578 DESCRIPTION are ideal for portable equipment. The AIC1578 is a high performance step-down In order to maintain good conversion efficiency DC/DC converter, designed to drive an external form light loads to full loads, the AIC1578 uses the
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AN007
AIC1578
AIC1578
AIC1578CS
CEM4435
AIC1085CM
1N5820
O-263
4435 transistor so-8
4435 mosfet
AN007
4435 SO-8
SMD 4435
PCR 406 TRANSISTOR
smd transistor 513
4435 smd
transistor pcr 406
4435* mos
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tic 2260
Abstract: FDS4435 CBVK741B019 F63TNR L86Z
Text: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS4435 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features This P-Channel Logic Level M OSFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to minimize
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FDS4435
tic 2260
FDS4435
CBVK741B019
F63TNR
L86Z
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Untitled
Abstract: No abstract text available
Text: •I iT ! 43D5271 H A R G0S414D R DES IS HAS IRFF130/131/13 2/133 IRFF130R/131 R /132R/133R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2 0 5 A F • 7.0A and 8.0A, 80V - 100V • rDS on = 0.18 fl and 0 .2 5 fi • Single Pulse Avalanche Energy Rated*
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43D5271
G0S414D
IRFF130/131/13
IRFF130R/131
/132R/133R
IRFF13Q,
IRFF131,
IRFF132,
IRFF133
IRFF130R,
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4433 mosfet
Abstract: 4435 mosfet mosfet 4433 AALN IRFF131
Text: 2 HARRIS IR FF1 30/131/132/133 IR F F 1 3 0 R /1 31 R /1 3 2 R /1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A ugust 1991 Features • Package T0205A F 7 .0 A a n d 8 .0 A , 8 0 V - 1 0 0 V • r D S (o n = 0 . 1 8 f t a n d 0 .2 5 f t • S in g le P u lse A v a la n c h e E n e rg y R a te d *
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T0205A
IRFF130,
IRFF131,
IRFF132,
IRFF133
IRFF130R,
IRFF131R,
IRFF132R,
IRFF133R
8REAK00WN
4433 mosfet
4435 mosfet
mosfet 4433
AALN
IRFF131
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MN56020
Abstract: QFP40 MN56030 mn53000 S8480 QFP-40 mn5504 N530 I/MN56050
Text: • CMOS Gate Arrays •S eries Lineup Delay Time * Series Features Low gate, Few pin package MN53000 1.4ns V d d “ 5V MN55000 Fixed ROM/RAM built-in (RAM 2Kbit, 4Kbit) MN56000 Standard channel type gate array Sea-of-gate, Optional bit, Word RAM/ROM possible, RAM 16Kbit max., ROM 64Kbit max.
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MN53000
MN55000
MN56000
MN56A00
MN56E00
MN56B00
MN59000
MN5AA000
MN5AC000
16Kbit
MN56020
QFP40
MN56030
S8480
QFP-40
mn5504
N530
I/MN56050
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Untitled
Abstract: No abstract text available
Text: RFD3055, RFD3055SM, RFP3055 Semiconductor Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs File Number 3648.2 Features • 12A, 60V These are N-Channel enhancem ent mode silicon gate • rDS ON = 0.150i2 power field effect transistors. They are advanced power
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RFD3055,
RFD3055SM,
RFP3055
150i2
|
Ericsson TN R4
Abstract: Mi 4435
Text: ERICSSON ^ Preliminary April 1997 PBR 522 01/1 LPM Line Protection Module Description The Line Protection Module LPM PBR 522 01/1 consists of a ratio matched line resistor pair including thermistors (PTC's) and two ringtrip/ringfeed resistors on a ceramic substrate. PBR 522 01/1 is used in telephone line interface overvoltage
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PDF
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1522-PBR
S-164
Ericsson TN R4
Mi 4435
|
Untitled
Abstract: No abstract text available
Text: WA60 WORLDWIDE W A G O Com panies and Representations Argentina AEA S.A.C.I.F. Asuncion 2130 1419 Buenos Aires Phone +54/11 /45741555 Fax +54/11/45742400 Australia Finland Italy M ODIO O Y Pulttitie 2 A 00880 Helsinki Phone +358-9-7744 060 Fax +358-9-7744 0660
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61/3/9429-299s
8015-Puerto
1-800-D
1-800-DIN
|
la 7630
Abstract: No abstract text available
Text: W A G O Companies and Representations A rg e n tin a Fin la n d Ita ly Sin g a p o re AEA S.A.C.I.F. Asuncion 2130 1419 Buenos Aires Phone + + 5 4 / 1 1 /45741555 Fax + + 5 4 / 1 1 /4574 2400 MODIO OY Pulttitie 2 A 00880 Helsinki Phone + + 3 5 8 -9 -7 7 4 4 060
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1-800-DIN
304-Zona
8015-Puerto
la 7630
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