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    SI4435DY Price and Stock

    onsemi SI4435DY

    MOSFET P-CH 30V 8.8A 8SOIC
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    Infineon Technologies AG SI4435DYTRPBF

    MOSFET P-CH 30V 8A 8SO
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    Infineon Technologies AG SI4435DY

    MOSFET P-CH 30V 8A 8SO
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    DigiKey SI4435DY Tube 95
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    UMW SI4435DY

    MOSFET P-CH 30V 8.8A 8SOIC
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    DigiKey SI4435DY Reel 3,000
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    Infineon Technologies AG SI4435DYTR

    MOSFET P-CH 30V 8A 8SO
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    DigiKey SI4435DYTR Reel 4,000
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    Find more SI4435DY price and stock on Findchips.com

    SI4435DY Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4435DY Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    SI4435DY Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    SI4435DY International Rectifier HEXFET Power MOSFET Original PDF
    SI4435DY Kexin P-Channel MOSFET Original PDF
    Si4435DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si4435DY International Rectifier HEXFET Power MOSFET Scan PDF
    SI4435DY_NF073 Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    SI4435DY_NL Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    SI4435DYPBF International Rectifier HEXFET Power MOSFET Original PDF
    SI4435DY-REVA Vishay Telefunken P-Channel 30-V (D-S) MOSFET Original PDF
    SI4435DY-REVA Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -30V, Single, Pkg Style TSSOP-8 Scan PDF
    Si4435DY SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI4435DYTR International Rectifier -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package Original PDF
    SI4435DYTRPBF International Rectifier Original PDF

    SI4435DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7w66

    Abstract: Si4435DY D665
    Text: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4435DY 7w66 D665

    Si64

    Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94

    Si4435DY

    Abstract: No abstract text available
    Text: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4435DY S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: No abstract text available
    Text: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4435DY S-47958--Rev. 15-Apr-96

    SI4435DY

    Abstract: AN609 74549N
    Text: Si4435DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4435DY AN609 31-Aug-05 74549N

    S-49534

    Abstract: Si4435DY
    Text: Si4435DY P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4435DY S-49534--Rev. 06-Oct-97 S-49534

    IRF7101

    Abstract: Si4435DYPbF
    Text: PD- 95133 Si4435DYPbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D 1 8 2 7 D S 3 6 D G 4 5 D S S VDSS = -30V RDS on = 0.020Ω Top View Description These P-channel HEXFET® Power MOSFETs from


    Original     		PDF Si4435DYPbF EIA-481 EIA-541. IRF7101

    S-49534

    Abstract: Si4435DY
    Text: Si4435DY P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4435DY S-49534--Rev. 06-Oct-97 S-49534

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9430DY
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si9430DY

    Abstract: Si4435DY Si4953DY Si6435DQ
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9430DY
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96

    Si4435DY

    Abstract: si4435
    Text: SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original     		PDF SI4435DY Si4435DY si4435

    SI4435DY

    Abstract: SI4435DY-T1
    Text: Si4435DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –30 30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V –8.0 0.035 @ VGS = –4.5 V –6.0 D Lead (Pb)-Free Version is RoHS Compliant S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G


    Original     		PDF Si4435DY Si4435DY-T1 18-Jul-08

    PR40

    Abstract: js27 C598 BKLVMAIN SFPJ-73 JS11
    Text: 1 2 3 4 5 6 7 8 1 1 PD2 SFPJ-73 DC2010 EMI2 24 ADINP PL1 BEAD_120Z/100M_6A 2012 26,27 D_VMAIN PR40 100K 0603 VMAIN JO5 D_VMAIN 26,27 OPEN-SMT4_DFS S VDD5 PQ505 SI4435DY SO8 PR35 261K_1% 0603 JS10 R170 100K 0603 GND R551 33K 0603 D_VMAIN 26,27 19 BKL_VMAIN


    Original     		PDF SFPJ-73 DC2010 120Z/100M PC501 PQ506 DTC144WK PQ507 2N7002 LMV393 2N7002 PR40 js27 C598 BKLVMAIN JS11

    7w66

    Abstract: No abstract text available
    Text: Si4435DY* P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4435DY 7w66

    Si4435DY

    Abstract: No abstract text available
    Text: Si4435DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.02 @ VGS = -10 V "8.0 0.035 @ VGS = -4.5 V "6.0 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4435DY S45252Rev.

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 70513 51361

    Si4435DY

    Abstract: a2019
    Text: SPICE Device Model Si4435DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4435DY S-51095Rev. 13-Jun-05 a2019

    Untitled

    Abstract: No abstract text available
    Text: PD- 95133 Si4435DYPbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D 1 8 2 7 D S 3 6 D G 4 5 D S S VDSS = -30V RDS on = 0.020Ω Top View Description These P-channel HEXFET® Power MOSFETs from


    Original     		PDF Si4435DYPbF EIA-481 EIA-541.

    IRF7101

    Abstract: Si4435DYPbF
    Text: PD- 95133 Si4435DYPbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D 1 8 2 7 D S 3 6 D G 4 5 D S S VDSS = -30V RDS on = 0.020Ω Top View Description These P-channel HEXFET® Power MOSFETs from


    Original     		PDF Si4435DYPbF EIA-481 EIA-541. IRF7101

    Si9430DY

    Abstract: Si4435DY Si4953DY Si6435DQ SI9430DY equivalent
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96 SI9430DY equivalent

    Untitled

    Abstract: No abstract text available
    Text: SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original     		PDF SI4435DY