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    FDS4435 Search Results

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    FDS4435 Price and Stock

    onsemi FDS4435BZ

    MOSFET P-CH 30V 8.8A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDS4435BZ Reel 15,000 2,500
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    • 10000 $0.24598
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    FDS4435BZ Cut Tape 3,546 1
    • 1 $0.68
    • 10 $0.592
    • 100 $0.41
    • 1000 $0.29153
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    FDS4435BZ Digi-Reel 1
    • 1 $0.68
    • 10 $0.592
    • 100 $0.41
    • 1000 $0.29153
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    Avnet Americas FDS4435BZ Ammo Pack 53 Weeks, 5 Days 1
    • 1 $0.72
    • 10 $0.6
    • 100 $0.439
    • 1000 $0.439
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    Mouser Electronics FDS4435BZ 81,545
    • 1 $0.68
    • 10 $0.529
    • 100 $0.401
    • 1000 $0.27
    • 10000 $0.227
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    Bristol Electronics FDS4435BZ 1,440 9
    • 1 -
    • 10 $0.5625
    • 100 $0.3656
    • 1000 $0.18
    • 10000 $0.1575
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    FDS4435BZ 1,652
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    Quest Components FDS4435BZ 1,152
    • 1 $0.75
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    • 100 $0.75
    • 1000 $0.195
    • 10000 $0.195
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    FDS4435BZ 1,321
    • 1 $0.8385
    • 10 $0.8385
    • 100 $0.8385
    • 1000 $0.3354
    • 10000 $0.3354
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    FDS4435BZ 18
    • 1 $0.8575
    • 10 $0.686
    • 100 $0.686
    • 1000 $0.686
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    Rochester Electronics FDS4435BZ 2,689 1
    • 1 $0.2631
    • 10 $0.2631
    • 100 $0.2473
    • 1000 $0.2236
    • 10000 $0.2236
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    TME FDS4435BZ 1,483 1
    • 1 $1.23
    • 10 $0.481
    • 100 $0.385
    • 1000 $0.353
    • 10000 $0.353
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    Avnet Asia FDS4435BZ 10,000 16 Weeks 5,000
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    • 10000 $0.24053
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    New Advantage Corporation FDS4435BZ 22,500 1
    • 1 -
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    • 10000 $0.421
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    onsemi FDS4435A

    MOSFET P-CH 30V 9A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDS4435A Cut Tape 146 1
    • 1 $1.08
    • 10 $0.884
    • 100 $0.6872
    • 1000 $0.6872
    • 10000 $0.6872
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    FDS4435A Reel
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    FDS4435A Digi-Reel 1
    • 1 $1.08
    • 10 $0.884
    • 100 $0.6872
    • 1000 $0.6872
    • 10000 $0.6872
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    Bristol Electronics FDS4435A 47 3
    • 1 -
    • 10 $2.1
    • 100 $1.3125
    • 1000 $1.3125
    • 10000 $1.3125
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    Quest Components FDS4435A 37
    • 1 $2.8
    • 10 $2.1
    • 100 $1.75
    • 1000 $1.75
    • 10000 $1.75
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    onsemi FDS4435

    MOSFET P-CH 30V 8.8A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDS4435 Cut Tape
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    FDS4435 Reel
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    Rochester Electronics LLC FDS4435A

    MOSFET P-CH 30V 9A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDS4435A Bulk 229
    • 1 -
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    • 1000 $1.31
    • 10000 $1.31
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    onsemi FDS4435BZ-G

    MOSFET P-CH 30V 8.8A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDS4435BZ-G Reel
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    Find more FDS4435 price and stock on Findchips.com

    FDS4435 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDS4435 Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    FDS4435 Fairchild Semiconductor 30 V P-Channel PowerTrench MOSFET Original PDF
    FDS4435 Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    FDS4435 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDS4435 Fairchild Semiconductor Single P-Channel, Logic Level, PowerTrench MOSFET Scan PDF
    FDS4435A Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    FDS4435A Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    FDS4435A Fairchild Semiconductor P-Channel, Logic Level, PowerTrench MOSFET Original PDF
    FDS4435A Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    FDS4435A_NF073 Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    FDS4435A_NL Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    FDS4435BZ Fairchild Semiconductor P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Ohm Original PDF
    FDS4435BZ Fairchild Semiconductor P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Ohm Original PDF
    FDS4435BZ Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    FDS4435BZ_F085 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 8-SOIC Original PDF
    FDS4435BZ-F085 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 8-SOIC Original PDF
    FDS4435BZ_NL Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    FDS4435_NF073 Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    FDS4435_NL Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF

    FDS4435 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDS4435A

    Abstract: No abstract text available
    Text: FDS4435A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior


    Original     		PDF FDS4435A FDS4435A

    FDS4435BZ

    Abstract: No abstract text available
    Text: FDS4435BZ_F085 P-Channel PowerTrench MOSFET -30V, -8.8A, 20m: Features General Description „ Max rDS on = 20m: at VGS = -10V, ID = -8.8A This „ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench® process that has „ Extended VGSS range (-25V) for battery applications


    Original     		PDF FDS4435BZ

    Untitled

    Abstract: No abstract text available
    Text: FDS4435 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original     		PDF FDS4435

    FDS4435BZ

    Abstract: No abstract text available
    Text: FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m: Features General Description „ Max rDS on = 20m: at VGS = -10V, ID = -8.8A This „ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench® process that has „ Extended VGSS range (-25V) for battery applications


    Original     		PDF FDS4435BZ FDS4435BZ

    diode SM 88A

    Abstract: FDS4435BZ_F085 FDS4435BZ FDS4435BZ-F085
    Text: FDS4435BZ_F085 P-Channel PowerTrench MOSFET -30V, -8.8A, 20m: Features General Description „ Max rDS on = 20m: at VGS = -10V, ID = -8.8A This „ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench® process that has „ Extended VGSS range (-25V) for battery applications


    Original     		PDF FDS4435BZ diode SM 88A FDS4435BZ_F085 FDS4435BZ-F085

    FDS4435A

    Abstract: L86Z CBVK741B019 F011 F63TNR F852 FDS9953A
    Text: FDS4435A P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior


    Original     		PDF FDS4435A FDS4435A L86Z CBVK741B019 F011 F63TNR F852 FDS9953A

    FDS4435BZ

    Abstract: No abstract text available
    Text: FDS4435BZ 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild ® Semiconductor’s advanced PowerTrench process that • –8.8 A, –30 V. RDS ON = 20 mΩ @ VGS = –10 V has been especially tailored to minimize the on-state


    Original     		PDF FDS4435BZ FDS4435BZ

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS4435A FDS9953A L86Z
    Text: FDS4435A P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior


    Original     		PDF FDS4435A CBVK741B019 F011 F63TNR F852 FDS4435A FDS9953A L86Z

    FDS4435

    Abstract: IC fds4435 aaas SA2A da2aa 7w66 fds4435 mosfet
    Text: FDS4435 P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF FDS4435 FDS4435 IC fds4435 aaas SA2A da2aa 7w66 fds4435 mosfet

    FDS4435BZ

    Abstract: No abstract text available
    Text: FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20mΩ Features General Description „ Max rDS on = 20mΩ at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced ® using Fairchild „ Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench


    Original     		PDF FDS4435BZ FDS4435BZ

    FDS4435

    Abstract: IC fds4435 7w66 fds4435 mosfet SA2A "aaqa AAAS
    Text: FDS4435 P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF FDS4435 FDS4435 IC fds4435 7w66 fds4435 mosfet SA2A "aaqa AAAS

    FDS4435A

    Abstract: No abstract text available
    Text: FDS4435A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior


    Original     		PDF FDS4435A FDS4435A

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS4435A FDS9953A L86Z
    Text: FDS4435A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior


    Original     		PDF FDS4435A CBVK741B019 F011 F63TNR F852 FDS4435A FDS9953A L86Z

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS4435A FDS9953A L86Z
    Text: FDS4435A P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior


    Original     		PDF FDS4435A CBVK741B019 F011 F63TNR F852 FDS4435A FDS9953A L86Z

    diode SM 88A

    Abstract: FDS4435BZ
    Text: FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m: Features General Description „ Max rDS on = 20m: at VGS = -10V, ID = -8.8A This „ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench® process that has „ Extended VGSS range (-25V) for battery applications


    Original     		PDF FDS4435BZ diode SM 88A FDS4435BZ

    Common rail piezo injector driver

    Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
    Text: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or


    Original     		PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: TPS65148 www.ti.com SLVS904A – MAY 2009 – REVISED JANUARY 2011 Compact TFT LCD Bias IC for Monitor with VCOM Buffer, Voltage Regulator for Gamma Buffer and Reset Function Check for Samples: TPS65148 FEATURES 1 • • • • • • • 2.5V to 6V Input Voltage Range


    Original     		PDF TPS65148 SLVS904A 630kHz/1

    sk 8050 rf

    Abstract: smd diode 815b C8050 schottky C475 DIODE 2C101 m15 fah 001 8 24VDc R5C592 LTN154X1-L02 W83L950 BGA144F
    Text: SERVICE MANUAL FOR 8050 BY: Grass.Ren Repair Technology Research Department /EDVD Feb.2004 8050 N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………. 1.1 Introduce ……………………………………………………………………………………………….


    Original     		PDF 855GME VT6307L IEEE1394 sk 8050 rf smd diode 815b C8050 schottky C475 DIODE 2C101 m15 fah 001 8 24VDc R5C592 LTN154X1-L02 W83L950 BGA144F

    d5024

    Abstract: B1DHDC000028 1R154 MA2J72900L LE80536 R1112N331B-TR-FA K1KA02BA0014 NC131 Q13MC3061000414 B1CFMC000008
    Text: CF-Y4 Schematic Diagram Main 1 DOTHAN HOST BUS VC15 1 VCPUCORE E7 E9 C46 10u 6.3V C41 10u 6.3V C35 10u 6.3V C30 10u 6.3V C24 10u 6.3V C20 10u 6.3V C16 10u 6.3V C12 10u 6.3V 2 C7 10u 6.3V C3 10u 6.3V E17 E19 E21 F6 F8 GND F18 F20 F22 C47 10u 6.3V C42 10u 6.3V


    Original     		PDF FDS6690A NBNP006 B1DBGD000006 SENSE27 UNR9214J0L 1500p IC613 C0DBDJH00009 LTC4008EGN d5024 B1DHDC000028 1R154 MA2J72900L LE80536 R1112N331B-TR-FA K1KA02BA0014 NC131 Q13MC3061000414 B1CFMC000008

    8a320

    Abstract: TEESVB TEESVB21A VT1631 RM06FTN TEESVA1A 2R5TPE330M9 sanyo TEESVB21 CB1410QF smd transistor A7p
    Text: 5 3 2 1 First International Computer,Inc Portable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : LM7WV 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : D C 4. Net name Description :


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    Untitled

    Abstract: No abstract text available
    Text: F A IR C H IL D October 1998 S E M I C O N D U C T O R tm FDS4435 Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan     		PDF FDS4435

    fds4435 mosfet

    Abstract: Power MOSFET, Fairchild FDS4435 ds4435 2197f
    Text: FDS4435 FAIRCHILD October 1998 S E M I C O N D U C T O R TM FDS4435 Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan     		PDF FDS4435 FDS4435 DS4435 fds4435 mosfet Power MOSFET, Fairchild 2197f

    tic 2260

    Abstract: FDS4435 CBVK741B019 F63TNR L86Z
    Text: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS4435 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features This P-Channel Logic Level M OSFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to minimize


    OCR Scan     		PDF FDS4435 tic 2260 FDS4435 CBVK741B019 F63TNR L86Z