25V 1A power MOSFET TO-220
Abstract: mosfet 600V 2A TO-252 N-channel MOSFET MOSFET TO-220
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
25V 1A power MOSFET TO-220
mosfet 600V 2A
TO-252 N-channel MOSFET
MOSFET TO-220
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TSM2N60CP
Abstract: MOSFET 600V 1A 2a 400v mosfet to-251 TSM2N60 TSM2N60CH
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
TSM2N60CP
MOSFET 600V 1A
2a 400v mosfet to-251
TSM2N60CH
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18BSC
Abstract: TSM2N60 TSM2N60CH TSM2N60CP
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
18BSC
TSM2N60CH
TSM2N60CP
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Untitled
Abstract: No abstract text available
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
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2a 400v mosfet to-251
Abstract: 600V 2A MOSFET N-channel MOSFET 400V TO-220 2a 400v mosfet marking code C5 N-Channel mosfet 600v 1a SOT c5 87 p channel mosfet 100v pin diagram of MOSFET 435 M dpak
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
2a 400v mosfet to-251
600V 2A MOSFET N-channel
MOSFET 400V TO-220
2a 400v mosfet
marking code C5
N-Channel mosfet 600v 1a
SOT c5 87
p channel mosfet 100v
pin diagram of MOSFET
435 M dpak
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2a 400v mosfet to-251
Abstract: N-Channel mosfet 600v 1a BRIDGE 2A 600V MOSFET TO-220 MOSFET "CURRENT source" impedance mosfet 600V 2A TO-252 N-channel MOSFET
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
2a 400v mosfet to-251
N-Channel mosfet 600v 1a
BRIDGE 2A 600V
MOSFET TO-220
MOSFET "CURRENT source" impedance
mosfet 600V 2A
TO-252 N-channel MOSFET
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8201N
Abstract: NGD8201N NGD8201NT4
Text: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGD8201N
NGD8201N/D
8201N
NGD8201N
NGD8201NT4
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Untitled
Abstract: No abstract text available
Text: CDM7-650 SURFACE MOUNT SILICON N-CHANNEL MEDIUM POWER MOSFET 7.0 AMP, 650 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM7-650 is a 650 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor
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CDM7-650
CDM7-650
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Untitled
Abstract: No abstract text available
Text: NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high
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NGD8209N
NGD8209N/D
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Untitled
Abstract: No abstract text available
Text: NGD8201B Ignition IGBT, 20 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGD8201B
NGD8201B/D
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2501 optocoupler
Abstract: Panasonic AMS 302 transformers 321 464 FZT688 efd-15 transformer TL431 928 soft start circuit 555 timer MOS FET SOT-223 2501 optocoupler Datasheet LM555
Text: CS51021ADEMO/D Demonstration Note for CS51021A/CS51022A A 36–72 V In, 5 V/5 A Out, Forward Converter Using the CS51021A/22A Enhanced Current Mode Controller http://onsemi.com DEMONSTRATION NOTE Features • Forward Convertor Topology • Undervoltage and Overvoltage Shutdown
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CS51021ADEMO/D
CS51021A/CS51022A
CS51021A/22A
CS51021A)
CS51022A)
CS51021A/22A
r14525
2501 optocoupler
Panasonic AMS 302
transformers 321 464
FZT688
efd-15 transformer
TL431 928
soft start circuit 555 timer
MOS FET SOT-223
2501 optocoupler Datasheet
LM555
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Untitled
Abstract: No abstract text available
Text: KSMD3N60C 600V N-Channel MOSFET TO-252 Features • 2.4A, 600V, RDS on = 3.4Ω @VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect
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KSMD3N60C
O-252
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FQD3N60C
Abstract: FQD3N60CTF FQD3N60CTM
Text: TM QFET FQD3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQD3N60C
FQD3N60C
FQD3N60CTF
FQD3N60CTM
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RG 2006 10A 600V
Abstract: FQU3N60C FQU3N60CTU FQD3N60C FQD3N60CTF FQD3N60CTM
Text: QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQD3N60C
FQU3N60C
FQU3N60C
RG 2006 10A 600V
FQU3N60CTU
FQD3N60CTF
FQD3N60CTM
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Untitled
Abstract: No abstract text available
Text: FQD3N60CTM_WS N-Channel QFET MOSFET 600 V, 2.4 A, 3.4 Ω Features Description • 2.4 A, 600 V, RDS on = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.2 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
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FQD3N60CTM
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9137
Abstract: surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250
Text: HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max.
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OT-23)
IRLML2402*
IRLML2803
IRLML5103
IRLML6302*
IRFK3DC50
IRFK3F150
O-240AA
IRFK3F250
IRFK3F350
9137
surface mount IRFZ44N
IRFK3D450
IRFK4H054
IRLI640G
IRFBg30 equivalent
hexfet power mosfets international rectifier
IRFP260
IRC540 equivalent
irf 3250
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Untitled
Abstract: No abstract text available
Text: SQD50N06-09L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.013 ID (A)
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SQD50N06-09L
2002/95/EC
AEC-Q101
O-252
O-252
SQD50N06-09L-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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solar led
Abstract: XC10B5 SOT23-6 marking 658 NCL30100 transistor manual substitution FREE MOSFET 4407 LED050 SOD523 1N4148 pwm solar charge controller schematic triac dimmer LED mr16
Text: NCL30100 Fixed Off Time Switched Mode LED Driver Controller The NCL30100 is a compact switching regulator controller intended for space constrained constant current high-brightness LED driver applications where efficiency and small size are important. The
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NCL30100
NCL30100/D
solar led
XC10B5
SOT23-6 marking 658
transistor manual substitution FREE
MOSFET 4407
LED050
SOD523 1N4148
pwm solar charge controller schematic
triac dimmer LED mr16
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Transistor AC 51
Abstract: sot transistor pinout Schottky Diode SOT-89 sot89 scr 431 sot89 431 sot 23 zener diode sot89 2 Zener Diode SOT-23 sot-23 JFET 2 Zener Diode 431
Text: M echanical Drawings Dimensions in inches mm . DPAK T O P VIEW .0 8 6 (2 .1 9 ) k .0 9 4 (2 .4 0 ) H .0 1 8 (0 .4 5 ) u .0 2 4 (0 .6 0 ) P r i .0 2 0 (0 .5 1 ) M IN IM U M .0 1 8 (0 .4 5 ) .0 2 4 (0 .6 0 ) .0 3 5 (0 .8 9 ) .0 4 5 (1 .1 4 ) L D2PAK .390(9 .90)
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OT-143
OT-223
Transistor AC 51
sot transistor pinout
Schottky Diode SOT-89
sot89 scr
431 sot89
431 sot 23
zener diode sot89
2 Zener Diode SOT-23
sot-23 JFET
2 Zener Diode 431
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SOT-252 20v
Abstract: N-Channel mosfet 600v 1a U26S 25CC TSM2N60 TSM2N60CH TSM2N60CP marking code 749 diode BBC u035
Text: $ TAIW AN TSM2N60 SEMICONDUCTOR 600V N-Channei Power MOSFET pb RoHS C O M P L IA N C E TO-251 TO-252 (DPAK) (IPAK) Jü F à P in D e f in it io n : 1. G ate 2. Drain 3. Source PRODUCT SUM M ARY V DS (V) R D S (o n )(Û ) I d (A) 6Û0 5 @ Vcs=10V 1 T 7V T
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TSM2N60
O-220
O-251
O-252
TSM2N60
SOT-252 20v
N-Channel mosfet 600v 1a
U26S
25CC
TSM2N60CH
TSM2N60CP
marking code 749
diode BBC
u035
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IRF460 in TO220
Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
Text: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of
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T0-240AA
IRF460 in TO220
IRF09110
IRF448
of IRF9540 and IRF540
irf460 switching
irf460 to247
IRF250 TO-247
IRF244
Application of irf250
IRFD9120 N CHANNEL
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Untitled
Abstract: No abstract text available
Text: rzT SGS-THOMSON Ä 7# » œ s iL IC T r a ie S S T D 1 5 N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss RDS on S TD15N06 60 V < 0.1 n •d % 15 A Q . TYPICAL RDS(on) = 0.075 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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TD15N06
O-251)
O-252)
O-251
O-252
AN047
STD15N06
0068772-B
0DA1557
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FL110
Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Text: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case
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OT-89
OT-89
IRCC044
IRCC140
IRCC240
IRCC244
IRCC340
IRCC440
IRCC054
FL110
LL110
irf7408
lr014
IRC540 equivalent
IRL1Z14G
IRFC024
IRFBE30 equivalent
IRFCG50
irfbc10lc
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5252 F 1108
Abstract: 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211
Text: B 2 S A series P 5 5 6 8 8 8 6 6 6 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 9 5 5 5 5 5 5 5 5 5 6 5 5 8 8 8 6 P*c*^aeoda TO-92 TO-92 TO-92 TO-126M TO-126M TO-126M TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
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O-126M
12IFP-8DA
24Sfc
2025R
2026R
2027R
2029R
2031T
5252 F 1108
4550J
TO220FM
12015C
5252 F 1104
0345A
msp18
E1113
K2613
SP1211
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