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    NGD8201NT4 Price and Stock

    onsemi NGD8201NT4

    IGBT 440V 20A DPAK
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    DigiKey NGD8201NT4 Reel 2,500
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    onsemi NGD8201NT4G

    IGBT 440V 20A DPAK
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    DigiKey NGD8201NT4G Reel 2,500
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    Newark NGD8201NT4G Cut Tape 2,500
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    NGD8201NT4G Reel 2,500
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    EBV Elektronik NGD8201NT4G 26 Weeks 2,500
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    NGD8201NT4 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NGD8201NT4 On Semiconductor Ignition IGBT 20 A, 400V, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 Original PDF
    NGD8201NT4 On Semiconductor Ignition IGBT 20 A, 400 V, N-Channel DPAK Original PDF
    NGD8201NT4 On Semiconductor Ignition IGBT 20 A, 400 V, N-Channel DPAK Original PDF
    NGD8201NT4 On Semiconductor IGBT Chip, N Channel, 440V, DPAK, 4-Pin Original PDF
    NGD8201NT4G On Semiconductor NGD8201 - TRANSISTOR 20 A, 400 V, N-CHANNEL IGBT, LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3, Insulated Gate BIP Transistor Original PDF
    NGD8201NT4G On Semiconductor TRANS IGBT CHIP N-CH 440V 20A 3DPAK T/R Original PDF

    NGD8201NT4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8201N

    Abstract: 20A400 Direct fuel injection ignition IGBT
    Text: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N 8201N 20A400 Direct fuel injection ignition IGBT

    8201N

    Abstract: ignition coil IGBT
    Text: NGD8201N Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGD8201N NGD8201N/D 8201N ignition coil IGBT

    Untitled

    Abstract: No abstract text available
    Text: NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N, NGD8201AN NGD8201N/D

    BS170 116

    Abstract: NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2
    Text: Data Sheet Page Data Sheet Page Data Sheet Page 2N7000 17, 26 MMBF170LT3 12, 95 NTA4001NT1 11, 259 2N7000RLRA 17, 26 MMBF170LT3 12, 95 NTA4151PT1 11, 263 2N7000RLRM 17, 26 MMBF2201NT 11, 98 NTA4153NT1 11, 268 2N7000RLRP 17, 26 MMBF2202PT1 11, 102 NTB125N02R


    Original     		PDF 2N7000 2N7000RLRA 2N7000RLRM 2N7000RLRP 2N7000ZL1 2N7002L 2N7002LT1 2N7002LT3 BS107 BS107A BS170 116 NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2

    ignition IGBT

    Abstract: No abstract text available
    Text: ON Semiconductor Selector Guide − Power MOSFET Products Ignition IGBT − Insulated Gate Bipolar Transistors VCE on (V) VGE = 4.0 V IC = 6.0 A VGE = 4.5 V IC = 10 A Min Energy Ratings Clamp Voltage Switching Speed (IC = 6.5 A) EAS (mJ) VCES (V) Resistive


    Original     		PDF O-252) NGD8201NT4 NGD8205NT4 NGD18N40CLBT4 NGD15N41CLT4 O-264) NGB8202NT4 NGB8206NT4 NGB18N40CLBT4 ignition IGBT

    8201N

    Abstract: NGD8201N NGD8201NT4
    Text: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201N NGD8201N NGD8201NT4

    8201NG

    Abstract: NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4
    Text: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201NG NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


    Original     		PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G

    8201N

    Abstract: 20A400 NGD8201N NGD8201NT4
    Text: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201N 20A400 NGD8201N NGD8201NT4

    8201N

    Abstract: NGD8201N NGD8201NT4 ngd8201
    Text: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGD8201N NGD8201N/D 8201N NGD8201N NGD8201NT4 ngd8201

    8201N

    Abstract: NGD8201N NGD8201NT4
    Text: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201N NGD8201N NGD8201NT4

    8201NG

    Abstract: 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G
    Text: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201NG 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G

    NGD8201N

    Abstract: 8201x NGD8201AN 8201xg NGD8201ANT4G
    Text: NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N, NGD8201AN NGD8201N/D NGD8201N 8201x 8201xg NGD8201ANT4G

    NGD8201A

    Abstract: No abstract text available
    Text: NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N, NGD8201AN NGD8201N/D NGD8201A

    CS5170

    Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
    Text: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004  General Information Elimination Of Ozone Depleting Chemicals . . . .


    Original     		PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL CS5170 MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60