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Abstract: No abstract text available
Text: FQD3N60C / FQU3N60C N-Channel QFET MOSFET 600 V, 2.4 A, 3.4 Ω Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQD3N60C
FQU3N60C
FQU3N60C
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FQD3N60C
Abstract: FQD3N60CTF FQD3N60CTM
Text: TM QFET FQD3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQD3N60C
FQD3N60C
FQD3N60CTF
FQD3N60CTM
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RG 2006 10A 600V
Abstract: FQU3N60C FQU3N60CTU FQD3N60C FQD3N60CTF FQD3N60CTM
Text: QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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Original
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PDF
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FQD3N60C
FQU3N60C
FQU3N60C
RG 2006 10A 600V
FQU3N60CTU
FQD3N60CTF
FQD3N60CTM
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