2n3866
Abstract: 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427
Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial
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2N3866;
2N4427
SC08a
O-39/1
2n3866
2n4427
2N3866 application note
2N3866 class-a
2n3866 philips
RF 2N3866
2N3866 metal
data 2n3866
2N3866 application
Transistor 2n4427
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BY206
Abstract: blw86 4312 020 36640 HF power amplifier PHILIPS 4312 amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f.
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BLW86
BY206
blw86
4312 020 36640
HF power amplifier
PHILIPS 4312 amplifier
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4312 020 36640
Abstract: BLW86 HF power amplifier ferroxcube wideband hf choke PHILIPS 4312 amplifier BY206 BY206 diode SOt123 Package 22 pf trimmer capacitor datasheet 4 carbon wire resistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLW86
SC08a
4312 020 36640
BLW86
HF power amplifier
ferroxcube wideband hf choke
PHILIPS 4312 amplifier
BY206
BY206 diode
SOt123 Package
22 pf trimmer capacitor datasheet
4 carbon wire resistor
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Philips 4312 020
Abstract: BLV25 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier
Text: APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors AN98031 Philips Semiconductors Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 2.2 2.3 The output network The input network
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BLV25
AN98031
BLV25
BLW86
SCA57
Philips 4312 020
Philips 2222
ferrite fxc3b
fxc3b
PHILIPS 4312
blw 64 rf transistor
PHILIPS 4312 amplifier
philips rf choke ferrite
151 schematic for 88 to 108 amplifier
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TRANSISTOR blw97
Abstract: MGP705 4312 020 36640 BLW97 transistor d1 391 MLA876 SOT121B 101 Ceramic Disc Capacitors
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A,
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BLW97
SC08a
TRANSISTOR blw97
MGP705
4312 020 36640
BLW97
transistor d1 391
MLA876
SOT121B
101 Ceramic Disc Capacitors
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philips blx15
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E ]> • b b S B ' m PDE^S74 bOO « A P X BLX15 _ A H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:
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BLX15
7Z67664
philips blx15
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4312 020 36640
Abstract: ferroxcube wideband hf choke
Text: N AMER PHILIPS/DISCRETE bbS3T31 0 0 2 W 0 SS3 I IAPX BLX39 b^E 3> H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is
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bbS3T31
BLX39
juF/10
/zF/35
4312 020 36640
ferroxcube wideband hf choke
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ferroxcube wideband hf choke
Abstract: transistor 4312 BLW50F PHILIPS 4312 amplifier 4312 020 36640 Philips SSB vhf linear pulse power amplifier
Text: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance
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BLW50F
OT123
BLW50F
ferroxcube wideband hf choke
transistor 4312
PHILIPS 4312 amplifier
4312 020 36640
Philips SSB
vhf linear pulse power amplifier
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE APX bb53^31 DOEIMB D ll BLV75/12 T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors for an optimum temperature profile
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BLV75/12
OT-119)
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transistor itt 975
Abstract: BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 002^574 b00 BLX15 IAPX J H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: • rated for 150 W P.E.P. at 1,6 M Hz to 28 MHz
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BLX15
transistor itt 975
BLX15
philips blx15
BY206
blx15 push pull
hie bd135
PHILIPS 4312 amplifier
Philips Application BLX15
TRANSISTOR blx15
4312 020 36640
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbSB'lBl QQE'iBHB 17S • IAPX BLW50F b'JE D H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides
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BLW50F
E13S1
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t 3866 power transistor
Abstract: transistor 3866 s t 3866 transistor transistor 3866
Text: • bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are prim arily intended fo r class-A, B or C amplifiers, frequency m ultiplier and oscillator circuits.
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bb53131
2N3866
2N4427
t 3866 power transistor
transistor 3866 s
t 3866 transistor
transistor 3866
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is
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BLX95
7Z66943
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2n4427
Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640
Text: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.
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711Dfl2b
00L3b7fl
2N3866
2N4427
2N3866
711002b
00b3bÃ
2n4427
Transistor 2N3866
2N3866 metal
2N3866 RF CLASS A
Philips 4312 020
RF 2N3866
2N3866 class-a
2n3866 philips
4312 020 36640
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PR37 RESISTOR
Abstract: PR37 resistors
Text: N AUER PHILIPS/DISCRETE b^E » bbS3^31 □□2'ISIS D72 BLW96 IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, A B and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents
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BLW96
PR37 RESISTOR
PR37 resistors
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4312 020 36640
Abstract: transistor R1Z BLW97 lt5331 ferroxcube wideband hf choke
Text: N AMER PH I L I P S / D I S C R E T E b^E T> • bbSS^! 0aE^S27 ÔTM * A P X BLW97 JL H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed fo r use in class-A, AB and B operated high-power industrial and m ilita ry transm itting equipment in the h.f. band.
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BLW97
OT-121
4312 020 36640
transistor R1Z
BLW97
lt5331
ferroxcube wideband hf choke
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2N3927
Abstract: No abstract text available
Text: bTE D • 2N3924 2N3926 2N3927 bb53*131 003*1766 Tb7 « A P X N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N 3 9 24 is an n-p-n overlay transistor in aT O -39 metal envelope with the collector connected to the case. The 2 N 3 9 26 and the 2N 3 9 27 are n-p-n overlay transistors in TO -60 metal envelopes with the emitter
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2N3924
2N3926
2N3927
bb53T31
7Z08I91
7Z08189
7Z08185
2N3927
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Untitled
Abstract: No abstract text available
Text: • Philips Semiconductors bbSB'lBl 0 0 2 ^ 6 M b M T l * A P X Product specification HF power MOS transistor BLF145 N AUER PHILIPS/DISCRETE FEATURES b^E D PIN CONFIGURATION • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch.
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BLF145
bb53T31
002T85M
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transistor tt 2222
Abstract: TT 2222 philips metal film resistor BLF543 UBA001 WCA910 capacitor philips 425 stripline multilayer ceramic capacitor philips philips resistor 2322
Text: Philips Sem iconductors [^ 5 3 ^ 3 1 0030115 121 • APX ^ ro d u c ts p e c m Ä BLF543 UHF power MOS transistor b * ìE N AMER P H I L I P S / D I S C R E T E D ' PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability
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bbS3T31
OT171
PINNING-SOT171
BLF543
MCA90E
transistor tt 2222
TT 2222
philips metal film resistor
BLF543
UBA001
WCA910
capacitor philips 425
stripline
multilayer ceramic capacitor philips
philips resistor 2322
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Philips polystyrene capacitor
Abstract: ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor
Text: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear
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OT121B.
BLW76
MGP517
Philips polystyrene capacitor
ferroxcube wideband hf choke
PHILIPS 108 CAPACITOR
PolyStyrene capacitor
79lc
SOT121B
Philips polystyrene capacitors
22 pf trimmer capacitor
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2n3375
Abstract: 2n3375 transistor 2N3553
Text: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes
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2N3375
2N3553
2N3632
2N3553
The2N3375
2N3375
2N3632
2n3375 transistor
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PQ-32/MCA908
Abstract: No abstract text available
Text: Philips Semiconductors 0030115 121 • A P X ^ S i a S S i S S S t,h 5 3 m UHF power MOS transistor ^ BLF543 N AMER PHILIPS/DISCRETE b^E » ' PIN CONFIGURATION FEATURES • High power gain • Easy power control / -\ • Good thermal stability o • Gold metallization ensures
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BLF543
OT171
D03D125
MCA905
PQ-32/MCA908
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE D • bbSS1^ ! DQETBbb 77E « A P X BLW76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am
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BLW76
7Z78092
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PDF
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transistor tt 2222
Abstract: TT 2222 enamelled copper wire tables 2222 123 capacitor philips pu enamelled copper wire TL 2222 4312 020 36640 ferroxcube wideband hf choke 22 nF, 63 SOT123 Package
Text: Philips Semiconductors Product specification HF power MOS transistor PHILIPS T -3 ^ -// INTERNATIONAL FEATURES 5bE D I 711002b DOMBbTM BLF145 437 IPHIN PIN CONFIGURATION • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch.
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T-37-IÃ
BLF145
OT123
OT123
711002b
MBB072
4-J11
9-j14
5-j15
transistor tt 2222
TT 2222
enamelled copper wire tables
2222 123 capacitor philips
pu enamelled copper wire
TL 2222
4312 020 36640
ferroxcube wideband hf choke
22 nF, 63
SOT123 Package
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