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    2N3553 Search Results

    2N3553 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N3553 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    2N3553 Philips Semiconductors Silicon Planar Epitaxial Overlay Transistor Original PDF
    2N3553 Philips Semiconductors NPN medium power transistor Original PDF
    2N3553 Philips Semiconductors Silicon Epitaxial Planar Overlay Transistors Original PDF
    2N3553 Semelab NPN Silicon High Frequency Transistor Original PDF
    2N3553 SunLED USA silicon transistors UHF/VHF power transistors Original PDF
    2N3553 Advani-Oerlikon Television / Video Devices Scan PDF
    2N3553 Continental Device India Metal Can and Epoxy Transistors Scan PDF
    2N3553 Ferranti Semiconductors Shortform Data Book 1971 Scan PDF
    2N3553 Ferranti Semiconductors RF Diodes and Transistors 1977 Scan PDF
    2N3553 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    2N3553 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3553 Motorola The European Selection Data Book 1976 Scan PDF
    2N3553 Motorola European Master Selection Guide 1986 Scan PDF
    2N3553 Motorola Power Transistor Selection Guide Scan PDF
    2N3553 Mullard Quick Reference Guide 1977/78 Scan PDF
    2N3553 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3553 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3553 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3553 Unknown Shortform Transistor PDF Datasheet Scan PDF
    SF Impression Pixel

    2N3553 Price and Stock

    Motorola Semiconductor Products 2N3553

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N3553 19
    • 1 -
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    • 100 -
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    • 10000 -
    Get Quote
    Quest Components 2N3553 27
    • 1 $12.6
    • 10 $8.4
    • 100 $8.4
    • 1000 $8.4
    • 10000 $8.4
    Buy Now

    New Jersey Semiconductor Products, Inc. 2N3553

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N3553 7,512 1
    • 1 $13.98
    • 10 $10.485
    • 100 $8.0385
    • 1000 $8.0385
    • 10000 $8.0385
    Buy Now

    . 2N3553

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N3553 19
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    New Jersey Semiconductor Products Inc 2N3553

    Bipolar Junction Transistor, NPN Type, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N3553 6,009
    • 1 $18.64
    • 10 $18.64
    • 100 $18.64
    • 1000 $9.786
    • 10000 $9.786
    Buy Now

    NJS 2N3553

    Bipolar Junction Transistor, NPN Type, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N3553 38
    • 1 $12.6
    • 10 $8.4
    • 100 $7.77
    • 1000 $7.77
    • 10000 $7.77
    Buy Now

    2N3553 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


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    PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    2N4041

    Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
    Text: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108


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    PDF 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4041 2N4127 2N5016 2N5102 2N5108 2N5421

    SRK-2001

    Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
    Text: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108


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    PDF 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 SRK-2001 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 solitron transistors 2N5016

    Untitled

    Abstract: No abstract text available
    Text: 2N3553+JANTX Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)65 I(C) Max. (A)350m Absolute Max. Power Diss. (W)7.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200# I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)30


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    PDF 2N3553 Freq500M

    2N3553 JANTX

    Abstract: No abstract text available
    Text: 2N3553 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)


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    PDF 2N3553 O205AD) 1-Aug-02 2N3553 JANTX

    2N3553

    Abstract: TRANSISTOR 2n3553 inductor 4312 020 36640 MGC929 2N3553 equivalent 2N3553 NPN Planar choke
    Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N3553 Silicon planar epitaxial overlay transistor Product specification Supersedes data of October 1981 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial


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    PDF 2N3553 SC08a 2N3553 O-39/3 MBB199 TRANSISTOR 2n3553 inductor 4312 020 36640 MGC929 2N3553 equivalent 2N3553 NPN Planar choke

    2N3553

    Abstract: 2N3553 equivalent TO39 Package RF POWER TRANSISTOR NPN 7w RF POWER TRANSISTOR NPN 2N3553 NPN npn power amplifier circuit common emitter amplifier transistor 2n3553 4 npn transistor ic
    Text: 2N3553 2N3553 Silicon NPN Transistor RF Power Driver Description: The 2N3553 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as an output, driver, or in predriver


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    PDF 2N3553 2N3553 175MHz, 100mA, 100MHz 100kHz 175MHz 250mA, 20html 2N3553 equivalent TO39 Package RF POWER TRANSISTOR NPN 7w RF POWER TRANSISTOR NPN 2N3553 NPN npn power amplifier circuit common emitter amplifier transistor 2n3553 4 npn transistor ic

    Untitled

    Abstract: No abstract text available
    Text: 2N3553 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)


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    PDF 2N3553 O205AD) 17-Jul-02

    PCR 406 J transistor

    Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
    Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, 2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim


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    PDF MIL-s-19500/341B W0/341A 2N3315, TX2N337S, 2N3553, TX2N3553, TX2N4440 2N3375 gik16wwlhma lns81 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553

    2N3553

    Abstract: 2N3553 NPN 2N3553 datasheet high gain low capacitance NPN transistor
    Text: 2N3553 MECHANICAL DATA Dimensions in mm inches NPN SILICON HIGH FREQUENCY TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. APPLICATIONS 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200)


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    PDF 2N3553 2N3553 205AD) 100kHz 100MHz 2N3553 NPN 2N3553 datasheet high gain low capacitance NPN transistor

    2N3553

    Abstract: DATA TRANSISTOR
    Text: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 65.0 V NO. 2N3553 Voltage, Collector to Emitter (VCE) 40.0 V TYPE NPN-RF Voltage, Emitter to Base (VEBO) 4.0 V empty empty Collector Current (IC) 1.0 A empty empty Base Current (IB)


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    PDF 2N3553 2N3553 DATA TRANSISTOR

    2N3553

    Abstract: 2N3553 NPN 2N3553 equivalent transistor 2n3553
    Text: 2N3553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE TO- 39 MAXIMUM RATINGS IC 1.0 A VCE 40 V PDISS 7.0 W @ TC = 25 C O O O O O TJ -65 C to +200 C


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    PDF 2N3553 2N3553 2N3553 NPN 2N3553 equivalent transistor 2n3553

    multi-emitter transistor

    Abstract: 2NS553 2n3553
    Text: <Se.mi- Conductor ^Products., Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 TYPE 2N3553 VHP Silicon NPN Power Transistor The 2N3553 is a silicon epitaxial planar transistor of NPN structure. This device is intended for large signal,


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    PDF 2N3553 2N3553 400MC) 2NS553 200mA* 250mA 100mA multi-emitter transistor

    2N3553 JANTX

    Abstract: 2N3553 JANTXV 2N3553 JAN
    Text: 2N3553 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)


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    PDF 2N3553 O205AD) 19-Jun-02 2N3553 JANTX 2N3553 JANTXV 2N3553 JAN

    BY1-1F

    Abstract: BAM40 A1512 2N5070 88-108 S100-28 A8012A BY177 S175-50 2N3553 NPN
    Text: VHF- 30-80 MHz Type Polarity 2N5071 A15-12* A80-12* * A80-12A* * NPN NPN NPN NPN V H F -88-108 MHz FM 75 NPN FM 150 NPN VH F 130-175 2N3632 2N3553 B15-12 B30-12 B45-12 BM80-12* * BAM20* BAM40* BAM80* BAM120* MHz NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN


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    PDF S15-28 S30-28 2N5070 S50-28 S100-28 S15-12* S30-12 S50-12* S100-12* S175-28* BY1-1F BAM40 A1512 88-108 A8012A BY177 S175-50 2N3553 NPN

    Untitled

    Abstract: No abstract text available
    Text: m 2N3553 \ \ NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE T O -39 8 .8 9 0 - 9 .398 0.315- 0.335 (8.001- 8 .509) T MAXIMUM RATINGS 1.0 A lc V


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    PDF 2N3553 2N3553

    t 3866 power transistor

    Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
    Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -


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    PDF 2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor

    2N3553

    Abstract: No abstract text available
    Text: 2N3553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE TO- 39 MAXIMUM RATINGS 1.0 A V Ie o m 40 V Pd iss 7.0 W @ Te = 25 OC Tj -65 OC to +200 OC Ts t g


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    PDF 2N3553

    341B

    Abstract: 2N4440 2N3553 2N3375 JAN 2N3375 2N3375 JANTXV 2N3553 JANTX 2N3553 JANTXV
    Text: M I L - S - 19500/3413 A ME N DM EN T 7 AMENDMENT 6 22 A p r il i 983 MILITARY SEMICONDUCTOR SPECIFICATION DEVICE, T R A N S I S T O R , N P N , S I LI CO N. H I G H - F R E O U E N C Y , POWER TYPES 2 N 3 3 7 5 , 2N3553 , AND 2N4440 JAN, J AN T X , AN D J A N T X V


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    PDF MIL-S-19500/3413 2N3375, 2N3553, 2N4440 MIL-S-19500/341B, MIL-S-19500/341B 341B 2N3553 2N3375 JAN 2N3375 2N3375 JANTXV 2N3553 JANTX 2N3553 JANTXV

    2N3553

    Abstract: 2N3375 2N3733 2N 3375
    Text: s 'G S-THOMSON ÜSC D | 7T2TE37 GOQanQ 5 Ì o T ~ ? $ r ? SOLID STATE MICROWAVE 2N 3375 2N 3632 THOMSON-CSF COMPONENTS CORPORATION 2N3553 2N 3733 ‘Montgomeryville, PA 1893Ç • 215 362-8500 ■ TWX 510-661-7299 2.5 W /3.0 W /1 0 W /l 3.5 W, 28 V, DESCRIPTIO N:


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    PDF 7T2TE37 2N3553 2N3733 2N3375 2N3733 2N 3375

    2n3553

    Abstract: 2N3375 2N3632 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
    Text: File No. 386 n n r p /jn RF Power T ran sisto rs UVAUDZ7U 2N 3375 2N 3553 2N 3632 D ivision3*6 40665 RCA 2N3632, 2N3553, 2N3375, 40665 a n d 40666 are e p ita x ia l silico n n-p-n tra n sis to rs of th e “ ov erlay ’* em itter electro d e co n stru ctio n . T hey are intended for u se in


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    PDF 2N3375 2N3553 2N3632 2N3632, 2N3553, 2N3375, and40666 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666

    2N3553

    Abstract: 2N3375 WE VQE 23 F 2n3632 transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E
    Text: 41E D • IPHIN 711Qö2b 00EÖ033 1 2N3375 2N3553 2N3632 PHILIPS INTERNATIONAL T - 3 3 - 0 < ? SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metai envelope with the col lector connected to the case. The 2N3375 and the 2N3632 are n-p-n overlay transistors In T 0 -6 0 metal envelopes with the electrodes


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    PDF 2n3375 2n3553 2n3632 2N3632 T0-60 WE VQE 23 F transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E

    2N3553

    Abstract: 2N3375 2N3632 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor
    Text: b'îE D • bbS3T31 □DE‘ï7bb 3Tb BiAPX 2N3375 2N3553 2N3632 A SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in T 0 -6 0 metal envelopes with the electrodes


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    PDF bbS3T31 2N3375 2N3553 2N3632 2N3553 2N3375 2N3632 T0-60 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor

    2N3553

    Abstract: 2N3553 motorola U028
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3553 2.5 W - 175 MHz HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed for amplifier and oscillator applications in m ilitary and industrial equipment. Suitable for use as output, driver or pre­


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    PDF 2N3553 2N3553 2N3553 motorola U028