4312 020 3664 Search Results

4312 020 3664 Result Highlights (5)

Part	Manufacturer	Description
4312RV-245XGLD	Coilcraft Inc	General Purpose Inductor, 2380uH, 2%, 1 Element, SMD, 4514, ROHS COMPLIANT
4312RV-245XGLB	Coilcraft Inc	General Purpose Inductor, 2380uH, 2%, 1 Element, SMD, 4514, ROHS COMPLIANT
4312RV-404XGLB	Coilcraft Inc	General Purpose Inductor, 400uH, 2%, 1 Element, SMD, 4514, ROHS COMPLIANT
4312RV-725X	Coilcraft Inc	RFID transponder coil, SMT, RoHS
4312RV-725XGL	Coilcraft Inc	RFID transponder coil, SMT, RoHS

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Ferroxcube International Holding BV 431202036643
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Philips Semiconductors WBC2.5/A-3S4 WIDEBAND EMI SUPPRESSION CHOKE (Also Known As: 4312-020-36643)
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YAGEO Corporation WBC2.5/A-3S4 WIDEBAND EMI SUPPRESSION CHOKE (Also Known As: 4312-020-36643)
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4312 020 3664 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2n3866 Abstract: 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427 Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial	Original	2N3866; 2N4427 SC08a O-39/1 2n3866 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427	PDF
BY206 Abstract: blw86 4312 020 36640 HF power amplifier PHILIPS 4312 amplifier Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f.	Original	BLW86 BY206 blw86 4312 020 36640 HF power amplifier PHILIPS 4312 amplifier	PDF
4312 020 36640 Abstract: BLW86 HF power amplifier ferroxcube wideband hf choke PHILIPS 4312 amplifier BY206 BY206 diode SOt123 Package 22 pf trimmer capacitor datasheet 4 carbon wire resistor Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,	Original	BLW86 SC08a 4312 020 36640 BLW86 HF power amplifier ferroxcube wideband hf choke PHILIPS 4312 amplifier BY206 BY206 diode SOt123 Package 22 pf trimmer capacitor datasheet 4 carbon wire resistor	PDF
philips blx15 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b^E ]> • b b S B ' m PDE^S74 bOO « A P X BLX15 _ A H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:	OCR Scan	BLX15 7Z67664 philips blx15	PDF
4312 020 36640 Abstract: ferroxcube wideband hf choke Text: N AMER PHILIPS/DISCRETE bbS3T31 0 0 2 W 0 SS3 I IAPX BLX39 b^E 3> H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is	OCR Scan	bbS3T31 BLX39 juF/10 /zF/35 4312 020 36640 ferroxcube wideband hf choke	PDF
ferroxcube wideband hf choke Abstract: transistor 4312 BLW50F PHILIPS 4312 amplifier 4312 020 36640 Philips SSB vhf linear pulse power amplifier Text: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance	OCR Scan	BLW50F OT123 BLW50F ferroxcube wideband hf choke transistor 4312 PHILIPS 4312 amplifier 4312 020 36640 Philips SSB vhf linear pulse power amplifier	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE bTE APX bb53^31 DOEIMB D ll BLV75/12 T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors for an optimum temperature profile	OCR Scan	BLV75/12 OT-119)	PDF
transistor itt 975 Abstract: BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640 Text: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 002^574 b00 BLX15 IAPX J H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: • rated for 150 W P.E.P. at 1,6 M Hz to 28 MHz	OCR Scan	BLX15 transistor itt 975 BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bbSB'lBl QQE'iBHB 17S • IAPX BLW50F b'JE D H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides	OCR Scan	BLW50F E13S1	PDF
t 3866 power transistor Abstract: transistor 3866 s t 3866 transistor transistor 3866 Text: • bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are prim arily intended fo r class-A, B or C amplifiers, frequency m ultiplier and oscillator circuits.	OCR Scan	bb53131 2N3866 2N4427 t 3866 power transistor transistor 3866 s t 3866 transistor transistor 3866	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is	OCR Scan	BLX95 7Z66943	PDF
2n4427 Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640 Text: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.	OCR Scan	711Dfl2b 00L3b7fl 2N3866 2N4427 2N3866 711002b 00b3bÃ 2n4427 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640	PDF
4312 020 36640 Abstract: ferroxcube wideband hf choke Text: PHILIPS INTERNAT ION AL b5E D 751 I IPHIN Ei 711002b BLV75/12 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile	OCR Scan	711002b BLV75/12 OT-119) 4312 020 36640 ferroxcube wideband hf choke	PDF
PR37 RESISTOR Abstract: PR37 resistors Text: N AUER PHILIPS/DISCRETE b^E » bbS3^31 □□2'ISIS D72 BLW96 IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, A B and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents	OCR Scan	BLW96 PR37 RESISTOR PR37 resistors	PDF

4312 020 36640 Abstract: transistor R1Z BLW97 lt5331 ferroxcube wideband hf choke Text: N AMER PH I L I P S / D I S C R E T E b^E T> • bbSS^! 0aE^S27 ÔTM * A P X BLW97 JL H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed fo r use in class-A, AB and B operated high-power industrial and m ilita ry transm itting equipment in the h.f. band.	OCR Scan	BLW97 OT-121 4312 020 36640 transistor R1Z BLW97 lt5331 ferroxcube wideband hf choke	PDF
2N3927 Abstract: No abstract text available Text: bTE D • 2N3924 2N3926 2N3927 bb53131 0031766 Tb7 « A P X N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N 3 9 24 is an n-p-n overlay transistor in aT O -39 metal envelope with the collector connected to the case. The 2 N 3 9 26 and the 2N 3 9 27 are n-p-n overlay transistors in TO -60 metal envelopes with the emitter	OCR Scan	2N3924 2N3926 2N3927 bb53T31 7Z08I91 7Z08189 7Z08185 2N3927	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.	OCR Scan	bbS3T31 BLU99 BLU99/SL OT122A) BLU99/SL OT122D)	PDF
Untitled Abstract: No abstract text available Text: • Philips Semiconductors bbSB'lBl 0 0 2 ^ 6 M b M T l * A P X Product specification HF power MOS transistor BLF145 N AUER PHILIPS/DISCRETE FEATURES b^E D PIN CONFIGURATION • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch.	OCR Scan	BLF145 bb53T31 002T85M	PDF
itt 2222 Abstract: tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors Text: PhHip^emiconductor^^^ _ bbSBIBl 003G12b TD7 H AP X ^Pjoduc^pecjficatjon UHF power MOS transistor ^ BLF544 N AMER P H I L I P S / D I S C R E T E bTE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures	OCR Scan	003G12b BLF544 OT171 MCA836 itt 2222 tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors	PDF
transistor tt 2222 Abstract: TT 2222 philips metal film resistor BLF543 UBA001 WCA910 capacitor philips 425 stripline multilayer ceramic capacitor philips philips resistor 2322 Text: Philips Sem iconductors [^ 5 3 ^ 3 1 0030115 121 • APX ^ ro d u c ts p e c m Ä BLF543 UHF power MOS transistor b * ìE N AMER P H I L I P S / D I S C R E T E D ' PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability	OCR Scan	bbS3T31 OT171 PINNING-SOT171 BLF543 MCA90E transistor tt 2222 TT 2222 philips metal film resistor BLF543 UBA001 WCA910 capacitor philips 425 stripline multilayer ceramic capacitor philips philips resistor 2322	PDF
Philips polystyrene capacitor Abstract: ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor Text: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear	OCR Scan	OT121B. BLW76 MGP517 Philips polystyrene capacitor ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor	PDF
2n3375 Abstract: 2n3375 transistor 2N3553 Text: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes	OCR Scan	2N3375 2N3553 2N3632 2N3553 The2N3375 2N3375 2N3632 2n3375 transistor	PDF
Untitled Abstract: No abstract text available Text: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features	OCR Scan	D03TD32 BLV38	PDF
PQ-32/MCA908 Abstract: No abstract text available Text: Philips Semiconductors 0030115 121 • A P X ^ S i a S S i S S S t,h 5 3 m UHF power MOS transistor ^ BLF543 N AMER PHILIPS/DISCRETE b^E » ' PIN CONFIGURATION FEATURES • High power gain • Easy power control / -\ • Good thermal stability o • Gold metallization ensures	OCR Scan	BLF543 OT171 D03D125 MCA905 PQ-32/MCA908	PDF

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4312 020 3664 Search Results

4312 020 3664 Result Highlights (5)

4312 020 3664 Price and Stock

Ferroxcube International Holding BV 431202036643

Philips Semiconductors WBC2.5/A-3S4

YAGEO Corporation WBC2.5/A-3S4

Philips Semiconductors 43120203664

4312 020 3664 Datasheets Context Search

2n3866

BY206

4312 020 36640

philips blx15

4312 020 36640

ferroxcube wideband hf choke

Untitled

transistor itt 975

Untitled

t 3866 power transistor

Untitled

2n4427

4312 020 36640

PR37 RESISTOR

4312 020 36640

2N3927

Untitled

Untitled

itt 2222

transistor tt 2222

Philips polystyrene capacitor

2n3375

Untitled

PQ-32/MCA908