J241
Abstract: J239
Text: M3T-42DIP-DMS Converter Board for Connecting 42P4B to 42P2R User's Manual Keep safety first in your circuit designs! • Renesas Technology Corporation and Renesas Solutions Corporation put the maximum effort into making semiconductor products better and more
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M3T-42DIP-DMS
42P4B
42P2R
J2-10
J2-11
J2-12
J2-13
J2-14
J2-15
J2-16
J241
J239
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all ic data
Abstract: No abstract text available
Text: M3T-42DIP-DMS Converter for Connecting 42-pin RSS Type Emulator MCU to M3T-DCT42B-450 or M3T-SSOP42B-450 Function This converter connects a 42-pin 1.778mm-pitch SDIP (42P4B or 42S1B-A) package to the connector provided at the top of the direct dummy IC (M3T-DCT42B-450 or M3T-SSOP42B-450).
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M3T-42DIP-DMS
42-pin
M3T-DCT42B-450
M3T-SSOP42B-450)
778mm-pitch
42P4B
42S1B-A)
M3T-DCT42B-450
all ic data
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14Q7
Abstract: No abstract text available
Text: K3P4C1000D-D G C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access
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K3P4C1000D-D
/512Kx16)
100ns
K3P4C1000D-DC
42-DIP-600
K3P4C1000D-GC
44-SOP-600
K3P4C1000DD
14Q7
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MASK ROM 32M PROGRAM
Abstract: K3N6C4000E-DC mask rom A2034
Text: K3N6C4000E-DC CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 100ns(Max.) : CL=50pF 120ns(Max.) : CL=100pF • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.)
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K3N6C4000E-DC
32M-Bit
2Mx16)
152x16
100ns
120ns
100pF
42-DIP-600
K3N6C4000E-DC
MASK ROM 32M PROGRAM
mask rom
A2034
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Untitled
Abstract: No abstract text available
Text: K3N5V U 1000E-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF
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1000E-D
16M-Bit
/1Mx16)
100ns
120ns
100pF
1000E-DC
42-DIP-600
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A94-10
Abstract: 4000E
Text: K3N6V U 4000E-DC CMOS MASK ROM 32M-Bit (2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/ single +3.3V
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4000E-DC
32M-Bit
2Mx16)
152x16
100ns
120ns
100pF
A94-10
4000E
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Untitled
Abstract: No abstract text available
Text: K3P5C1000D-D G C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access
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K3P5C1000D-D
16M-Bit
/1Mx16)
100ns
150mA
K3P5C1000D-DC
42-DIP-600
K3P5C1000D-GC
44-SOP-600
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lh28f320bjd
Abstract: HI-LO SYSTEMS all11 LH28F320BJD-TTL LRS13A8 minato Model 1890A AF-9706 lh28f128bfht-pw LH28F128BFHED AF9706 AF9723
Text: November/1/2003 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.
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November/1/2003
LH28F008BJ
LH28F008BJT-TTLxx
LH28F008BJT-BTLxx
40TSOP
LHF00L02
LHF00L03
lh28f320bjd
HI-LO SYSTEMS all11
LH28F320BJD-TTL
LRS13A8
minato Model 1890A
AF-9706
lh28f128bfht-pw
LH28F128BFHED
AF9706
AF9723
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16202
Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
Text: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery
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1MX16/2MX8
HY23V16202
HY23V16202
42pin
100/120ns
44TSOP-II
16202
HY23V16202D
HY23V16202S
HY23V16202T
48TSOP
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Untitled
Abstract: No abstract text available
Text: KM23C16005D G CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access
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KM23C16005D
16M-Bit
/1Mx16)
100ns
150mA
KM23C16000D
42-DIP-600
KM23C16005DG
44-SOP-600
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MCHC705B16N
Abstract: MC705P6ACPE MC705P6ACDWE XC705B32CFNE MC68HC705C8ACFNE MC68HC705B16NCFN MC68HC705SR3CP MC705P6ac MC705P6AMDWE MCHC705B16NVFNE
Text: ç Prev Page Next Page è Microcontrollers – 8 and 16 Bit HC705 Family — 8-Bit Features: • 68HC705 CPU with the addition of EPROM memory • Fully static design allowing operation down to DC • 8- bit accumulator • 8-bit index register • 16-bit stack pointer • On-chip oscillator • 16-bit timer with built in prescaler, or 15-bit
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HC705
68HC705
16-bit
15-bit
68-PLCC
MC68HC11F1CFN2-ND
MC68HC11F1CFN3TR-ND
MCHC705B16N
MC705P6ACPE
MC705P6ACDWE
XC705B32CFNE
MC68HC705C8ACFNE
MC68HC705B16NCFN
MC68HC705SR3CP
MC705P6ac
MC705P6AMDWE
MCHC705B16NVFNE
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Untitled
Abstract: No abstract text available
Text: K3N4V U 1000D-D(G)C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.)
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1000D-D
/512Kx16)
100ns
120ns
1000D-DC
42-DIP-600
1000D-GC
44-SOP-600
42-DIP-600
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Untitled
Abstract: No abstract text available
Text: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/40ns(Max.)
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KM23V8105D
/512Kx16)
100/30ns
120/40ns
KM23V8105D
42-DIP-600
KM23V8105DG
44-SOP-600
42-DIP-600)
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Z04B
Abstract: MR27V6441L MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03
Text: OKI Semiconductor MR27V6441L PEDR27V6441L-02-03 Issue Date: April 4, 2005 Preliminary 64M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V6441L is a 64 Mbit Production Programmed Read-Only Memory, which is configured as 67,108,864 word × 1-bit. The MR27V6441L supports a simple read operation using a single 3.3V power supply
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MR27V6441L
PEDR27V6441L-02-03
MR27V6441L
33MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
MR27V6441L-xxxMP
Z04D
48TSOP2
ST03
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U 324 SAMSUNG
Abstract: KM23C8100BG 524288X16
Text: SA MS UN G E L E C T R O N I C S INC b?E D • 7=11,4142 0G17DL.0 ÔT7 SM6K CMOS MASK ROM KM23C81 OOB G 8 M-BH ( 1M X 8 / 5 1 2 K X 16) C M O S M A S K R O M FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode)
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OCR Scan
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KM23C81
0G17DL
8/512K
100ns
42-pin,
44-pin,
KM23C8100B
KM23C8100B)
KM23C8100BG)
U 324 SAMSUNG
KM23C8100BG
524288X16
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LHMN5
Abstract: 48TSOP LH5332600 LH5332600N LH5332600T LH5332C00D TSOP048-P-1218 LH5332500 2sj au LHMV
Text: NBA/ INFORMATION LH5332600 • High-speed 32M-bit Mask-Programmable ROM Pin Connections Description The LH5332600N/T User's No. : LHMN56XX/LHMN5FXX is a CM OS 32M-bit mask-programmable ROM organized as 4 194 304X8 bits (Byte mode) or 2 097 152X 16 bits (Word
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OCR Scan
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LH5332600
32M-bit
LH5332600N/T
LHMN56XX/LHMN5FXX)
32\l-bit
304X8
LH5332600N
44-pin
OP044-P-0600)
LH5332600T
LHMN5
48TSOP
LH5332600
LH5332C00D
TSOP048-P-1218
LH5332500
2sj au
LHMV
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Untitled
Abstract: No abstract text available
Text: KM23C32000A CMOS Ma sk ROM ELECTRONICS 32M-Bit 2M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000A is a fully static mask programmable ROM organized 2,097,152x16bit.lt is fabricated using silicon-gate CMOS process technology.
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OCR Scan
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KM23C32000A
32M-Bit
KM23C32000A
152x16bit
42-DIP
16bit
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC fc.7E D • □ G17 1 1 b b?G KM23C32005 CMOS MASK ROM 32M-Bit 2 M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 x 16 bit organization • Fast access time Random access: 150ns (max.) Page access: 70ns (max.) • Supply voltage: single +5V
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OCR Scan
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KM23C32005
32M-Bit
150ns
100mA
42-pin,
KM23C32005
A3-A20
KM23C32005)
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Untitled
Abstract: No abstract text available
Text: LH53V8000 FEATURES C M O S 8 M 1 M x 8 / 5 1 2 K x 16 3 V - D r iv e M a s k - P r o g r a m m a b le R O M PIN CONNECTIONS • 1,048,576 words x 8 bit organization (Byte mode) 42-PIN DIP TOP VIEW r A-ie C 1« Ai? C 2 524,288 words x 16 bit organization
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OCR Scan
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LH53V8000
42-PIN
48TSOP
48-pin,
42-pin,
600-mil
DIP042-P-0600)
44-pin,
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SO 42 P
Abstract: 28SDIP SHARP 19
Text: P ackage Outline Package Outline Unit : mm 9SIP (Heatsink) SHARP» 12 Package Outline •SHARP 13 Package Outline 22DIP 'SHARP 14 Package Outline DIP 24DIP 24SDIP 13.2±0 25 ® © ® ® 13.2±0 25 3 6 .0 *" 15.24TYP 4.25±OJ25 31.0“ -3 15.24TYP ®
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OCR Scan
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22DIP
24DIP
24SDIP
24TYP
54TYP
62TYP
778TYP
28DIP
28SDIP
24TYP
SO 42 P
28SDIP
SHARP 19
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42-DIP-6Q0
Abstract: No abstract text available
Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CM O S M ASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 1,048,576 x 8(byta mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation: 1Q0ns(Max.) 3.0V operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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OCR Scan
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KM23V8100D
/512Kx16)
120ns
KM23V8100D
42-DIP-6Q0
KM23V8100DG
44-SOP-BOO
KM23V81OODG
D8-D15C2)
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M8512
Abstract: samsung dram AM8512 TSOP 56 Package nand memory
Text: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : • 10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 60ns 70ns 80ns 100ns PACKAGE • 9: X9 •1 6 : X16 •P : DIP • 18: X18 • 32: x32 PROCESS & POWER
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OCR Scan
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100ns
150ns
16Bit
18Bit
M8512
samsung dram
AM8512
TSOP 56 Package nand memory
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x-ray inverter
Abstract: KA2130A KA2103L ka2107 10dip 14-DIP sawtooth generator KA2133 apc inverter circuit 10-SIPH
Text: FUNCTION GUIDE LINEAR ICs 2. VIDEO APPLICATION 1.1 TV Application Applecation Type SIF System KA2101 Sound System Sound Muting Circuit Function Package 14DIP IF amp, IF limiter, IF detector KA2102A 14DIP H/S KA2101 +2.4W audio power amp KA2103L 9SIP Hori sync detector, Integrator, Comparater,
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OCR Scan
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KA2912
KA2915
14DIP
28DIP
KA2101
KA2102A
KA2103L
KA2101
x-ray inverter
KA2130A
ka2107
10dip
14-DIP
sawtooth generator
KA2133
apc inverter circuit
10-SIPH
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23c64000
Abstract: 64M-BIT ROM 2710
Text: CMOS MASK ROM KM23C64000 64M-Bit 4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C64000 is a fully static mask program m able ROM • • • • 4,194,304 x 16 bit organization Fast access tim e : 120ns(Max.) Supply voltage : single +5V
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OCR Scan
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KM23C64000
64M-Bit
4Mx16)
120ns
23C64000
42-DIP-600
23C64000
42-DIP-600)
64M-BIT
ROM 2710
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