U 324 SAMSUNG
Abstract: KM23C8100BG 524288X16
Text: SA MS UN G E L E C T R O N I C S INC b?E D • 7=11,4142 0G17DL.0 ÔT7 SM6K CMOS MASK ROM KM23C81 OOB G 8 M-BH ( 1M X 8 / 5 1 2 K X 16) C M O S M A S K R O M FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode)
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KM23C81
0G17DL
8/512K
100ns
42-pin,
44-pin,
KM23C8100B
KM23C8100B)
KM23C8100BG)
U 324 SAMSUNG
KM23C8100BG
524288X16
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KM23C8100BG
Abstract: No abstract text available
Text: KM23C81 OOB G CMOS MASK ROM 8M-Bit (1M X 8 /5 1 2K X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5V • C urrent consumption
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KM23C81
100ns
50/jA
42-pin,
44-pin,
KM23C8100B
KM23C8100B)
KM23C8100BG)
KM23C8100BG
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 KM23C81 OOA G DülTGSb 37b «SPICK CMOS MASK ROM 8M-Bit (1M X 8 /5 1 2K X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)
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OCR Scan
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KM23C81
150ns
42-pin,
44-pin,
KM23C8100A
D0170b7
KM23C8105B
KM23C8105B)
KM23C8105BG)
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Untitled
Abstract: No abstract text available
Text: K M 2 3 C 8 Î OOB G CMOS Mask ROM ELECTRONICS 8M-Bit ( 1 M X 8/512K x 16) CMOS MASK ROM • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(max.) • Supply voltage : single +5V • Current consumption
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8/512K
100ns
-KM23C8100B
42-DIP-600
KM23C81OOBG
44-SOP-6QO
KM23C8100B
576x8bit
288x16bit
KM23C8100C)
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 'PTbmMS □G170t.G ÔT7 KM23C81 OOB G CMOS MASK ROM 8M-Bit (1M X 8 /5 1 2K X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576x8 (byte mode) 524,288x16 (word mode) • Fast access time: 100ns (max.)
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OCR Scan
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G170t
KM23C81
576x8
288x16
100ns
42-pin,
44-pln,
KM23C8100B
0G170b3
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