KM23V8100D
Abstract: KM23V8100DET KM23V8100DT
Text: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V
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KM23V8100D
/512Kx16)
100ns
120ns
44-TSOP2-400
KM23V8100DET
KM23V8100DT
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KM23V8100D
Abstract: KM23V8100DG
Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V8100D
/512Kx16)
100ns
120ns
KM23V8100D
42-DIP-600
KM23V8100DG
44-SOP-600
KM23V8100DG
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Untitled
Abstract: No abstract text available
Text: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V
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KM23V8100D
/512Kx16)
100ns
120ns
44-TSOP2-400
44-TSOP2-400)
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KM23V8100D
Abstract: KM23V8100DET KM23V8100DT
Text: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V
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KM23V8100D
/512Kx16)
100ns
120ns
44-TSOP2-400
KM23V8100DET
KM23V8100DT
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KM23V8100D
Abstract: KM23V8100DG
Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V8100D
/512Kx16)
100ns
120ns
KM23V8100D
42-DIP-600
KM23V8100DG
44-SOP-600
KM23V8100DG
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42-DIP-6Q0
Abstract: No abstract text available
Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CM O S M ASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 1,048,576 x 8(byta mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation: 1Q0ns(Max.) 3.0V operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V8100D
/512Kx16)
120ns
KM23V8100D
42-DIP-6Q0
KM23V8100DG
44-SOP-BOO
KM23V81OODG
D8-D15C2)
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A18T
Abstract: 23V8100DG
Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V8100D
512Kx16)
100ns
120ns
KM23V8100D
42-DIP-600
23V8100DG
44-SQ
P-600
23V8100D
A18T
23V8100DG
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tl 0741
Abstract: 3.3v 1Mx8 static ram high speed
Text: CMOS MASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES G ENER AL DESCRIPTIO N • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)
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KM23V81
512Kx16)
100ns
120ns
23V8100D
44-TSQ
P2-400
44-TSOP2-400)
tl 0741
3.3v 1Mx8 static ram high speed
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Untitled
Abstract: No abstract text available
Text: Preliminary KM23V81 OOD E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES T he K M 2 3 V 8 1 0 0 D (E )T is a fu lly static m ask p ro gra m m a ble S w itch a b le organ izatio n 1,048,576 x 8 (b yte m ode) 5 24,288 x 1 6(w ord m ode)
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KM23V81
/512Kx16)
100ns
120ns
30/25m
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Untitled
Abstract: No abstract text available
Text: CMOS MASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)
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KM23V81
/512Kx16)
100ns
120ns
23V8100D
44-TSQP2-400
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Untitled
Abstract: No abstract text available
Text: KM23V8100P E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEA TU R ES G EN ERA L DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation: 100ns(Max.) 3.0V operation: 120ns(Max.)
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KM23V8100P
/512Kx16)
100ns
120ns
KM23V81
44-TSQP2-400
KM23V8100D
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Untitled
Abstract: No abstract text available
Text: CMOS MASK ROM KM23V81 OOD G 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)
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KM23V81
/512Kx16)
100ns
120ns
KM23V8100D
42-DIP-600
23V8100DG
44-SQ
P-600
23V8100DG
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Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16
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KM23C4000D
KM23C4100D
KM23C41
KM23V64000T.
KM23V64005AG
KM23V64005ATY.
KM23V64205ASG
KM23SV32205T
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48TSOP1
Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
Text: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15
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512KX8
KM23C400QD
KM23C4QOOD
KM23C4Q00D
KM23C40QQD
TY-10
KM23C4000D
7Y-12
KM23V4000D
48TSOP1
MX* 64M-Bit eprom
TY15
km23c32000cg-10
23v322
KM23C16205BSG-10
7Y12
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