TO247AD
Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
Text: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions
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40N60C
ISOPLUS247TM
247TM
E153432
TO247AD
TO247AD package
40n60c
CoolMOS Power Transistor
ISOPLUS247
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IXGR40N60
Abstract: 40n60 40N60c 40N60CD1 IXGR40N60CD1
Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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ISOPLUS247TM
40N60C
40N60CD1
IC110
E153432
728B1
IXGR40N60
40n60
40N60c
IXGR40N60CD1
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Untitled
Abstract: No abstract text available
Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features
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40N60C
ISOPLUS220TM
E72873
20080523a
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40n60c
Abstract: mosfet 4800 E72873
Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873
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40N60C
ISOPLUS220TM
E72873
20080523a
40n60c
mosfet 4800
E72873
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IXGR40N60C2D1
Abstract: 40n60c2 ixgr 40n60c2d1 40n60c2d1 40n60c ixgr40n60c2 40n60 074K
Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 = = VCE SAT = tfi(typ = VCES IC25 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C
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ISOPLUS247TM
40N60C2
40N60C2D1
247TM
IC110
ID110
40N60C2D1)
IXGR40N60C2D1
40n60c2
ixgr 40n60c2d1
40n60c2d1
40n60c
ixgr40n60c2
40n60
074K
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40n60c2
Abstract: No abstract text available
Text: HiPerFASTTM IGBT C2-Class High Speed IGBTs VCES IC25 VCE sat tfi typ IXGH 40N60C2 IXGT 40N60C2 = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V
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40N60C2
O-268
IC110
O-247
40n60c2
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Untitled
Abstract: No abstract text available
Text: IXSR 40N60CD1 IGBT with Diode ISOPLUS247TM VCES IC25 = 600 = 62 = 2.5 = 70 VCE SAT tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
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ISOPLUS247TM
40N60CD1
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 40N60C2 IXGT 40N60C2 VCES IC25 VCE sat tfi typ = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V
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40N60C2
O-268
IC110
O-247
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40N60C
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 40N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage, MOSFET Symbol Test Conditions Maximum Ratings VDSS = 600 V ID25 = 28 A Ω RDS(on) = 96 mΩ
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ISOPLUS220TM
40N60C
728B1
065B1
123B1
40N60C
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40n60c2d1
Abstract: *40n60c2d1 IXGH40N60C2D1 transistor kf 508 40N60 diode fr 307 40N60C2D
Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IC25 IXGH 40N60C2D1 IXGT 40N60C2D1 IXGJ 40N60C2D1 = 600 V = 75 A = 2.5 V = 32 ns VCE SAT tfi(typ) C2-Class High Speed IGBTs TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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40N60C2D1
O-247
IC110
40n60c2d1
*40n60c2d1
IXGH40N60C2D1
transistor kf 508
40N60
diode fr 307
40N60C2D
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Untitled
Abstract: No abstract text available
Text: CoolMOSTM Power MOSFET IXKC 40N60C in ISOPLUS220TM Package Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 600 V ID25 = 24 A Ω RDS(on) = 96 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings
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40N60C
ISOPLUS220TM
E153432
405B2
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IXGR40N60C2D1
Abstract: 40N60C2 40N60c2d1 ixgr 40N60c2d1
Text: Advance Technical Data IXGR 40N60C2 IXGR 40N60C2D1 HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 = 600 V = 60 A = 2.7 V = 32 ns VCE SAT tfi(typ) Lightspeed 2TM Series (Electrically Isolated Back Surface) PLUS 247TM (IXFX) IXGR_C2 IXGR_C2D1 Symbol Test Conditions
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40N60C2
40N60C2D1
ISOPLUS247TM
247TM
728B1
123B1
728B1
065B1
IXGR40N60C2D1
40N60C2
40N60c2d1
ixgr 40N60c2d1
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B
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40N60C
OT-227
E72873
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fast diode SOT-227
Abstract: 40N60C E72873 MOSFET 031
Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A 70 mW N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B E72873
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40N60C
OT-227
E72873
Mounti193
fast diode SOT-227
40N60C
E72873
MOSFET 031
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40N60C
Abstract: CoolMOS E72873 Ixkn 40n60 E72873 SOT-227
Text: IXKN 40N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ D G S S miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C
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40N60C
OT-227
E72873
40N60C
CoolMOS
E72873
Ixkn
40n60
E72873 SOT-227
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40N60CD1
Abstract: PLUS247 IXSR40N60CD1 RG70 40N60C
Text: IXSR 40N60CD1 IGBT with Diode ISOPLUS247TM VCES IC25 = 600 = 62 = 2.5 = 70 VCE SAT tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
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40N60CD1
ISOPLUS247TM
40N60CD1
PLUS247
IXSR40N60CD1
RG70
40N60C
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Untitled
Abstract: No abstract text available
Text: IXKC 40N60C COOLMOS * Power MOSFET VDSS = 600 V ID25 = 28 A RDS on max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features
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40N60C
ISOPLUS220TM
E72873
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40N60C
Abstract: No abstract text available
Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A 70 mW N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B E72873
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40N60C
OT-227
E72873
40N60C
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Untitled
Abstract: No abstract text available
Text: IXKR 40N60C COOLMOS * Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base D VDSS ID25 RDS on 600 V 38 A 70 mΩ Ω ISOPLUS 247TM E153432 G G D Preliminary data S S G = Gate Conditions
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40N60C
ISOPLUS247TM
247TM
E153432
ISOPLUS247
O-247
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Untitled
Abstract: No abstract text available
Text: IXKN 40N60C COOLMOS * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ D G S S miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C
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40N60C
OT-227
E72873
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Untitled
Abstract: No abstract text available
Text: IXKC 40N60C CoolMOS Power MOSFET VDSS = 600 V ID25 = 28 A RDS on max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features
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40N60C
ISOPLUS220TM
E72873
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20n60c
Abstract: 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c
Text: Product Change Notice PCN No.: 05-03 Customer: All IXYS product type: CoolMOS products in 600V: IXKC 20N60C, IXKC 40N60C IXKR 40N60C IXKF 40N60SCD1 IXKN 40N60C, IXKN 75N60C Description of change: CoolMOS die type C2 will be replaced by C3 Reason for change:
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20N60C,
40N60C
40N60SCD1
40N60C,
75N60C
14F12
20n60c
40n60c
40n60
40N60SCD1
75n60
CoolMOS
IXYS DATE CODE
Ixkn
D-68623
IXKC 20n60c
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75n60
Abstract: 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c
Text: CoolMOS Power MOSFET Contents VDSS max V ID25 TC = 25 °C A RDS on 600 40 70 40 70 75 35 ISOPLUS247TM miniBLOC Page mΩ Ω IXKN 40N60C C5-2 IXKR 40N60 IXKN 75N60 C5-4 C5-6 CoolMOS is a trademark ofInfineon Technologies AG. 2000 IXYS All rights reserved
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ISOPLUS247TM
40N60C
40N60
75N60
OT-227
E72873
75n60
40n60
40n60 transistor
IXKR
40N60C
E72873
ISOPLUS247
lID25
Ixkn
ixkr 40n60c
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Untitled
Abstract: No abstract text available
Text: □ IX Y S Advanced Technical Information IXSK 40N60CD1 IXSX 40N60CD1 IGBT with Diode PLUS247 package ^fi typ V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads
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40N60CD1
PLUS247â
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