gm76c88
Abstract: GoldStar GoldStar gm76c88 CS13 GM76C88-10 GM76C88-70 GM76C88-85 cs1030
Text: GOLDSTAR TECHNO LOG Y INC/ SIE D 402fl757 D 0 D 2 S n 3 PRODUCT SPECIFICATION GM76C88 G o ld S ta r GOLD STAR CO., LTD. 8,192 X 8 BIT STATIC RAM T - H Description Pin Configuration The GM76C88 is 65,536 bit staic random access memory organized as 8,192 words by 8 bits using CMOS
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402fl757
GM76C88
GM76C88
70/85/100ns.
192x8
T-90-20
GoldStar
GoldStar gm76c88
CS13
GM76C88-10
GM76C88-70
GM76C88-85
cs1030
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Untitled
Abstract: No abstract text available
Text: Low Distortion Current Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • SLEW RATE: 2500V/US • VERY LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.008%/0.009° • LOW DISTORTION AT 5MHz: -85dBc • HIGH BANDWIDTH: 500MHz • CLEAN PULSE RESPONSE • HIGH OPEN LOOP TRANSIMPEDANCE:
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500V/US
-85dBc
500MHz
OPA644
16-bits
DAC650.
17313LS
DAC600.
402fl
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GM71C4100CJ
Abstract: GM7IC gm71c4100
Text: @ LG Semicon. Co. LTD. Description Features The GM71C4100C/CL is the new generation dynam ic RAM organized 4,194,304 x 1 bit. GM71C4100C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS p ro cess te c h n o lo g y . The
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GM71C4100C/CL
300mil
20pin
400mil
GM71C4100CJ
GM7IC
gm71c4100
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IN4010
Abstract: No abstract text available
Text: LG Semicon. Co. LTD Description Features The GMM781000ENS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400EJ, 1M x4 sealed in 20 pin SOJ package. The GMM781000ENS is a socket type memory module, suitable for easy change or addition
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GMM781000ENS
GM71C4400EJ,
GMM781000ENS
GM71C4400EJ
781000ENS-60
781000ENS-70
781000ENS-80
IN4010
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4023 Ci
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Pin Configuration 36 DIP The GM23C64001 high performance read only memory is organised as 8,388,606 x 8 bits and has an access time of 120ns. It needs no external control clock to assure simple operation, because of its
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GM23C64001
120ns.
40HB757
A0-A21
402fl7S?
4023 Ci
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Untitled
Abstract: No abstract text available
Text: LG Semicon. Co. LTD. Description Features The GMM7408200AS/SG is an 8M x 40 bits dynamic RAM MODULE which is assembled 20 pieces of 4M x 4 bit DRAMs in 24 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7408200AS/SG is optimized for
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GMM7408200AS/SG
GMM7408200AS
GMM7408200ASG
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M7810
Abstract: DNS-80 GM71C4
Text: LG Semicon. Co. LTD. Description Features The GMM781000DNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400DJ, 1M x4 sealed in 20 pin SOJ package. The GMM781000DNS is a socket type memory module, suitable for easy change or addition
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GMM781000DNS
GM71C4400DJ,
GMM781000DNS
GM71C4400DJ
GMM781000DNS-60
781000DNS-70
M781000DNS-80
M7810
DNS-80
GM71C4
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Untitled
Abstract: No abstract text available
Text: W» LG Semicon. Co. LTD Description Pin Configuration The GM23C8100A high performance read only memory is organized as 1,048,576 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The GM23C8100A offers automatic power down controlled by
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GM23C8100A
wjA15
402fl757
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71C4400Bj
Abstract: No abstract text available
Text: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 71C4400BJ, 1M x 4 sealed in 2 pin
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GMM781000BN
S-60/70/80
781000BN
71C4400BJ,
4400BJ
0003fl2fl
GMM781000BNS
M0267S7
71C4400Bj
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GM71C4256B
Abstract: MQ5A
Text: @ LG Semicon. Co. LTD._ Description Features The GM71C4256B/BL is the new generation dynamic RAM organized 262,144 x 4 bit. GM71C4256B/BL has realized higher density, higher performance and various functions fay utilizing advanced CMOS process technology.
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GM71C4256B/BL
00DS304
MQ5A757
000530b
GM71C4256B
MQ5A
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GM76C256cll
Abstract: No abstract text available
Text: @ LG Semicon. Co., LTD Pin Configuration Description The GM76C256C is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. U sing a 0.8am advanced CMOS technology, it provides high speed operation with minimum cycle time o f 55/70/85ns. The device is placed in a low
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GM76C256C
55/70/85ns.
GM76C256CL/CLL
28-pin
600mil)
450mil)
55/70/85ns
55mWMax.
050ri
GDDLD30
GM76C256cll
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MSM 7627
Abstract: GM71C16100CJ6 GM71C
Text: G M 7 1C 1 6 1 00 C 16,777,216 WORDS x 1 BIT CMOS DYNAMIC RAM LG S e m i c o n C o .,L td . Description Features The GM71C16100C is the new generation dynamic RAM organized 16,777,216 x 1 Bit. GM71C16100C has realized higher density, higher performance and various functions by
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GM71C16100C
0DG77Dfi
MSM 7627
GM71C16100CJ6
GM71C
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GM71V S 16163B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)16163B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The
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GM71V
16163B/BL
42pin
400mil
00057S2
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Untitled
Abstract: No abstract text available
Text: GOLDSTAR TECHNOLOGY IN C / 47E ]> • 402Ô7S7 GoldStar 1 «GST 0003433 TWé-23-/5 G M 7 1 C 4 1 0 0 A /A L 4,194,304 WORDSxl BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy namic RAM organized 4,194,304 x 1 Bit. GM71C4100A/AL has realized higher density, higher per
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GM71C4100A/AL
300-mil
20-pin
400-mil
05A7S7
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Untitled
Abstract: No abstract text available
Text: G M 82C 650 GoldStar GOLDSTAR ELECTRON CO ,LTD GoldStar Sound Generator 1. G eneral Description The GM82C650 is a high performance digital sound generator, which is applicable for many musical applications like PC sound card, sound module, karaoke, keyboard,and
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GM82C650
20bits
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GL393
Abstract: GL-393 GL339 GL-393-A 12N2222 GL393A transistor k 4212 GL339A 1N914 wv1 transistor
Text: GL339/339A LOW POWER, LOW OFFSET VOLTAGE QUAD COMPARATORS Description Pin Configuration The GL339 consists of four independent precision voltage com parators designed specifically to operate from a single power supply Operation from split power supplies is also possible and
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GL339/339A
GL339
10-Comparator
GL393
0004b03
GL393
GL-393
GL-393-A
12N2222
GL393A
transistor k 4212
GL339A
1N914
wv1 transistor
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73DC
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7408100AS/SG is an 8M x 40 bits dynamic RAM MODULE which is assembled 20 pieces of 4M x 4 bit DRAMs in 24 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7408100AS/SG is optimized for
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GMM7408100AS/SG
GMM7408100AS
GMM7408100ASG
GMM740810
G007313
73DC
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7401010ES/SG is an lM x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 10 pieces o f 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both side the printed circuit board with decoupling capacitors. The G M M 7401010ES/SG is
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GMM7401010ES/SG
7401010ES/SG
GMM7401010ES/SG
GMM740101OES
GMM740101OESG
1111111111111111111111111ii
1111im
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co., LTD._ Description Features The GMM7361000DS/SG is a 1M x 36 bits Dynamic RAM MODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package and 4 pieces of 1M x 1bit DRAMs in 20/26 pin SOJ package on both sides the
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GMM7361000DS/SG
7361000DS/SG
11111111111IIH
000bfl41
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GMM7321200ANS/SG is an 1M x 32 bits Dynamic RAM MODULE w hich is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7321200ANS/SG is
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GMM7321200ANS/SG
16bit
GMM7321200ANS/SG
GMM7321200ANS
GMM7321200ANSG
11111111111111111111111111ii
000b3fc
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GD4053B
Abstract: GD4053 GD405
Text: GD4053B TRIPLE 2-CHANNEL ANALOG MULTIPLEXER/DEMULTIPLEXER D E S C R IP TIO N ^— The 405 3B is a T rip le 2-Channel A nalog M u ltip le x e r/D e m u ltip le x e r w ith a com m o n Enable In p u t E . Each M u ltip le x e r/D e m u ltip le x e r has tw o in depend ent In p u ts /O u tp u ts ( Y q .Y*), a
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GD4053B
GD4053B
GD4053
GD405
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Pin Configuration 24 26 SOJ The GM71C16100A is the new generation dynamic RAM organized 16,777,216 x 1 Bit. GM71C16100A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C16100A offers Fast
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GM71C16100A
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Untitled
Abstract: No abstract text available
Text: OPA65Q B U R R - BROW N Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • LOW POWER: 50mW The OPA650 is a low power, wideband voltage feed back operational amplifier. It features a high band width of 560MHz as well as a 12-bit settling time of
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OPA65Q
OPA650
560MHz
12-bit
560MHz
-77dBc
ZZ182
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keypad pin diagram
Abstract: M6033 buzzer pulsed tone 5v GoldStar 10KO GIV36390 GM6390 T-15 KEYPAD SWITCH debounce DTMF keypad with encoder
Text: GOLDSTAR TECHNOLOGY INC/ B1E D m 4 0 2 6 7 5 7 DDOBOflS b • _ -r -iz -c n -c n GM6390 TONE/PULSE SWITCHABLE DIALER W ITH REDIAL Description Pin Connection The GM6390 is a monolithic, integrated circuit manufactured
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GM6390
GM6390
keypad pin diagram
M6033
buzzer pulsed tone 5v
GoldStar
10KO
GIV36390
T-15
KEYPAD SWITCH debounce
DTMF keypad with encoder
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