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    HY628400LLG-I

    Abstract: DV06 138-884
    Text: HY628400-I Series «HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628400-I 512Kx 1DE02-11-MAY95 HY628400LP-I HY628400LLP-I HY628400LG-I HY628400LLG-I DV06 138-884

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    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Features The GMM7321200ANS/SG is an 1M x 32 bits Dynamic RAM MODULE w hich is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7321200ANS/SG is


    OCR Scan     		PDF GMM7321200ANS/SG 16bit GMM7321200ANS/SG GMM7321200ANS GMM7321200ANSG 11111111111111111111111111ii 000b3fc