Untitled
Abstract: No abstract text available
Text: Rev. 0. G M M 7 3 21000B S /B S G -60/70/80 G oldStar 1 ,0 4 8 ,5 7 6 W O R D S x 3 2 B IT G M M 7322000B S /B S G 6 0 /7 0 /8 0 GOLDSTAR ELECTRON CO., LTD. 2 ,0 9 7 ,1 5 2 W O R D S x 3 2 BIT CMOS D YN AM IC RAM M O D U LE Description Features The GM M 7321000BS/BSG is a iM x 3 2 bits dy
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21000B
7322000B
7321000BS/BSG
7322000BS/BSG
000DQ
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7402010CS/SG is an 1M x 40 bits D y n am ic RA M M O D U LE w h ich is assembled 20 pieces of 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7402010CS/SG is
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GMM7402010CS/SG
GMM7402010CS/SG
GMM74020IOCS
GMM7402010CSG
11111111111111111111111111111111111ir
072bS
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gm71c4400b
Abstract: No abstract text available
Text: GM71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d
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GM71C4400B/BL
GMM71C4100BR/BLR
GM71C4400BT/BLT
031MIN
gm71c4400b
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74HC74
Abstract: 74hct74 74LS74 pinout 74HC74 pin configuration 74hc74 pin diagram TTL 74hc74 74ls74 timing setup hold Current 74HCT74 QQ042 000M2AA
Text: GD54/74HC74, GD54/74HCT74 DUAL D-TYPE FLIP-FLOPS WITH PRESET & CLEAR G e n era l D escrip tio n These devices are identical in pinout to the 5 4 /7 4 L S 7 4 . They consist of two D-type flip-flops with individual preset, clear, and clock inputs. Infor Pin C o n fig u ra tio n
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GD54/74HC74,
GD54/74HCT74
54/74LS74.
00042T1
402A757
DQ042T2
74HC74
74hct74
74LS74 pinout
74HC74 pin configuration
74hc74 pin diagram
TTL 74hc74
74ls74 timing setup hold
Current 74HCT74
QQ042
000M2AA
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ic ns 4263
Abstract: No abstract text available
Text: GM71C4263C GM71CS4263CL LG S e m ic o r t C o .,L td . 262,144 WORDS x 16 BIT CMOS DYNAMIC RAM # Description Features The GM71C S 4263C/CL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C (S)4263 C/CL has realized higher density, higher performance and various
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GM71C4263C
GM71CS4263CL
GM71C
4263C/CL
GM71C
0D07bStl
ic ns 4263
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Features Description The GMM7322200BNS/SG is an 2M x 32 bits Dynamic RAM MODULE which is assembled 4 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board w ith decoupling capacitors. The GMM7322200BNS/SG is
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GMM7322200BNS/SG
16bit
GMM7322200BNS/SG
GMM7322200BNS
GMM7322200BNSG
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22p capacitor
Abstract: No abstract text available
Text: @ LG Semicon. Co., LTD. Description Features The GMM7364100BNS/SG is a 4M x 36 bits Dynamic RAM MODULE which is assembled 8 pieces of 4M x 4bit DRAMs in 24/26 pin SOJ package and 4 pieces of 4M x lbit DRAMs in 20/26 pin SOJ package on both sides the p rin te d c irc u it b o a rd w ith d e c o u p lin g
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GMM7364100BNS/SG
7364100BNS/SG
GMM7364100BNS
plat33
22p capacitor
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Untitled
Abstract: No abstract text available
Text: I» LG Semicon. Co. LTD Description Features The GMM7401000DS/SG is an 1M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 10 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on single side the p rin te d c irc u it board w ith d e co u p lin g
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GMM7401000DS/SG
7401000DS/SG
GMM7401000DS/SG
GMM7401000DS
GMM7401000DSG
100f2
402A757
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM791000ENS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400EJ, 1M x4 sealed in 20 pin SOJ package and lM xl D R A M in 20 pin SO J p a ck a g e . The GMM791000ENS is a socket type memory
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GMM791000ENS
GM71C4400EJ,
GMM791000ENS-60
GMM791000ENS-70
GMM791000ENS-80
000757S
00D757ti
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7408210BS/SG is an 8M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces o f 4M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GM M 7408210BS/SG is
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GMM7408210BS/SG
7408210BS/SG
GMM7408210BS/SG
GMM7408210BS
GMM7408210BSG
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IC 4093B
Abstract: 4093B GD4093B AX48 GD4093
Text: GD4093B QUAD 2-INPUT NAND SCHMITT TRIGGER GENERAL DESCRIPTION—The 4093B is a Quad 2-Input NAND Schmitt Trigger offering positive and negative threshold voltages, Vt+ and V t - which show very low variation with temperature typically 0.0005 V/°C at Vdd - 10 V and typical
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GD4093B
4093B
IC 4093B
GD4093B
AX48
GD4093
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PDF
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7401000BS/SG is an lM x 40 bits Dynamic RAM MODULE which is assembled 10 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on single side the printed circuit board with decoupling capacitors. The GMM7401000BS/SG is
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GMM7401000BS/SG
GMM7401000BS
GMM7401000BSG
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PDF
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Untitled
Abstract: No abstract text available
Text: LG Semicon. Co. LTD. Description Features The GMM7408200AS/SG is an 8M x 40 bits dynamic RAM MODULE which is assembled 20 pieces of 4M x 4 bit DRAMs in 24 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7408200AS/SG is optimized for
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GMM7408200AS/SG
GMM7408200AS
GMM7408200ASG
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M7810
Abstract: DNS-80 GM71C4
Text: LG Semicon. Co. LTD. Description Features The GMM781000DNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400DJ, 1M x4 sealed in 20 pin SOJ package. The GMM781000DNS is a socket type memory module, suitable for easy change or addition
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GMM781000DNS
GM71C4400DJ,
GMM781000DNS
GM71C4400DJ
GMM781000DNS-60
781000DNS-70
M781000DNS-80
M7810
DNS-80
GM71C4
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Untitled
Abstract: No abstract text available
Text: @ LG Semlcon. Co., LTD. Description Features The GMM7362000CS/SG is a 2M x 36 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package, and 8 pieces of 1M x 1 bit DRAMs on the printed circuit board with decoupling capacitors. The
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GMM7362000CS/SG
7362000C
GMM7362000CS/SG
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GM 71V S 17800B/BL is the new generation dynamic R A M organized 2,097,152 w ords x 8 bit. G M 71V (S)17800B/BL has realized higher density, higher perform ance and various functions by utilizing a d v a n c e d C M O S p ro c e s s te c h n o lo g y . T he
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17800B/BL
28pin
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PDF
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346h
Abstract: 34DH gm82c gm82c700 i80x86 GM82 82c700
Text: @ LG Semicon. Co. LTD. GM 82C700 FAST SCSI-2 HOST ADAPTER CHAPTER 1. OVERVIEW This section describes abstracted information of the GM82C700. 1.1 GENERAL DESCRIPTION The GM82C700 is a single chip SCSI host adap ter that is applied to peripheral devices controlled
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82C700
GM82C700.
GM82C700
80-pin
68-pin
402A757
346h
34DH
gm82c
i80x86
GM82
82c700
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K250 capacitor
Abstract: DNR2
Text: @ LG Semicon. Co. LTD. Features Description The GMM7322010ES/SG is a 2M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces o f 1M x 4bit EDO DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The G M M 7322010ES/SG is
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GMM7322010ES/SG
7322010ES/SG
GMM7322010ES/SG
GMM7322010ES
GMM7322010ESG
D0Qb40^
K250 capacitor
DNR2
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PDF
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Untitled
Abstract: No abstract text available
Text: Rev 0. GoldStar GOLDSTAR ELECTRON CO, LTD. G M M 7 3 2 4 0 0 0 B S /B S G - 6 0 /7 0 /8 0 4,194,304 WORDS x 32 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM7324000BS/BSG is a 4M x32 Bits dy namic RAM MODULE which is assembled 36 pieces of 4Mx 1 bit DRAMs in 20/26 pin SOJ pack
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GMM7324000BS/BSG
M7324000BS/BSG
402A757
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PDF
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40267
Abstract: GM71C18163AJ-6 os 910 Edd 44 GM71 GM71C GM71C18163AJ-7 GM71C18163AJ-8 gm71c18163
Text: @ LG Semicon. Co. LTD Description Features The GM71C S 18163B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71C(S)18163B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The
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18163B/BL
GM71C
42pin
400mil
40267
GM71C18163AJ-6
os 910
Edd 44
GM71
GM71C18163AJ-7
GM71C18163AJ-8
gm71c18163
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PDF
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GM71C S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)16160B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo gy. The
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GM71C
16160B/BL
42SOJ
GGQ4C544
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PDF
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GM71C17403b
Abstract: GM71C17403BJ GM71C17403
Text: @ LG Semicon. Co. LTD. Features Description The GM71C17403B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71C17403B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The
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OCR Scan
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GM71C17403B/BL
300mil
GM71C17403b
GM71C17403BJ
GM71C17403
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PDF
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MSM 7627
Abstract: GM71C16100CJ6 GM71C
Text: G M 7 1C 1 6 1 00 C 16,777,216 WORDS x 1 BIT CMOS DYNAMIC RAM LG S e m i c o n C o .,L td . Description Features The GM71C16100C is the new generation dynamic RAM organized 16,777,216 x 1 Bit. GM71C16100C has realized higher density, higher performance and various functions by
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GM71C16100C
0DG77Dfi
MSM 7627
GM71C16100CJ6
GM71C
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GM71CI7400
Abstract: 402u gm71c17400bj GM71C17400 17400BJ gm71c17400b
Text: @ LG Semicon. Co. LTD Description Features The GM71C17400B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. GM71C17400B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The GM71C17400B/BL offers Fast
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GM71C17400B/BL
Cl7400B/BL
300mil
DDD5D42
GM71CI7400
402u
gm71c17400bj
GM71C17400
17400BJ
gm71c17400b
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PDF
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