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    3JA1 Search Results

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    3JA1 Price and Stock

    Murata Manufacturing Co Ltd GCM21B5C1K223JA16L

    CAP CER 0.022UF 80V C0G/NP0 0805
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    DigiKey GCM21B5C1K223JA16L Reel 3,000 3,000
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    Avnet Americas GCM21B5C1K223JA16L Reel 14 Weeks 3,000
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    • 10000 $0.06889
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    Avnet Abacus GCM21B5C1K223JA16L 19 Weeks 3,000
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    Vishay Beyschlag PR02000202003JA100

    RES 200K OHM 5% 2W AXIAL
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    DigiKey PR02000202003JA100 Ammo Pack 2,000 1,000
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    • 1000 $0.06475
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    PR02000202003JA100 Cut Tape 1,561 1
    • 1 $0.33
    • 10 $0.241
    • 100 $0.1011
    • 1000 $0.07724
    • 10000 $0.07724
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    Murata Manufacturing Co Ltd GCM31C5C1H683JA16L

    CAP CER 0.068UF 50V C0G/NP0 1206
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    DigiKey GCM31C5C1H683JA16L Reel 2,000 2,000
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    GCM31C5C1H683JA16L Cut Tape 1,217 1
    • 1 $0.52
    • 10 $0.349
    • 100 $0.2294
    • 1000 $0.15234
    • 10000 $0.15234
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    Vishay Beyschlag VR25000006803JA100

    RES 680K OHM 5% 1/4W AXIAL
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    DigiKey VR25000006803JA100 Ammo Pack 2,000 1,000
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    • 1000 $0.05599
    • 10000 $0.05206
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    Murata Manufacturing Co Ltd GCM3195C1H393JA16D

    CAP CER 0.039UF 50V C0G/NP0 1206
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    DigiKey GCM3195C1H393JA16D Cut Tape 1,237 1
    • 1 $0.45
    • 10 $0.297
    • 100 $0.1782
    • 1000 $0.11879
    • 10000 $0.11879
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    Avnet Americas GCM3195C1H393JA16D Reel 14 Weeks 4,000
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    • 10000 $0.10076
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    3JA1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: ,ï l l u n , . HY5141OOA Series >79 I U N U n I 4M x 1-blt CMOS DRAM DESCRIPTION The HY5141 OOA is the 2nd generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY5141 OOA utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    PDF HY5141OOA HY5141 HY51410QA such1380 1AC06-30-MAY94 HY514100A HY514100AJ HY514100AU HY514100AT

    A13CH

    Abstract: km6810008 A12CZ KM681000BLI km6810008l
    Text: CMOS SRAM KM681000BLI / BLI-L 128Kx8 Bit Industrial Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • Industrial Tem perature R ange : -40 to 8 5°C • Fast Access Tim e : 7 0 ,1 0 0 ns M ax. • Low Pow er Dissipation Standby (C M O S ) : 5 5 0 pW (M ax.)L -V er.


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    PDF KM681000BLI 128Kx8 550pW 385mW KM681000BLGI/BLG 32pin 525mil) KM681000BLTI/BLTI-L 0820F) A13CH km6810008 A12CZ km6810008l

    3JA1

    Abstract: No abstract text available
    Text: KM41C4002B CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4002B is a CMOS high speed 4,194,304 x 1 Dynamic Random Access Memory, Its de­ sign is op tim ized fo r high pe rform ance ap p lica tio n s


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    PDF KM41C4002B KM41C4002B-6 KM41C4002B-7 KM41C4002B-8 110ns 130ns 150ns KM41C4002B 3JA1