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    39S16400 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    smd marking m11

    Abstract: M6 SMD MARKING CODE
    Text: 16 MBit Synchronous DRAM HYB 39S16400/800/160CT-8/-10 • High Performance: -8 -10 Units 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns fCK MAX. • Multiple Burst Read with Single Write Operation • Automatic and Controlled Precharge Command


    Original     		39S16400/800/160CT-8/-10 cycles/64 P-TSOPI-44 400mil P-TSOPII-50 PC100 P-TSOPII-50 GPX05956 smd marking m11 M6 SMD MARKING CODE PDF

    39S16400

    Abstract: SPT03812 CS 213 dax6 dbx5
    Text: HYB 39S16400/800/160CT-8/-10 16 MBit Synchronous DRAM Timing Diagrams 1 Bank Activate Command Cycle 2 Burst Read Operation 3 Read Interrupted by a Read 4 4.1 4.2 4.3 Read to Write Interval Read to Write Interval Minimum Read to Write Interval Non-Minimum Read to Write Interval


    Original     		39S16400/800/160CT-8/-10 39S16400 SPT03812 CS 213 dax6 dbx5 PDF

    39S16800AT-8

    Abstract: smd marking m11 Q67100-Q1323 Q67100-Q1333 Q67100-Q1335 39S16800T 39S16800AT-10 smd marking code M11 smd code m6
    Text: 16 MBit Synchronous DRAM second generation HYB 39S16400/800/160AT-8/-10 Advanced Information • High Performance: CAS latency = 3 • Multiple Burst Read with Single Write Operation -8 -10 Units fCK 125 100 MHz • Automatic and Controlled Precharge Command


    Original     		39S16400/800/160AT-8/-10 cycles/64 P-TSOPII-50 GPX05956 39S16800AT-8 smd marking m11 Q67100-Q1323 Q67100-Q1333 Q67100-Q1335 39S16800T 39S16800AT-10 smd marking code M11 smd code m6 PDF

    39S16802AT-10

    Abstract: Q67100-Q1279 marking t8 smd CAY Q67100-Q1323 Q67100-Q1327 Q67100-Q1333 Q67100-Q1335 P-TSOPII-44 BX-4T
    Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Multiple Burst Read with Single Write Operation


    Original     		HYB39S1640x/80x/16xAT-8/-10 16MBit 39S16802AT-10 Q67100-Q1279 marking t8 smd CAY Q67100-Q1323 Q67100-Q1327 Q67100-Q1333 Q67100-Q1335 P-TSOPII-44 BX-4T PDF

    9633E

    Abstract: 3107E-01 3520E-11 805E-01 853e HYB39S64800T max 8734E 1600E-03 SIEMEMS transistor 702E
    Text: INFORMATION NOTE IBIS MODELS FOR SIEMENS DRAM and SDRAMs 9.96 InfIBIS.DOC IBIS MODELS I/O-Buffer Information Specification IBIS Behavioral IBIS is an emerging standard for electronic behavioral specifications of digital integrated circuit input/output (I/O) analog characteristics. IBIS


    Original     		982e-01 814e-01 677e-01 602e-01 570e-01 640e-01 828e-01 126e-01 528e-01 027e-01 9633E 3107E-01 3520E-11 805E-01 853e HYB39S64800T max 8734E 1600E-03 SIEMEMS transistor 702E PDF

    hyb39s16

    Abstract: marking smd wmf CAY smd marking code
    Text: 39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Single Pulsed RAS Interface • Fully Synchronous to Positive Clock Edge


    Original     		HYB39S16400/800/160BT-8/-10 16MBit P-TSOPI-44 400mil PC100 hyb39s16 marking smd wmf CAY smd marking code PDF

    P-TSOPII-44

    Abstract: CAZ MARKING AZ2 marking
    Text: 39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 13.3 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge •


    Original     		HYB39S16400/800/160BT-8/-10 16MBit P-TSOPI-44 400mil PC100 P-TSOPII-44 CAZ MARKING AZ2 marking PDF

    FCK2A

    Abstract: No abstract text available
    Text: SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 /cK MAX • HYB 39S16400/800/160CT-8/-10 125 • -10 Units • Automatic and Controlled Precharge Command 100 MHz ?CK3 8 10 !AC3 6 ?CK2 10 12 ns ?AC2 6 8 ns 7 Multiple Burst Read with Single Write


    OCR Scan     		39S16400/800/160CT-8/-10 cycles/64 fl235b05 FCK2A PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 16 MBit Synchronous DRAM second generation HYB 39S16400/800/160AT-8/-10 Advanced Information • High Performance: CAS latency = 3 Multiple Burst Read with Single Write Operation -8 -10 Units 125 100 MHz Automatic and Controlled Precharge Command


    OCR Scan     		39S16400/800/160AT-8/-10 cycles/64 PDF

    39S16800AT-8

    Abstract: 39S16800AT-10
    Text: SIEMENS 16 MBit Synchronous DRAM second generation HYB 39S16400/800/160AT-8/-10 Advanced Information High Performance: -8 -10 Units /CK 125 100 MHz Automatic and Controlled Precharge Command CO Multiple Burst Read with Single Write Operation o • 8 10 ns


    OCR Scan     		39S16400/800/160AT-8/-10 cycles/64 P-TSOPII-44-1 P-TSOPII-50-1 39S16400/800/160AT-8/-10 GPX05956 39S16800AT-8 39S16800AT-10 PDF

    SMD marking s07

    Abstract: smd marking YB smd marking T22 smd code Yj 33 1t211 39S16400 JEM AC3 ml 721 T1-1 P-TSOPII-44 SP 1191
    Text: SIEM EN S 16 MBit Synchronous DRAM • HYB 39S16400/800/160CT-8/-10 High Performance: /c K M A X ?CK3 -8 -10 Units 125 100 MHz 8 10 ns ! AC3 6 7 ?CK2 10 12 ns ?AC2 6 8 ns ns • Multiple Burst Read with Single Write Operation • Autom atic and Controlled Precharge


    OCR Scan     		39S16400/800/160CT-8/-10 fl235b05 SMD marking s07 smd marking YB smd marking T22 smd code Yj 33 1t211 39S16400 JEM AC3 ml 721 T1-1 P-TSOPII-44 SP 1191 PDF

    SEM t11

    Abstract: 39S16800 39S16800AT-8 Q1323 q1333
    Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command


    OCR Scan     		HYB39S1640x/80x/16xAT-8/-10 16MBit P-TSOPI-44 400mil SEM t11 39S16800 39S16800AT-8 Q1323 q1333 PDF

    Untitled

    Abstract: No abstract text available
    Text: 39S16400/800/160CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    OCR Scan     		HYB39S16400/800/160CT-8/-10 16MBit PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70


    OCR Scan     		P-SOJ-26/20-5 PDF

    SS35L

    Abstract: smd marking YB Q67100-Q1244 AAFL1
    Text: SIEM EN S 16 MBit Synchronous DRAM Preliminary Information • High Performance: CAS latency = 3 -10 -12 Units fCK 100 83 MHz tCK3 10 12 ns tAC3 8 10 ns • Multiple Burst Operation Read • Autom atic Com mand • Data M ask for Read / W rite control x4, x8


    OCR Scan     		0235bOS SS35L smd marking YB Q67100-Q1244 AAFL1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 39S16400/800CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM fourth generation Preliminary Information • High Performance: Multiple Burst Operation -8 -10 Units fCK(max.) 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command Read with Single Write


    OCR Scan     		HYB39S16400/800CT-8/-10 16MBit PDF

    3165805AT-60

    Abstract: Q67100
    Text: SIEMENS Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Ordering Code Page HYB 3116160BSJ-50 on request 618 HYB 311616QBSJ-60 on request 618 HYB 3116160BSJ-70 on request 618 HYB 3116160BST-50 on request 618 HYB 3116160BST-60


    OCR Scan     		3116160BSJ-50 311616QBSJ-60 3116160BSJ-70 3116160BST-50 3116160BST-60 3116160BST-70 3116165BSJ-50 3116165BSJ-60 3116165BSJ-70 3116165BST-50 3165805AT-60 Q67100 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 16 MBit Synchronous DRAM Preliminary Information • High Performance: CAS latency = 3 -10 -12 Units fCK 100 83 MHz tCK3 10 12 ns tAC3 8 10 ns Multiple Burst Read with Operation Automatic Command and Controlled Single Write Precharge Data Mask for Read / Write control x4, x8


    OCR Scan     		fl235b05 PDF