9633E
Abstract: 3107E-01 3520E-11 805E-01 853e HYB39S64800T max 8734E 1600E-03 SIEMEMS transistor 702E
Text: INFORMATION NOTE IBIS MODELS FOR SIEMENS DRAM and SDRAMs 9.96 InfIBIS.DOC IBIS MODELS I/O-Buffer Information Specification IBIS Behavioral IBIS is an emerging standard for electronic behavioral specifications of digital integrated circuit input/output (I/O) analog characteristics. IBIS
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982e-01
814e-01
677e-01
602e-01
570e-01
640e-01
828e-01
126e-01
528e-01
027e-01
9633E
3107E-01
3520E-11
805E-01
853e
HYB39S64800T
max 8734E
1600E-03
SIEMEMS
transistor 702E
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transistor r 606 j
Abstract: transistor s46 sfh606 opto coupling transistor Siemens S35
Text: SIEMENS C M P N T S i OPTO MME D Ô23fe>32b QOGSGbti 5 B S I E X SIEMEMS SFH 606 5.3 kV TRIOS* OPTOCOUPLER HIGH REL/FAST TRANSISTOR •Hl- S3 Package Dimensions In Inches mm •307 (7.B) .291 (7.4) 1 .256(6.5) 548(6.3) E E E 1 a 3 3 Ï J base MO D E E
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Ass25eC
transistor r 606 j
transistor s46
sfh606
opto coupling transistor
Siemens S35
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Untitled
Abstract: No abstract text available
Text: 31. 1 9 9 Sene HM S e rie s H M DEL-SMDMetallglasurschicht-Netzwerke DILrSMD M etalglaze Film Networks nyh V I T R O H M VITIIOHM DEUTSCHLAND GmbH SIE M E N SSTR . 7-8 2 8 4 3 3 . P1NNEBERG •w. +49 |0HaU/70M Fm . +49 0 4101/73787 Technische Daten Specification
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0HaU/70M
S016M
03/Wid
06/Wid
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Untitled
Abstract: No abstract text available
Text: SerieKWA Series KWA Drahtwiderstand Wirewound resistor VITROHM SffiMCMSST*. 7-0 -M.*4»m4aM/70M *.+«• ram m /nm Technische Daten Specification Typ Type KWA 15 KWA 20 KWA 30 KWA 40 1348 1364 1975 1990 Bauform Style Tolcranz Tolerance % 5/10 5/ 1 0 5/10
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m4aM/70M
KWA15
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