9633E
Abstract: 3107E-01 3520E-11 805E-01 853e HYB39S64800T max 8734E 1600E-03 SIEMEMS transistor 702E
Text: INFORMATION NOTE IBIS MODELS FOR SIEMENS DRAM and SDRAMs 9.96 InfIBIS.DOC IBIS MODELS I/O-Buffer Information Specification IBIS Behavioral IBIS is an emerging standard for electronic behavioral specifications of digital integrated circuit input/output (I/O) analog characteristics. IBIS
|
Original
|
PDF
|
982e-01
814e-01
677e-01
602e-01
570e-01
640e-01
828e-01
126e-01
528e-01
027e-01
9633E
3107E-01
3520E-11
805E-01
853e
HYB39S64800T
max 8734E
1600E-03
SIEMEMS
transistor 702E
|
39S16800AT-8
Abstract: smd marking m11 Q67100-Q1323 Q67100-Q1333 Q67100-Q1335 39S16800T 39S16800AT-10 smd marking code M11 smd code m6
Text: 16 MBit Synchronous DRAM second generation HYB 39S16400/800/160AT-8/-10 Advanced Information • High Performance: CAS latency = 3 • Multiple Burst Read with Single Write Operation -8 -10 Units fCK 125 100 MHz • Automatic and Controlled Precharge Command
|
Original
|
PDF
|
39S16400/800/160AT-8/-10
cycles/64
P-TSOPII-50
GPX05956
39S16800AT-8
smd marking m11
Q67100-Q1323
Q67100-Q1333
Q67100-Q1335
39S16800T
39S16800AT-10
smd marking code M11
smd code m6
|
SS35L
Abstract: smd marking YB Q67100-Q1244 AAFL1
Text: SIEM EN S 16 MBit Synchronous DRAM Preliminary Information • High Performance: CAS latency = 3 -10 -12 Units fCK 100 83 MHz tCK3 10 12 ns tAC3 8 10 ns • Multiple Burst Operation Read • Autom atic Com mand • Data M ask for Read / W rite control x4, x8
|
OCR Scan
|
PDF
|
0235bOS
SS35L
smd marking YB
Q67100-Q1244
AAFL1
|
3165805AT-60
Abstract: Q67100
Text: SIEMENS Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Ordering Code Page HYB 3116160BSJ-50 on request 618 HYB 311616QBSJ-60 on request 618 HYB 3116160BSJ-70 on request 618 HYB 3116160BST-50 on request 618 HYB 3116160BST-60
|
OCR Scan
|
PDF
|
3116160BSJ-50
311616QBSJ-60
3116160BSJ-70
3116160BST-50
3116160BST-60
3116160BST-70
3116165BSJ-50
3116165BSJ-60
3116165BSJ-70
3116165BST-50
3165805AT-60
Q67100
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 16 MBit Synchronous DRAM Preliminary Information • High Performance: CAS latency = 3 -10 -12 Units fCK 100 83 MHz tCK3 10 12 ns tAC3 8 10 ns Multiple Burst Read with Operation Automatic Command and Controlled Single Write Precharge Data Mask for Read / Write control x4, x8
|
OCR Scan
|
PDF
|
fl235b05
|