39N60BD1 Search Results

Contextual Info: HiPerFASTTM IGBT with Diode IXGH 39N60BD1 VCES IC25 VCE sat tfi(typ) Maximum Ratings TO-247 AD = = = = 600 V 76 A 1.8 V 200 ns Preliminary data Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous

39n60bd1

Abstract: robot control
Contextual Info: IXGH 39N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi(typ) = 600 V = 76 A = 1.8 V = 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

39n60bd1

Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 39N60B IXGR 39N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 66 A = 1.8 V = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

39N60B

Abstract: 39N60BD1 IXGR39N60BD1
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 39N60B IXGR 39N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 66 A = 1.8 V = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 39N60B IXGR 39N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 66 A = 2.0 V = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

39n60bd1

Abstract: 39N60B
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 39N60B IXGR 39N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 66 A = 1.8 V = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

C110

Abstract: IXGH39N60BD1
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 39N60B IXGR 39N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 66 A = 1.8 V = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

TO-247 AD

Contextual Info: HiPerFASTTM IGBT with Diode IXGH 39N60BD1 VCES IC25 VCE sat tfi(typ) Maximum Ratings TO-247 AD = = = = 600 V 76 A 1.8 V 200 ns Preliminary data Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous

Contextual Info: □ IXYS HHifl JL æ* X HiPerFAST IGBT with Diode IXGH 39N60BD1 V CES = ^C25 ” V CE sat = tfi(typ ) 600 76 1.8 200 V A V ns P relim inary data sh ee t Maximum Ratings Symbol TestConditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i

ad6v

Contextual Info: IXGH 39N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi(typ) = 600 V = 76 A = 1.8 V = 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

Contextual Info: HiPerFASTTM IGBT IXGH39N60B 39N60BD1 IXGT39N60B 39N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600

IXGH39N60BD1

Abstract: 39N60B 39n60bd1
Contextual Info: HiPerFASTTM IGBT IXGH39N60B VCES 39N60BD1 IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20

120n60b

Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Contextual Info: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

12n60c

Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM

IXGH39N60BD1

Abstract: IXGH39N60B IXGT39N60B 39n60bd1 M3MD 819 39a IXGT39N60BD1 39N60B
Contextual Info: HiPerFASTTM IGBT IXGH39N60B 39N60BD1 IXGT39N60B 39N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600

2QN60

Abstract: ixgh 1500
Contextual Info: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01