35PD10M
Abstract: Photodiode, 1550nm detector ingaas InGaAs Photodiode 1550nm
Text: Ultra-Large Area InGaAs p-i-n Photodiode 35PD10M The 35PD10M is the largest standard InGaAs detector available on the market. Both circular 10 mm diameter and square (10 mm edge length) formats are offered. Standard packaging includes a hermetic TO-3 header and a ceramic flat pack. Custom packaging would also be
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35PD10M
35PD10M
1300nm
1550nm
-40oC
250oC
Photodiode, 1550nm
detector ingaas
InGaAs Photodiode 1550nm
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PIN Photodiode 1550nm sensitivity
Abstract: InGaAs Photodiode 1550nm PIN Photodiode 1550nm photodiode responsivity 1550nm, 1 35PD10M PIN photodiode InGaAs 1550nm
Text: Ultra-Large Area InGaAs p-i-n Photodiode 35PD10M The 35PD10M is the largest standard InGaAs detector available on the market. Both circular 10 mm diameter and square (10 mm edge length) formats are offered. Standard packaging includes a hermetic TO-3 header and a ceramic flat pack. Custom packaging would also be
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35PD10M
35PD10M
1300nm
1550nm
PD10M
PIN Photodiode 1550nm sensitivity
InGaAs Photodiode 1550nm
PIN Photodiode 1550nm
photodiode responsivity 1550nm, 1
PIN photodiode InGaAs 1550nm
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Untitled
Abstract: No abstract text available
Text: Ultra-Large Area InGaAs p-i-n Photodiode Sheet 1 of 1 35PD10M The 35PD10M is the largest standard InGaAs detector available on the market today. Both circular 10mm diameter and square (10mm edge length) formats are offered. Applications include high sensitivity
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35PD10M
35PD10M
1300nm
1500nm
50ohm
200mA
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detector inas
Abstract: No abstract text available
Text: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO
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13PD55
13PD75
13PD75LDC
13PD100
13PD150
35PD300
35PD300LDC
2PD250
detector inas
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2PD250
Abstract: 35PD10M 35PD3M detector inas
Text: CHEMSENSE Detectors Data Sheet Sheet 2 of 2 NIR Components - 2.2 PD Series The 2.2 PD series of detectors is based on GAInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1.0 and 2.4 µm, and peak response of 1 A/W occurs at about 2.2 µm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared
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2PD250
2PD500
35PD5M
35PD10M
35PD3M
detector inas
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