K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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HYR1612820G-653
Abstract: HYR1612820G-745 HYR1612820G-840 HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 INFINEON, B20 A17 INFINEON marking a86
Text: HYR 16xx20G/HYR 18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 144 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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16xx20G/HYR
18xx20G
HYR1612820G-653
HYR1612820G-745
HYR1612820G-840
HYR1612820G-845
HYR1812820G-653
HYR1812820G-745
HYR1812820G-845
INFINEON, B20
A17 INFINEON
marking a86
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EL B17
Abstract: No abstract text available
Text: UGD128R16 8 08U6J(7J) Data sheets can be downloaded at www.unigen.com 256/288MB Bytes (128M x 16/18 bits) RAMBUS SO-RIMM MODULE 160 Pin SO-RIMM based on 8 pcs 8M x 16/18 RDRAM & 16K Refresh 128M x 16 bits, 128M x 18bits w/ECC, 800MHz and 600MHz GENERAL DESCRIPTION
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UGD128R16
08U6J
256/288MB
18bits
800MHz
600MHz
160-Pin
UGD128R1608U6J-L6/G6/T6
256MB
128Mx16)
EL B17
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SCK 183
Abstract: 128Mx16
Text: UG7128R16 8 16U6J(7J) Data sheets can be downloaded at www.unigen.com 256M Bytes (128M x 16/18 bits) RAMBUS RIMM MODULE 184 Pin RIMM based on 16 pcs 8M x 16/18 RDRAM & 4K Refresh 128M x 16 bits, 128M x 18bits w/ECC, 800MHz and 600MHz GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)
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UG7128R16
16U6J
18bits
800MHz
600MHz
184-Pin
256MB
SCK 183
128Mx16
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a65 1021
Abstract: No abstract text available
Text: MR16R1622 4/8/G AF0(1) MR18R1622(4/8/G)AF0(1) Preliminary Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002)
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MR16R1622
MR18R1622
256/288Mbit
16Mx16)
256Mb
16K/32ms
16Mx18)
288Mb
a65 1021
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DRAM material declaration
Abstract: No abstract text available
Text: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004
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MR16R1624
MR18R1624
256/288Mbit
16Mx16)
256Mb
16K/32ms
16Mx18)
288Mb
DRAM material declaration
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MARKING CODE 11gb
Abstract: No abstract text available
Text: MR18R326GAG0 Preliminary Change History Version 0.1 September 2003 - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Datasheet Page 0 Version 0.1 Sept. 2003 MR18R326GAG0 Preliminary (32Mx18)*16pcs RIMMTM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V
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MR18R326GAG0
256/288Mbit
32Mx18)
16pcs
576Mb
32K/32ms
MARKING CODE 11gb
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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Untitled
Abstract: No abstract text available
Text: RDRAM Code Information 1/2 Last Updated : June 2009 K4RXXXXXXX - XXXXXXX 1 2 3 4 1. Memory (K) 2. DRAM : 4 3. Small Classification R : RDRAM ® 4~5. Density,Refresh 27 : 128M, 16K/32ms (1.95us) 44 : 144M, 16K/32ms (1.95us) 5 6 7 8 9 10 11 12 13 14 15 16 17 18
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16K/32ms
54ball)
32K/32ms
300MHz
28clks,
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ic A2611
Abstract: a2611 A2631 a2610 a2633 s2s65a00 A2624 18vdc power supply Epson EPD controller A2651
Text: S2S65A00 Technical Manual Rev.1.2 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability of any kind arising out of any inaccuracies contained in this material
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S2S65A00
ic A2611
a2611
A2631
a2610
a2633
A2624
18vdc power supply
Epson EPD controller
A2651
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marking A26
Abstract: HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 HYR1612820G-653 HYR1612820G-745 HYR1612820G-840 HYR1612 A52 LD
Text: HYR 16xx20G/HYR 18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 144 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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16xx20G/HYR
18xx20G
256MB,
128MB,
marking A26
HYR1612820G-845
HYR1812820G-653
HYR1812820G-745
HYR1812820G-845
HYR1612820G-653
HYR1612820G-745
HYR1612820G-840
HYR1612
A52 LD
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SAMSUNG MR18R162GMN0
Abstract: A76 MARKING CODE MR18R162GMN0-CK8
Text: MR16R1624 6/8/C/G MN0 MR18R1624(6/8/C/G)MN0 Change History Version 0.9 (January 2000) - Preliminary * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet Version 1.0 (October 2000) - Preliminary * Based on the 1.0ver Rambus 256/288Mb RDRAMs base RIMM datasheet
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MR16R1624
MR18R1624
02ver
128/144Mbit
256/288Mb
100ps
250ps
200ps
-711MHz/-600MHz)
SAMSUNG MR18R162GMN0
A76 MARKING CODE
MR18R162GMN0-CK8
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Untitled
Abstract: No abstract text available
Text: Direct Rambus RIMM™ Module 256 MBytes 128M x 16/18 based on 8Mx16/18 Overview Key Timing Parameters/Part Numbers The Direct Rambus™ RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory,
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8Mx16/18
256MB
HYMR11696/11896
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MARKING B83
Abstract: A74 marking diode u2 a90 marking A32 HYR163200G-653 HYR163200G-745 HYR163200G-840 HYR163200G-845 HYR183200G-653 HYR183200G-745
Text: HYR16 18 3200G 64/72 MByte RIMM Modules Direct RDRAM RIMM Modules Perliminary Information Rev. 0.9 Features Overview n The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including
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HYR16
3200G
600MHz
800MHz
128MB,
MARKING B83
A74 marking
diode u2 a90
marking A32
HYR163200G-653
HYR163200G-745
HYR163200G-840
HYR163200G-845
HYR183200G-653
HYR183200G-745
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Untitled
Abstract: No abstract text available
Text: KMMR16R84 6/8/C/G C1 KMMR18R84(6/8/C/G)C1 4/6/8/12/16d 4/6/8/12/16d RIMMTM RIMMTM Preliminary Module with 128Mb RDRAMs Module with 144Mb RDRAMs Overview Key Timing Parameters/Part Numbers The Rambus RIMM module is a general purpose highperformance memory subsystem suitable for use in a broad
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KMMR16R84
KMMR18R84
4/6/8/12/16d
128Mb
144Mb
128Mb/144Mb
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S8S3122X16
Abstract: S8S3122X16-TCR1 S8S3122X16-TCR2
Text: S8S3122X16 CMOS SDRAM 256K x 16 SDRAM 128K x 16bit x 2 Banks Synchronous DRAM LVTTL Version 0.0 Sep 2001 Samsung Electronics reserves the right to change products or specification without notice. Ver 0.0 Sep. '01 S8S3122X16 CMOS SDRAM Revision History Version 0.0 Sep. 2001
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S8S3122X16
16bit
AG1000re
50-TSOP2-400CF
20MAX
10MAX
075MAX
S8S3122X16
S8S3122X16-TCR1
S8S3122X16-TCR2
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EM488M1644VBA
Abstract: No abstract text available
Text: 128Mb Mobile SDRAM Ordering Information EM 48 8M 16 4 4 V B A – 75 F EOREX Logo EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : Power Blank : Standard I : Industrial 40 41 42 43 46 48 F: PB free package Density 16M : 16 Mega Bits 8M : 8 Mega Bits
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128Mb
200MHz
183MHz
167MHz
143MHz
133MHz
125MHz
100MHz
16Bank
32Bank
EM488M1644VBA
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MB89980
Abstract: FPT-64P-M09 MB89983 MB89P985 ROM-64QF2-28DP MB89P985101 al p53
Text: FUJITSU SEMICONDUCTOR DATA SHEET Revision 3.4 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89980 Series MB89983/P985/PV980 • DESCRIPTION The MB89980 series is a line of the general-purpose, single-chip microcontrollers. In addition to a compact instruction set, the microcontrollers contain a variety of peripheral functions such as an LCD controller/driver,
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MB89980
MB89983/P985/PV980
256-byte
FPT-64P-M09
MB89983
MB89P985
ROM-64QF2-28DP
MB89P985101
al p53
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A23 851 diode
Abstract: diode 910 b34 HYMR225616 HYMR26416 256MX16 H-745
Text: TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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256/288Mb
256/288Mb
600MHz
711MHz
800MHz
A23 851 diode
diode 910 b34
HYMR225616
HYMR26416
256MX16
H-745
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b58 468
Abstract: B58 608
Text: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004
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MR16R1624
MR18R1624
256/288Mbit
16Mx16)
256Mb
16K/32ms
16Mx18)
288Mb
b58 468
B58 608
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HYR163240G-653
Abstract: HYR163240G-745 HYR163240G-840 HYR163240G-845 HYR166440G-653 HYR166440G-745 HYR183240G-653 HYR183240G-745 HYR183240G-840 HYR183240G-845
Text: HYR16xx40G / HYR18xx40G Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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HYR16xx40G
HYR18xx40G
512MB,
256MB,
128MB,
HYR163240G-653
HYR163240G-745
HYR163240G-840
HYR163240G-845
HYR166440G-653
HYR166440G-745
HYR183240G-653
HYR183240G-745
HYR183240G-840
HYR183240G-845
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HYMR116128-653
Abstract: HYMR116128-745 HYMR116128-840 HYMR116128-845 HYMR118128-653 HYMR118128-745 HYMR118128-750 HYMR116128-750
Text: Direct Rambus RIMM™ Module 256 MBytes 128M x 16/18 based on 8Mx16/18 Overview Key Timing Parameters/Part Numbers The Direct Rambus™ RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory,
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8Mx16/18
256MB
HYMR116128/118128
HYMR116128-653
HYMR116128-745
HYMR116128-840
HYMR116128-845
HYMR118128-653
HYMR118128-745
HYMR118128-750
HYMR116128-750
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MR16R162GAF0-CK8
Abstract: MR16R1622
Text: MR16R1622 4/8/G AF0 MR18R1622(4/8/G)AF0 Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Page 0 Version 1.1 Aug. 2001 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0 (16Mx16)*2(4/8/16)pcs RIMMTM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R1622
MR18R1622
256/288Mbit
16Mx16)
256Mb
16K/32ms
16Mx18)
288Mb
MR16R162GAF0-CK8
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cmos book
Abstract: No abstract text available
Text: 2 5 6 M /2 8 8 M -b it b a s e d R IM M HYMR2xxx16 18 H with 256/288Mb RDRAMs PRELIMINARY O v e rv ie w K e y T im in g P a ra m e te rs /P a rt N u m b e rs T h e R a m b u s R I M M m o d u le is a g e n e ra l p u r p o s e T h e f o llo w in g t a b le lis ts th e f r e q u e n c y a n d la te n c y b in s
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HYMR2xxx16
256/288Mb
13tCYCLE
357MHz
110mA
180mA
130mA
750mA
120mA
190mA
cmos book
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