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    A23 851 diode

    Abstract: B92 diode A79 marking code transistor marking A21 marking .A55 marking code ADH a74 marking code A84 diode b78 board 9535H
    Text: TM RIMM Module with 256/288Mb RDRAMs Preliminary Revision History * Rev. 0.95 Date : 2001.07.23 1. Page2, 7, 8, 10, 12 : Add 2D RIMM part Rev. 0.95 / July.01 1 TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The‘Rambus RIMMTM module is a general purpose


    Original     		256/288Mb 16/18TE122 BYTE123 BYTE124 BYTE125 BYTE126 18bit BYTE128 BYTE127 A23 851 diode B92 diode A79 marking code transistor marking A21 marking .A55 marking code ADH a74 marking code A84 diode b78 board 9535H PDF

    cmos book

    Abstract: No abstract text available
    Text: 2 5 6 M /2 8 8 M -b it b a s e d R IM M HYMR2xxx16 18 H with 256/288Mb RDRAMs PRELIMINARY O v e rv ie w K e y T im in g P a ra m e te rs /P a rt N u m b e rs T h e R a m b u s R I M M m o d u le is a g e n e ra l p u r p o s e T h e f o llo w in g t a b le lis ts th e f r e q u e n c y a n d la te n c y b in s


    OCR Scan     		HYMR2xxx16 256/288Mb 13tCYCLE 357MHz 110mA 180mA 130mA 750mA 120mA 190mA cmos book PDF

    Untitled

    Abstract: No abstract text available
    Text: HYMR2xxx16 18 H with 256/288Mb RDRAMs PRELIMINARY Continued BYTE NUMBER FUNCTION DESCRIPTION FUNCTION Option -840 I -845 I -745 Hex VALUE | -653 -840 I -845 j BYTE120 CDLY0/1 fortCDLY=9 BYTE121 CDLYO/1 fortCDLY=10 OOh BYTE122 CDLY0/1 fortC D LY =11 OOh BYTE123


    OCR Scan     		HYMR2xxx16 256/288Mb BYTE120 BYTE121 BYTE122 BYTE123 BYTE124 BYTE125 BYTE126 BYTE127 PDF