do-204al
Abstract: 1N5391 1N5399 JESD22-B102D J-STD-002B 1N5392 1N5393 1N5394 1N5396 1N5398
Text: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC
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1N5391
1N5399
2002/95/EC
2002/96/EC
DO-204AL
DO-41)
DO-204AL,
08-Apr-05
do-204al
1N5399
JESD22-B102D
J-STD-002B
1N5392
1N5393
1N5394
1N5396
1N5398
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1n5062g
Abstract: DO-204AC JESD22-B102D J-STD-002B 1N5059GP 1N5062GP
Text: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation
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1N5059GP
1N5062GP
MIL-S-19500
DO-204AC
DO-15)
2002/95/EC
2002/96/EC
08-Apr-05
1n5062g
DO-204AC
JESD22-B102D
J-STD-002B
1N5062GP
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BYW27-100GP
Abstract: BYW27-200GP
Text: BYW27-100GP thru BYW27-800GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction ed* t n e Pat * Glass-plastic encapsulation technique is covered by
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BYW27-100GP
BYW27-800GP
MIL-S-19500
2002/95/EC
2002/96/EC
DO-204AL,
08-Apr-05
BYW27-200GP
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Untitled
Abstract: No abstract text available
Text: CPV362M4UPbF Vishay High Power Products IGBT SIP Module Fast IGBT FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses RoHS • HEXFRED soft ultrafast diodes COMPLIANT • Optimized for high speed over 5 kHz
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CPV362M4UPbF
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: CPV364M4FPbF Vishay High Power Products IGBT SIP Module Fast IGBT FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses RoHS • HEXFRED soft ultrafast diodes COMPLIANT • Optimized for medium speed 1 to 10 kHz
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CPV364M4FPbF
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: CPV363M4KPbF Vishay High Power Products IGBT SIP Module Short Circuit Rated Ultrafast IGBT FEATURES • Short circuit rated ultrafast: Optimized for high speed over 5.0 kHz (see fig. 1 for current vs. frequency curve), and short circuit rated to 10 µs at 125 °C, VGE = 15 V
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CPV363M4KPbF
11-Mar-11
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Si2337DS-T1-E3
Abstract: Si2337DS Si2337DS Rev. A
Text: New Product Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a rDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ) • TrenchFET Power MOSFET RoHS 7 COMPLIANT TO-236 (SOT-23) S G 1
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Si2337DS
O-236
OT-23)
Si2337DS-T1-E3
08-Apr-05
Si2337DS Rev. A
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BY251GP
Abstract: BY255GP JESD22-B102D J-STD-002B
Text: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation
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BY251GP
BY255GP
DO-201AD
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
BY255GP
JESD22-B102D
J-STD-002B
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gi756 diode
Abstract: GI752 GI750 GI751 GI758 JESD22-B102D J-STD-002B P600 GI756
Text: GI750 thru GI758 Vishay General Semiconductor High Current Axial Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 µA • High forward current capability • High forward surge capability • Solder dip 260 °C, 40 seconds
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GI750
GI758
2002/95/EC
2002/96/EC
08-Apr-05
gi756 diode
GI752
GI751
GI758
JESD22-B102D
J-STD-002B
P600
GI756
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Si2351DS
Abstract: marking code vishay SILICONIX SI2351DST1E3
Text: Si2351DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Power MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 3.0 0.205 at VGS = - 2.5 V - 2.2 Qg (Typ) • PWM Optimized • 100 % Rg tested 3.2 nC
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Si2351DS
O-236
OT-23)
Si2351DS-T1-E3
08-Apr-05
marking code vishay SILICONIX
SI2351DST1E3
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GP08D
Abstract: GP08B DO-204AL GP08A GP08J JESD22-B102D J-STD-002B
Text: GP08A thru GP08J Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat *Glass Encapsulation
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GP08A
GP08J
DO-204AL
DO-41)
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
GP08D
GP08B
DO-204AL
GP08J
JESD22-B102D
J-STD-002B
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DO-204AC
Abstract: GPP20M GPP20A JESD22-B102D J-STD-002B
Text: New Product GPP20A thru GPP20M Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 µA • High forward surge capability
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GPP20A
GPP20M
MIL-S-19500
DO-204AC
DO-15)
2002/95/EC
2002/96/EC
DO-204AC,
08-Apr-05
DO-204AC
GPP20M
JESD22-B102D
J-STD-002B
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GP02-40
Abstract: 20E-3 DO-204AL GP02-20 JESD22-B102D J-STD-002B
Text: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction ed* t n e Pat *Glass Encapsulation technique is covered by
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GP02-20
GP02-40
MIL-S-19500
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
08-Apr-05
GP02-40
20E-3
DO-204AL
JESD22-B102D
J-STD-002B
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1N5614GP
Abstract: 1N5622GP DO-204AC JESD22-B102D J-STD-002B
Text: 1N5614GP thru 1N5622GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation
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1N5614GP
1N5622GP
DO-204AC
DO-15)
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
1N5622GP
DO-204AC
JESD22-B102D
J-STD-002B
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SI4940DY
Abstract: No abstract text available
Text: New Product Si4940DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A) 0.036 at VGS = 10 V 5.7 0.059 at VGS = 4.5 V 4.4 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT SO-8 D1 S1 1 8 D1
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Si4940DY
Si4940DY-T1
Si4940DY-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: New Product Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • PWM-Optimized TrenchFET Power MOSFET • 100 % Rg Tested • Avalanche Tested
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Si4434DY
Si4434DY-T1-E3
18-Jul-08
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SI4483EDY
Abstract: No abstract text available
Text: Si4483EDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 30 ID (A) 0.0085 at VGS = - 10 V - 14 0.014 at VGS = - 4.5 V - 11 • TrenchFET Power MOSFET • ESD Protection: 3000 V RoHS APPLICATIONS COMPLIANT • Notebook PC
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Si4483EDY
Si4483EDY-T1-E3
18-Jul-08
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Si6991DQ
Abstract: No abstract text available
Text: SPICE Device Model Si6991DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6991DQ
18-Jul-08
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SUP28N15-52
Abstract: No abstract text available
Text: SPICE Device Model SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP28N15-52
18-Jul-08
SUP28N15-52
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74193
Abstract: 74193 data sheet 74193 datasheet
Text: SPICE Device Model Si4904DY Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4904DY
18-Jul-08
74193
74193 data sheet
74193 datasheet
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Si4701BDY
Abstract: Si4701BDY-T1-E3
Text: New Product Si4701BDY Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 V 30 rDS(on) (Ω) ID (A) 0.015 at VGS2 = 10 V 7.0 0.021 at VGS2 = 4.5 V 6.0 RoHS 5, 6, 7 3, 4 VIN S2 COMPLIANT Q2 SO-8 8 S1 1 8 VHV VON/OFF 2 7 VIN S2 3 6 VIN S2 4 5
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Si4701BDY
Si4701BDY-T1-E3
18-Jul-08
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v5401
Abstract: Si4866BDY
Text: SPICE Device Model Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4866BDY
18-Jul-08
v5401
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SUV90N06-05
Abstract: SUV90N0
Text: SUV90N06-05 Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 90a • TrenchFET Power MOSFET • 175 °C Junction Temperature • PWM Optimized APPLICATIONS
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SUV90N06-05
O-262
18-Jul-08
SUV90N06-05
SUV90N0
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . C O P Y R IG H T RELEASED BY ^ C O E L E C T R O N IC S C O R P O R A T IO N . FO R ALL P U B L IC A T IO N R IG H T S R E V IS IO N S 50 RESERVED. LTR D E S C R IP T IO N REL PER DATE DWN JR 30JUL07 ECR 0 7 —0 1 7 1 ¿
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30JUL07
03MAY07
31MAR2000
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