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    Vishay Semiconductors BY251GP-E3-73

    DIODE GEN PURP 200V 3A DO201AD
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    DigiKey BY251GP-E3-73 Ammo Pack
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    BY251GP-E3-73 Cut Tape 1
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    Vishay Semiconductors BY251GP-E3-54

    DIODE GEN PURP 200V 3A DO201AD
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    Vishay Semiconductors BY251GPHE3-73

    DIODE GEN PURP 200V 3A DO201AD
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    Vishay Semiconductors BY251GPHE3-54

    DIODE GEN PURP 200V 3A DO201AD
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    Bristol Electronics BY251GP-E3/73 1,000
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    Quest Components BY251GP-E3/73 800
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    BY251GP Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BY251GP General Semiconductor Glass Passivated Junction Plastic Rectifier Original PDF
    BY251GP Vishay Siliconix Diodes Original PDF
    BY251GP Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BY251GP-E3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURP 200V 3A DO201AD Original PDF
    BY251GP-E3/73 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURP 200V 3A DO201AD Original PDF
    BY251GPHE3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURP 200V 3A DO201AD Original PDF
    BY251GPHE3/73 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURP 200V 3A DO201AD Original PDF

    BY251GP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BY251GP

    Abstract: BY252GP BY253GP BY254GP BY255GP
    Text: BY251GP thru BY255GP Glass Passivated Junction Plastic Rectifier t c u rodFeatures P New DO-201AD • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High temperature metallurgically bonded construction • Cavity-free glass passivated junction


    Original
    BY251GP BY255GP DO-201AD MIL-S-19500 Curren100 50mVp-p BY252GP BY253GP BY254GP BY255GP PDF

    Untitled

    Abstract: No abstract text available
    Text: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, IR less than 0.1 A


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    BY251GP BY255GP MIL-S-19500 22-B106 AEC-Q101 DO-201AD 2002/95/EC 2002/96/EC 18-Jul-08 PDF

    BY251GP

    Abstract: No abstract text available
    Text: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 200 V to 1300 V IFSM 100 A IR 5.0 µA VF 1.1 V Tj max. 175 °C d* e t n Pate DO-201AD * Glass-plastic encapsulation


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    BY251GP BY255GP DO-201AD MIL-S-19500 DO-201AD, UL-94V-0 08-Apr-05 PDF

    BY251GP

    Abstract: BY255GP JESD22-B102D J-STD-002B
    Text: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation


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    BY251GP BY255GP DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 BY255GP JESD22-B102D J-STD-002B PDF

    BY251GP

    Abstract: BY255GP JESD22-B102D J-STD-002B
    Text: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat * Glass-plastic encapsulation


    Original
    BY251GP BY255GP MIL-S-19500 DO-201AD 2002/95/EC 2002/96/EC 08-Apr-05 BY255GP JESD22-B102D J-STD-002B PDF

    BY251GP

    Abstract: No abstract text available
    Text: BY251GP thru BY255GP Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Junction Plastic Rectifiers DO-201AD 1.0 25.4 Min. Reverse Voltage 200 to 1300V Forward Current 3.0A * d e t n e t Pa Features • Plastic package has Underwriters Laboratories


    Original
    BY251GP BY255GP DO-201AD MIL-S-19500 50mVp-p 14-Feb-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: BY251GP, BY252GP, BY253GP, BY254GP, BY255GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction


    Original
    BY251GP, BY252GP, BY253GP, BY254GP, BY255GP 22-B106 AEC-Q101 DO-201AD 2002/95/EC. 2002/95/EC PDF

    Untitled

    Abstract: No abstract text available
    Text: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, IR less than 0.1 A


    Original
    BY251GP BY255GP MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC DO-201AD 2011/65/EU 2002/95/EC. PDF

    BY251GP

    Abstract: No abstract text available
    Text: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current, IR less than 0.1 µA


    Original
    BY251GP BY255GP DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 PDF

    BY251GP

    Abstract: No abstract text available
    Text: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat * Glass-plastic encapsulation


    Original
    BY251GP BY255GP DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current, IR less than 0.1 µA


    Original
    BY251GP BY255GP DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 PDF

    BY255GP

    Abstract: BY251GP
    Text: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 200 V to 1300 V IFSM 100 A IR 5.0 µA VF 1.1 V Tj max. 175 °C d* e t n Pate DO-201AD * Glass-plastic encapsulation


    Original
    BY251GP BY255GP DO-201AD MIL-S-19500 DO-201AD, UL-94V-0 14-Oct-05 BY255GP PDF

    BY251GP

    Abstract: BY255gp BY252GP BY253GP BY254GP
    Text: BY251GP thru BY255GP Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Junction Plastic Rectifiers DO-201AD 1.0 25.4 Min. Reverse Voltage 200 to 1300V Forward Current 3.0A * d e t n e t Pa Features • Plastic package has Underwriters Laboratories


    Original
    BY251GP BY255GP DO-201AD MIL-S-19500 50mVp-p 17-Dec-02 BY255gp BY252GP BY253GP BY254GP PDF

    BY255GP

    Abstract: BY251GP BY252GP JESD22-B102 J-STD-002
    Text: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current, IR less than 0.1 µA


    Original
    BY251GP BY255GP DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 BY255GP BY252GP JESD22-B102 J-STD-002 PDF

    BYD74G

    Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
    Text: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any


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    5KA10 5KA10A 5KA11 5KA11A 5KA12 5KA12A 5KA13 5KA13A 5KA15 5KA15A BYD74G FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z PDF

    COLOR tv tube charger circuit diagrams

    Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original
    MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original
    MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original
    MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    vishay 1N4007 DO-214AC

    Abstract: VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . V I S H AY I N T E R T E C H N O L O G Y, I N C . 整流器 整流器 选型指南 肖特 基 整 流 器 超快 恢 复整流器 标 准和快 速恢 复整流器 桥式整流器 w w w. v i s h a y. c o m


    Original
    VMN-SG2178-1111 vishay 1N4007 DO-214AC VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100 PDF

    MUR120 SMD

    Abstract: diode DGP30 VH500 SMA UF4007 SMD DIODE UF4007 b330la UGF10FCT ss2ph10 UGF5 uf5408 SMD diode
    Text: 半導体: 整流素子 • 小信号ダイオード • ツェナーダイオードとサージ吸収素子 • MOSFETs • 高周波トランジスタ • オプトエレクトロニクス • ICs 受動素子: 抵抗器 • 磁性体 • キャパシタ • ひずみゲージ変換器および応力解析システム


    Original
    UL94V-0) ITO-220AB O-220 MUR120 SMD diode DGP30 VH500 SMA UF4007 SMD DIODE UF4007 b330la UGF10FCT ss2ph10 UGF5 uf5408 SMD diode PDF

    shindengen mr5060

    Abstract: TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M
    Text: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A


    Original
    5KA10 5KA10A 5KA11 5KA11A 5KA12 5KA12A 5KA13 5KA13A 5KA15 5KA15A shindengen mr5060 TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M PDF

    10BQ100PbF

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Rectifiers - Worldwide Leader in Power Rectifiers Rectifiers FEATURED PRODUCTS • • • • • Bridge Rectifiers Fast Recovery Rectifiers Schottky Rectifiers Standard Rectifiers Ultrafast Recovery Rectifiers


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    VMN-SG2125-1403 DISC9337-2726 10BQ100PbF PDF