4435sc
Abstract: WTK4435 Mos-Fet 4435SC mosfet 4435sc le1d
Text: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 7 6 D 3 D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN CURRENT -8 AMPERES DRAIN SOURCE VOLTAGE 5 D 4 G -30 VOLTAGE Features: * Super high dense * Cell design for low RDS(ON) * RDS(ON)<20mΩ@VGS = -10V * RDS(ON)<35mΩ@VGS = -4.5V
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WTK4435
WTK4435
300us,
03-May-07
4435sc
Mos-Fet 4435SC
mosfet 4435sc
le1d
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350V3
Abstract: PE60
Text: PE60 Vishay Sfernice Power Panel Potentiometer FEATURES • 6 W at 25 °C • Cermet element RoHS • High power rating 6 W COMPLIANT • Full sealing • Mechanical strength • Use of faston 2.86 connections • Industrial and professional grade DIMENSIONS in millimeters
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PE60L
PE60M
PE60M)
08-Apr-05
350V3
PE60
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SMD Magnetics
Abstract: smd marking code pJ 1219 SMD PJ 899
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd magnetics, inductors and ferrite beads vishay Dale vse-db0059-1201e Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0059-1201e
SMD Magnetics
smd marking code pJ 1219
SMD PJ 899
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PTCHP12S110HYE
Abstract: PTCHP12S050HYE 2381-662 vaporizer PTCHP12S
Text: 2381 662 95./PTCHP12S.HYE Vishay BCcomponents PTC Thermistors For Heating Application FEATURES • Ag-metallisation suitable for clamping • Self-regulating • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION These directly heated thermistors have a positive
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/PTCHP12S.
2002/95/EC
2002/96/EC
08-Apr-05
PTCHP12S110HYE
PTCHP12S050HYE
2381-662
vaporizer
PTCHP12S
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DATASHEET 5609
Abstract: DATASHEET 5609 transistor 5609 5609 transistor 8309 AN609 Si1307EDL
Text: Si1307EDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1307EDL
AN609
03-May-07
DATASHEET 5609
DATASHEET 5609 transistor
5609
5609 transistor
8309
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ptn1206
Abstract: tantalum nitride 10R0 h8801 PTN12
Text: PTN Vishay Thin Film Commercial Thin Film Chip Resistors FEATURES • Lead Pb -free or Sn/Pb terminations available Pb-free • Moisture resistant RoHS* • Non-standard values available COMPLIANT • Will pass + 85 °C, 85 % relative humidity and 10 % rated
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08-Apr-05
ptn1206
tantalum nitride
10R0
h8801
PTN12
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AN609
Abstract: Si2312BDS
Text: Si2312BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si2312BDS
AN609
03-May-07
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Untitled
Abstract: No abstract text available
Text: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier May 2007 - Rev 03-May-07 D1002 Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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03-May-07
D1002
MIL-STD-883
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7636 mosfet
Abstract: AN609 Si3585DV
Text: Si3585DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3585DV
AN609
03-May-07
7636 mosfet
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7636 mosfet
Abstract: 3121 70507 AN609 Si2315BDS
Text: Si2315BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si2315BDS
AN609
03-May-07
7636 mosfet
3121
70507
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4948
Abstract: 7629 64948 AN609 Si1469DH
Text: Si1469DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1469DH
AN609
03-May-07
4948
7629
64948
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AN609
Abstract: Si1303EDL
Text: Si1303EDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1303EDL
AN609
03-May-07
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4606 mosfet
Abstract: 4606 A 4606 transistor 4606 mosfet AN609 Si2304BDS
Text: Si2304BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si2304BDS
AN609
03-May-07
4606 mosfet
4606
A 4606
transistor 4606 mosfet
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31136
Abstract: 3291 4413 5622 AN609
Text: SUD50NP04-83_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUD50NP04-83
AN609
CO3028
03-May-07
31136
3291
4413
5622
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8276 m
Abstract: AN609 power MOSFET spice model
Text: SiA810DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SiA810DJ
AN609
03-May-07
8276 m
power MOSFET spice model
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74669
Abstract: c 6092 4336 AN609 Si3851DV POWER MOSFET APPLICATION NOTE
Text: Si3851DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3851DV
AN609
03-May-07
74669
c 6092
4336
POWER MOSFET APPLICATION NOTE
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AN609
Abstract: Si3588DV
Text: Si3588DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3588DV
AN609
03-May-07
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SC75-6L
Abstract: AN826
Text: AN826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK SC75-6L Dual 1.250 0.049 0.250 (0.01) 0.500 (0.02) 0.250 (0.01) 0.300 (0.012) 0.155 (0.006) 0.445 (0.018) 0.320 (0.013) 0.290 (0.011) 2.000 (0.079) 1.700 (0.067) 1.100 (0.043) 0.320 (0.013) 0.290 (0.011)
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AN826
SC75-6L
03-May-07
AN826
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AN609
Abstract: Si5504BDC
Text: Si5504BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5504BDC
AN609
03-May-07
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mpp schematic
Abstract: LPT-3535-100LA LPT-3535-101LA LPT-3535-150LA LPT-3535-1R0LA LPT-3535-1R5LA LPT-3535-250LA LPT-3535-2R5LA LPT-3535-330LA LPT-3535-3R3LA
Text: LPT-3535-xxxLA, LB, LC Vishay Dale Inductors/Transformers Customizable, Surface Mount Torodial, Kool Mu *, Powdered Iron and MPP Cores FEATURES • Toroidal design for minimal EMI radiation in DC to DC converter applications • Designed to support the growing need for efficient DC to DC
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LPT-3535-xxxLA,
08-Apr-05
mpp schematic
LPT-3535-100LA
LPT-3535-101LA
LPT-3535-150LA
LPT-3535-1R0LA
LPT-3535-1R5LA
LPT-3535-250LA
LPT-3535-2R5LA
LPT-3535-330LA
LPT-3535-3R3LA
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Untitled
Abstract: No abstract text available
Text: PTC Thermistor 2381 662 95xxx PTCHP12SxxxHYE FEATURES • Silver metallization suitable for clamping • Self-regulating temperature with no oscillation • Fast heat-up due to high dissipation at low temperatures • Dissipates up to 20 W depending on mounting conditions
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95xxx
PTCHP12SxxxHYE
2002/95/EC
2002/96/EC
03-May-07
VMN-PT0075-0710
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SMD 0505 RESISTOR 10K OHMS
Abstract: code 619 sot-23 ORNTA 1002 20 PIN LEADLESS CHIP CARRIER THICK FILM SMD MARKING CODE 071 A01 tdp1603 Zener diode smd 071 A01 M55342/09 87012 87015 resistor
Text: VISHAY INTE R TE C HN O L O G Y , IN C . INTERACTIVE data book thin film products vishay thin film vse-db0024-0706 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0024-0706
SMD 0505 RESISTOR 10K OHMS
code 619 sot-23
ORNTA 1002
20 PIN LEADLESS CHIP CARRIER THICK FILM
SMD MARKING CODE 071 A01
tdp1603
Zener diode smd 071 A01
M55342/09
87012
87015 resistor
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AN826
Abstract: SC70-6L
Text: AN826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK SC70-6L Dual 2.500 0.098 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 2.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063)
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AN826
SC70-6L
03-May-07
AN826
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CHIP 8-PIN 2100 JRC
Abstract: ST7LITEU05 U435 MOROCCO AN2326 HE10 ST7LITEU09 BCP91 st7fliteu09 frc20
Text: ST7LITEU05 ST7LITEU09 8-bit MCU with single voltage Flash memory, ADC, timers Features • Memories – 2K Bytes single voltage Flash program memory with readout protection, in-circuit and in-application programming ICP and IAP . 10K write/erase cycles guaranteed,
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ST7LITEU05
ST7LITEU09
CHIP 8-PIN 2100 JRC
ST7LITEU05
U435 MOROCCO
AN2326
HE10
ST7LITEU09
BCP91
st7fliteu09
frc20
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