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    303 2170 001 Search Results

    303 2170 001 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LTC2170IUKG-14#TRPBF Analog Devices 14-B, 25Msps L Pwr 4x ADCs Visit Analog Devices Buy
    LTC2170IUKG-12#TRPBF Analog Devices 12-B, 25Msps L Pwr 4x ADCs Visit Analog Devices Buy
    LTC2170IUKG-12#PBF Analog Devices 12-B, 25Msps L Pwr 4x ADCs Visit Analog Devices Buy
    LTC2170CUKG-12#TRPBF Analog Devices 12-B, 25Msps L Pwr 4x ADCs Visit Analog Devices Buy
    LTC2170CUKG-14#PBF Analog Devices 14-B, 25Msps L Pwr 4x ADCs Visit Analog Devices Buy

    303 2170 001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    atc100B100GT500XT

    Abstract: MRF21010 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistor MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010LSR1 MRF21010 atc100B100GT500XT ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi

    C-XM-99-001-01

    Abstract: pep cxm MRF21010
    Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010 MRF21010LR1 MRF21010LSR1 C-XM-99-001-01 pep cxm

    MRF21010

    Abstract: MRF21010LR1 MRF21010LSR1 Vishay Capacitor marking
    Text: Freescale Semiconductor Technical Data Document Number: MRF21010 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21010 MRF21010LR1 MRF21010LSR1 MRF21010LR1 MRF21010 MRF21010LSR1 Vishay Capacitor marking

    MRF21010

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010 MRF21010LR1 MRF21010LSR1

    capacitor 0805 avx

    Abstract: MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to


    Original     		PDF MRF21010/D MRF21010 capacitor 0805 avx MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23

    J4-89

    Abstract: J534
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 0, 9/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 J4-89 J534

    atc 17-33

    Abstract: 600B A113 A114 A115 AN1955 C101 JESD22 MRF6S20010GNR1 MRF6S20010N
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 1, 5/2006 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


    Original     		PDF MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 MRF6S20010NR1 atc 17-33 600B A113 A114 A115 AN1955 C101 JESD22 MRF6S20010GNR1 MRF6S20010N

    MRF21010

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF21010/D MRF21010 MRF21010S MRF21010S

    j3068

    Abstract: 1990 1142
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 0, 12/2005 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


    Original     		PDF MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 MRF6S20010N j3068 1990 1142

    MRF21010

    Abstract: 100B102JW 293D106X9035D2T MRF21010S NI-360
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010/D MRF21010 MRF21010S MRF21010 100B102JW 293D106X9035D2T MRF21010S NI-360

    j438

    Abstract: MRF21010
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF21010/D MRF21010 MRF21010S j438

    Untitled

    Abstract: No abstract text available
    Text: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power ampliier applications in the 2110 to 2170 MHz


    Original     		PDF PTFB210801FA PTFB210801FA H-37265-2

    MRF21010

    Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010/D MRF21010R1 MRF21010SR1 MRF21010R1 MRF21010 MRF21010SR1 sot-23 macom 100B5R6B

    PTFB210801

    Abstract: NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT
    Text: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz


    Original     		PDF PTFB210801FA PTFB210801FA H-37265-2 PTFB210801 NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT

    MW4IC2230NB

    Abstract: j631 marking j130 J242
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts


    Original     		PDF MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 MW4IC2230NB j631 marking j130 J242

    hatching machine

    Abstract: A113 AN1955 AN1987 MW4IC2230 MW4IC2230GMBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230NBR1
    Text: Freescale Semiconductor Technical Data MW4IC2230 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts


    Original     		PDF MW4IC2230 MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 hatching machine A113 AN1955 AN1987 MW4IC2230GMBR1

    TO272* APPLICATION

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC2230 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W−CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts


    Original     		PDF MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 TO272* APPLICATION

    1329a

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts


    Original     		PDF MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 1329a

    EB202

    Abstract: AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER
    Text: SG46/D REV 21 Wireless RF, IF and Transmitter Selector Guide Wireless RF, IF and Transmitter Selector Guide While Motorola is a worldwide leader in semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF


    Original     		PDF SG46/D EB202 AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet InterferenceHunter Handheld Direction Finding System MA2700A Includes GPS and Electronic Compass Introduction Simplify your interference hunting tasks with the Handheld InterferenceHunter™ from Anritsu Company. This broadband, easy-to-use handheld direction finding antenna system includes everything you need to find the


    Original     		PDF MA2700A MA2700on MA2700A

    HEP89

    Abstract: HP89 MC10EP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2
    Text: MC10EP89 3.3V / 5VĄECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The


    Original     		PDF MC10EP89 MC10EP89 r14525 MC10EP89/D HEP89 HP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2

    MRF1550

    Abstract: MMH3101 ar164 uhf amplifier design MRF454 motorola MOTOROLA SELECTION mrf150 MRF247 bts 425 l1 mrf5015 MRF9135
    Text: Freescale Semiconductor Selector Guide. Wireless RF Product. SG46/D Rev. 27 10/2004 Wireless RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor serves both the wireless infrastructure and subscriber markets. Freescale RF Solutions is the leader in RF technology—today AND tomorrow—and is the answer for developers


    Original     		PDF SG46/D xx/2004 MRF1550 MMH3101 ar164 uhf amplifier design MRF454 motorola MOTOROLA SELECTION mrf150 MRF247 bts 425 l1 mrf5015 MRF9135

    hep89

    Abstract: transistor tt 2170 HP89 MC10EP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2
    Text: MC10EP89 3.3V / 5VĄECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The


    Original     		PDF MC10EP89 MC10EP89 r14525 MC10EP89/D hep89 transistor tt 2170 HP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index