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    800A150GT Search Results

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    800A150GT Price and Stock

    Kyocera AVX Components 800A150GT250XT

    MLC 800 - Tape and Reel (Alt: 800A150GT250XT)
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    Avnet Americas 800A150GT250XT Reel 12 Weeks 500
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    Mouser Electronics 800A150GT250XT
    • 1 $3.17
    • 10 $2.17
    • 100 $1.65
    • 1000 $1.34
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    Richardson RFPD 800A150GT250XT 1
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    800A150GT250XT 500
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    Kyocera AVX Components 800A150GT250XTV

    MLC 800 - Tape and Reel (Alt: 800A150GT250XTV)
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    Avnet Americas 800A150GT250XTV Reel 12 Weeks 500
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    Richardson RFPD 800A150GT250XTV 1
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    Kyocera AVX Components 800A150GT150XTV4K

    MLC 800 - Tape and Reel (Alt: 800A150GT150XTV4K)
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    Avnet Americas 800A150GT150XTV4K Reel 12 Weeks 4,000
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    Mouser Electronics 800A150GT150XTV4K
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    Kyocera AVX Components 800A150GTN250XS25

    MLC 800 - Tape and Reel (Alt: 800A150GTN250XS25)
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    Avnet Americas 800A150GTN250XS25 Reel 12 Weeks 25
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    Kyocera AVX Components 800A150GTN250XT

    MLC 800 - Tape and Reel (Alt: 800A150GTN250XT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 800A150GTN250XT Reel 12 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.6806
    • 10000 $3.542
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    Mouser Electronics 800A150GTN250XT
    • 1 $8.24
    • 10 $5.71
    • 100 $4.57
    • 1000 $4.42
    • 10000 $4.42
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    800A150GT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PTFB210801

    Abstract: NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT
    Text: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz


    Original
    PTFB210801FA PTFB210801FA H-37265-2 PTFB210801 NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power ampliier applications in the 2110 to 2170 MHz


    Original
    PTFB210801FA PTFB210801FA H-37265-2 PDF