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    800A150GT Price and Stock

    Kyocera AVX Components 800A150GT150XTV4K

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 150V 15pF Tol 2% Las Mkg Vertical
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    Mouser Electronics 800A150GT150XTV4K
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    Kyocera AVX Components 800A150GT150XTV

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 150V 15pF Tol 2% Las Mkg Vertical
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    Mouser Electronics 800A150GT150XTV
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    Kyocera AVX Components 800A150GT250X

    HI-Q MULTILAYER CERAMIC CAPACITORS
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    Richardson RFPD 800A150GT250X 81 1
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    Kyocera AVX Components 800A150GT250XT

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    Richardson RFPD 800A150GT250XT 1
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    800A150GT250XT 1
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    Kyocera AVX Components 800A150GT250XTV

    HI-Q MULTILAYER CERAMIC CAPACITORS
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    Richardson RFPD 800A150GT250XTV 1
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    800A150GT Datasheets Context Search

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    PTFB210801

    Abstract: NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT
    Text: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz


    Original     		PDF PTFB210801FA PTFB210801FA H-37265-2 PTFB210801 NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT

    Untitled

    Abstract: No abstract text available
    Text: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power ampliier applications in the 2110 to 2170 MHz


    Original     		PDF PTFB210801FA PTFB210801FA H-37265-2