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    MACOM PTFB210801FA-V1-R0

    RF MOSFET LDMOS 28V H-37265-2
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    MACOM PTFB210801FA-V1-R250

    RF MOSFET LDMOS 28V H-37265-2
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    PTFB210801FA Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTFB210801FAV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, FET RF LDMOS 80W H37265-2 Original PDF
    PTFB210801FA-V1-R0 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37265-2 Original PDF
    PTFB210801FAV1R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37265-2 Original PDF
    PTFB210801FA-V1-R250 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF LDMOS 80W H37265-2 Original PDF
    PTFB210801FAV1R250 Infineon Technologies RF FETs, Discrete Semiconductor Products, FET RF LDMOS 80W H37265-2 Original PDF
    PTFB210801FAV1R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF LDMOS 80W H37265-2 Original PDF

    PTFB210801FA Datasheets Context Search

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    PTFB210801

    Abstract: NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT
    Text: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz


    Original     		PDF PTFB210801FA PTFB210801FA H-37265-2 PTFB210801 NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT

    Untitled

    Abstract: No abstract text available
    Text: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power ampliier applications in the 2110 to 2170 MHz


    Original     		PDF PTFB210801FA PTFB210801FA H-37265-2

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA