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Vishay Sprague 293D106X9035D2TE3 CAP TANT 10UF 10% 35V 2917
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	293D106X9035D2TE3	Digi-Reel	125,161		1	1 $1.13 10 $0.698 100 $0.4728 1000 $0.4728 10000 $0.4728	Buy Now
	293D106X9035D2TE3	Cut Tape	125,161		1	1 $1.13 10 $0.698 100 $0.4728 1000 $0.4728 10000 $0.4728	Buy Now
	293D106X9035D2TE3	Reel	125,000		500	1 - 10 - 100 - 1000 $0.35378 10000 $0.30483	Buy Now
RS	293D106X9035D2TE3	Bulk			500	1 - 10 - 100 - 1000 $0.8 10000 $0.8	Get Quote
Bristol Electronics	293D106X9035D2TE3		500		8	1 - 10 $0.675 100 $0.4388 1000 $0.216 10000 $0.216	Buy Now
	293D106X9035D2TE3		362			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	293D106X9035D2TE3		160,500		1	1 - 10 - 100 - 1000 $0.2929 10000 $0.2929	Buy Now
Vishay Intertechnologies 293D106X9035D2TE3 293D106X9035D2Te3 - Tape and Reel (Alt: 293D106X9035D2TE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	293D106X9035D2TE3	Reel	391,500	12 Weeks	500	1 - 10 - 100 - 1000 $0.17863 10000 $0.17863	Buy Now
	293D106X9035D2TE3	Ammo Pack		13 Weeks, 3 Days	1	1 $0.85 10 $0.516 100 $0.43 1000 $0.43 10000 $0.43	Buy Now
Mouser Electronics	293D106X9035D2TE3		71,475			1 $0.83 10 $0.587 100 $0.403 1000 $0.283 10000 $0.235	Buy Now
Newark	293D106X9035D2TE3	Reel	1,500		500	1 - 10 - 100 - 1000 $0.439 10000 $0.439	Buy Now
	293D106X9035D2TE3	Cut Tape	289		1	1 $0.85 10 $0.516 100 $0.516 1000 $0.516 10000 $0.516	Buy Now
Bristol Electronics	293D106X9035D2TE3		16,354			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	293D106X9035D2TE3		3,964			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	293D106X9035D2TE3	Reel	226,000		500	1 - 10 - 100 - 1000 $0.19 10000 $0.19	Buy Now
	293D106X9035D2TE3	Cut Tape	1,810		20	1 - 10 - 100 $0.381 1000 $0.381 10000 $0.381	Buy Now

TME	293D106X9035D2TE3		2,429		1	1 $0.687 10 $0.535 100 $0.293 1000 $0.233 10000 $0.229	Buy Now
ComSIT USA	293D106X9035D2TE3		6,601			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	293D106X9035D2TE3		2,990			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	293D106X9035D2TE3	Reel	182,000	15 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Asia	293D106X9035D2TE3			14 Weeks	500	1 - 10 - 100 - 1000 $0.36542 10000 $0.34618	Buy Now
Chip-Germany GmbH	293D106X9035D2TE3		90			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies 293D106X9035D2WE3 Tantalum Capacitors - Solid SMD 10uF 35volt 10% D Case Molded
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	293D106X9035D2WE3		27,564			1 $0.83 10 $0.587 100 $0.403 1000 $0.283 10000 $0.235	Buy Now
TTI	293D106X9035D2WE3	Reel	27,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.196	Buy Now
Vishay Intertechnologies 293D106X9035D8T Tantalum Capacitors - Solid SMD 10uF 35volts 10% D case Molded
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	293D106X9035D8T		710			1 $1.2 10 $0.674 100 $0.554 1000 $0.408 10000 $0.404	Buy Now
TTI	293D106X9035D8T	Reel	27,000		500	1 - 10 - 100 - 1000 $0.39 10000 $0.39	Buy Now
Vishay Intertechnologies 293D106X9035D2TE3. Tantalum Capacitor, 10Uf 35V, 0.8 Ohm, 0.1, 7343-31, Full Reel; Capacitance:10Μf; Voltage(Dc):35V; Capacitor Case/Package:2917 [7343 Metric]; Capacitance Tolerance:± 10%; Esr:0.8Ohm; Manufacturer Size Code:D; Product Length:7.3Mm Rohs Compliant: Yes \|Vishay 293D106X9035D2TE3.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	293D106X9035D2TE3.	Reel			500	1 - 10 - 100 - 1000 $0.439 10000 $0.439	Buy Now

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293D106X9035D2T Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
293D106X9035D2T	Vishay	CAP CHP TANT 10UF 35V 10%	Original	PDF
293D106X9035D2T	Vishay	10uF 10% 35V D	Original	PDF
293D106X9035D2TE3	Vishay	CAP 10U00 TNT SMT 35V0 K 2917C T&R	Original	PDF
293D106X9035D2TE3	Vishay Sprague	Tantalum Capacitors, Capacitors, CAP TANT 10UF 35V 10% 2917	Original	PDF

293D106X9035D2T Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	MRF9080 MRF9080LR3 MRF9080LSR3	PDF
C-XM-99-001-01 Abstract: pep cxm MRF21010 Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010 MRF21010LR1 MRF21010LSR1 C-XM-99-001-01 pep cxm	PDF
marking WB1 sot-23 Abstract: marking WB2 sot-23 transistor WB1 Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source	Original	MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1	PDF
0805 capacitor 10 pf Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.	Original	MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf	PDF
MRF9080LSR3 Abstract: 293D106X9035D2T MRF9080LR3 100B0R8BW Micron Semiconductor C1522 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9080LR3 MRF9080LSR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs	Original	MRF9080/D MRF9080LR3 MRF9080LSR3 MRF9080LR3 MRF9080LSR3 293D106X9035D2T 100B0R8BW Micron Semiconductor C1522	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
panasonic inverter dv 707 manual Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594	Original		PDF
Transistor J438 Abstract: MRF21010 100B102JW Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010 MRF21010S Transistor J438 100B102JW	PDF
MRF21010 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010 MRF21010LR1 MRF21010LSR1	PDF
MRF21010R1 Abstract: 567 tone MRF21010 MRF21010LSR1 100B102JW Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	MRF21010/D MRF21010R1 MRF21010LSR1 MRF21010R1 567 tone MRF21010 MRF21010LSR1 100B102JW	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF
MRF21010 Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010/D MRF21010R1 MRF21010SR1 MRF21010R1 MRF21010 MRF21010SR1 sot-23 macom 100B5R6B	PDF
10ACPR Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010LR1 MRF21010LSR1 10ACPR	PDF
capacitor 2200 micro M Abstract: chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LR1 MRF21010LSR1 macom marking Text: Document Number: MRF21010 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFETs 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs	Original	MRF21010 MRF21010LR1 MRF21010LSR1 MRF21010LR1 capacitor 2200 micro M chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LSR1 macom marking	PDF

capacitor 2200 micro M Abstract: MRF21010LR1 MRF21010LSR1 08053G105ZATEA MRF21010 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Freescale Semiconductor, Inc.	Original	MRF21010/D MRF21010LR1 MRF21010LSR1 MRF21010LR1 capacitor 2200 micro M MRF21010LSR1 08053G105ZATEA MRF21010	PDF
CAPACITOR TANTALUM 22uf 16v Abstract: TANTALUM capacitor, .10uF 35V CAPACITOR TANTALUM 4.7UF 35V 470uf 16V tantalum 10uF CAPACITOR 35V tantalum 10uF 16V tantalum capacitor capacitor 10uf 16v 10uf 16V capacitor 156 35v 16v 100uf Text: TANTALUM CAPACITOR ITEM PART# 1 NRA104K20R8 2 NRA154K35R8 3 NRA224K35R8 4 293D224X9035A2T 5 NRA684K20R8 6 NRA105K10R8 7 NRA105K16R8 8 293D105X9016A2T 9 ECST1CY105KR 10 TAJA155K016R 11 293D155X9020A2T 12 NRA225K10R8 13 293D225X9010A2T 14 TAJA225K010R 15 NRA225K20R8	Original	NRA104K20R8 NRA154K35R8 NRA224K35R8 293D224X9035A2T NRA684K20R8 NRA105K10R8 NRA105K16R8 293D105X9016A2T ECST1CY105KR TAJA155K016R CAPACITOR TANTALUM 22uf 16v TANTALUM capacitor, .10uF 35V CAPACITOR TANTALUM 4.7UF 35V 470uf 16V tantalum 10uF CAPACITOR 35V tantalum 10uF 16V tantalum capacitor capacitor 10uf 16v 10uf 16V capacitor 156 35v 16v 100uf	PDF
j438 Abstract: MRF21010 Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.	Original	MRF21010/D MRF21010 MRF21010S j438	PDF
Untitled Abstract: No abstract text available Text: <£e.mi-Conclu<2koi ^Product*, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 378-8960 The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N- Channel Enhancement-Mode Lateral MOSFETs	Original	MRF21010LR1 MRF21010LSR1 360C-05 NI-360S	PDF
marking WB1 sot-23 Abstract: marking WB2 sot-23 293D106X9035D2T MRF9080 MRF9080LR3 MRF9080LSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF9080 Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9080LR3 MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.	Original	MRF9080 MRF9080LR3 MRF9080LSR3 MRF9080LR3 marking WB1 sot-23 marking WB2 sot-23 293D106X9035D2T MRF9080 MRF9080LSR3	PDF
293D335X9016B2TE3 Abstract: 293D107X9010C2TE3 293D225X9035C2TE3 293D336X9010B2TE3 593D475X9050D2T 293d227x9010d2te3 293D106X0025C2TE3 593D226x9025D2TE3 593d227x9010d2te3 293D227X9010E2TE3 Text: 1836-2012.qxp:QuarkCatalogTempNew 9/11/12 1:10 PM Page 1836 TEST & MEASUREMENT 21 Tantalum Capacitors 293D Series Solid Tantalum Chip Capacitors, TANTAMOUNT RoHS H TW W P L INTERCONNECT TH Min. Features ᭤ Molded Case Available in Five Case Codes ᭤ Compatible with “High Volume” Automatic Pick and Place Equipment	Original	293D105X9016A2TE3 293D105X0016A2TE3 93D106X9025C2TE3 593D226X9025D2TE3 593D336X9025E2TE3 593D106X9035D2TE3 593D156X9035D2TE3 593D226X9035E2TE3 593D226X0035E2TE3 593D475X9050D2TE3 293D335X9016B2TE3 293D107X9010C2TE3 293D225X9035C2TE3 293D336X9010B2TE3 593D475X9050D2T 293d227x9010d2te3 293D106X0025C2TE3 593d227x9010d2te3 293D227X9010E2TE3	PDF
WB1 SOT23 Abstract: transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 WB1 SOT23 transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW	PDF
u1 voltage regulator Abstract: MRF9080 MRF9080LSR3 MRF9080R3 MRF9080SR3 Text: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	MRF9080/D MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 MRF9080 MRF9080R3 MRF9080SR3MRF9080LSR3 u1 voltage regulator MRF9080LSR3 MRF9080SR3	PDF
marking WB1 sot-23 Abstract: marking WB2 sot-23 WB1 SOT23 R125510 WB1 MARKING SOT-23 sot-23 wb2 Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	MRF9080 MRF9080LR3 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 WB1 SOT23 R125510 WB1 MARKING SOT-23 sot-23 wb2	PDF
marking WB1 sot-23 Abstract: WB1 SOT23 WB1 MARKING SOT-23 marking WB2 sot-23 Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	MRF9080 MRF9080LR3 MRF9080LSR3 marking WB1 sot-23 WB1 SOT23 WB1 MARKING SOT-23 marking WB2 sot-23	PDF

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293D106X9035D2T Datasheets (4)

293D106X9035D2T Datasheets Context Search

Untitled

C-XM-99-001-01

marking WB1 sot-23

0805 capacitor 10 pf

MRF9080LSR3

schematic diagram atx Power supply 500w

panasonic inverter dv 707 manual

Transistor J438

MRF21010

MRF21010R1

2a258 transistor

MRF21010

10ACPR

capacitor 2200 micro M

capacitor 2200 micro M

CAPACITOR TANTALUM 22uf 16v

j438

Untitled

marking WB1 sot-23

293D335X9016B2TE3

WB1 SOT23

u1 voltage regulator

marking WB1 sot-23

marking WB1 sot-23