FMM-1718
Abstract: FMMT720 FMM1717 1DA SOT23 FMMT617 FMMT618 FMMT619 FMMT717 FMMT718 FMMT722
Text: E-1 I H ‘“”’’’”T’’’’” I I THERMAL CHARACTERISTICS AND DERATING INFORMATION .60 -40 -20 ?0 40 60 AMBIENT TEMPERATURE DEG DERATING 00 >00 120 140 160 CELSIUS CURVE 200 : l.1 150 s z < !7J 100 m s 2 z $ !- 50 O.lms 1ms 1Oms PuLSE MAXIMUM
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15mmxl
FMM1717
FMM1720
FMMT723
FMM-1718
FMMT722
625mW
100mA
FMM-1718
FMMT720
FMM1717
1DA SOT23
FMMT617
FMMT618
FMMT619
FMMT717
FMMT718
FMMT722
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ZTX753
Abstract: T092 ZTX752 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES DSARS0022094.
Text: I PNP SILICON PLANAR MEDIUM I POWER TRANSISTORS I ZTX752 ZTX753 II 1 ISSUE 2- JULY 94 FEATURES ‘ 100 volt VCEC * 2 Amp continuous * Low saturation * PtOt=1 ‘Watt current voltage E-Line 4BSOLUTE MAXIMUM 1 RATINGS. SYMBOL PARAMETER — Collector-Base Voltage
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ZTX752
ZTX753
bove250c
71-YIHL
ZTX753
T092
ZTX752
ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES
DSARS0022094.
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long life electrolytic capacitor
Abstract: PEH 160 PEH330MZ4680M KF 07 PEH 300 3300 uf 385 volt 4550R 330SY
Text: PEH 300 electrolytic capacitors PEH 300 • Long Life Grade • Low ESR and ESL 85°C Snap-In Electrolytic Capacitor • PCB Mounting • High ripple current Application Basic design Typical applications for PEH 300 would be electric drives, welding equipment,
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PEH300VY3390M
long life electrolytic capacitor
PEH 160
PEH330MZ4680M
KF 07
PEH 300
3300 uf 385 volt
4550R
330SY
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IRF3710 equivalent
Abstract: No abstract text available
Text: International IO R Rectifi Of_ PRELIMINARY pd-9.i387a IRFI3710 HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V qss = 100V
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IRFI3710
O-220
IRF3710 equivalent
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BKC Semiconductors
Abstract: DSAIH0002561
Text: DO-35 Glass Schottky Diode BAT43 Applications Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CD ROMs and hard disk drives.
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DO-35
BAT43
DO-213AA)
300pSecs
OT-23
BAR43)
DO-213AA
BKC Semiconductors
DSAIH0002561
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Untitled
Abstract: No abstract text available
Text: bDE D <^70570 0D07T05 • Dlfi I IZETB ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical DMOS FET ZVP1320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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0D07T05
ZVP1320
F-204
F-205
F-207
F-208
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ksp92
Abstract: KSP-92
Text: KSP92/93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA= 2 5 t Characteristic Sym bol : KSP82 : KSP93 Collector-Em itter Voltage : KSP92 : KSP93 Veso Emitter-Base Voltage Collector Current Collector Dissipation (TA* 25X:)
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KSP92/93
KSP82
KSP93
KSP92
KSP93
KSP92
XSP93
KSP-92
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GR 733
Abstract: IR 733
Text: N-CHANNEL POWER MOSFETS IRFS730/731/732/733 FEATURES TO-220F • Low er Rds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFS730/731/732/733
O-220F
IRFS730
IRFS731
IRFS732
IRFS733
GR 733
IR 733
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1RFD123
Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
Text: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*
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IRFD120/121/122/123
12OR/121R/122R/123R
IRFD120,
IRFD121,
IRFD122,
IRFD123
IRFD120R,
IRFD121R,
IRFD122R,
IRFD123R
1RFD123
IRFD
123R
fd120
IRFD 120
IRFD 123
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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N-Channel Power MOSFETs
Abstract: No abstract text available
Text: RFP4N05 RFP4N06 23 HARRIS N-Channel Enhancement-Mode Power Fleld-Effect Transistors August 1991 Features Package T O -2 2 0 A B • 50A, 50V and 60V TOP VIEW • rDS on = ° - 8 fl • SOA is Power-Dissipation Limited D R A IN (FLANGE) • Nanosecond Switching Speeds
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RFP4N05
RFP4N06
RFP4N06
92CS-37I04
92CS-37I05
N-Channel Power MOSFETs
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st400l21
Abstract: No abstract text available
Text: ST400L21 SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA HIGH POWER SWITCHING. INDUSTRIAL APPLICATION Unit in mm DC-AC POWER INVERTER. MOTOR CONTROL APPLICATION. 8 - 04.0 ± 0 8 . High Voltage : VCEO SUS =800V . Triple Diffused Design MAXIMUM RATINGS (Ta=25°C)
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ST400L21
st400l21
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IRF7504
Abstract: No abstract text available
Text: PD - 9.1267G International IO R Rectifier IRF7504 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching
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1267G
IRF7504
EIA-541.
IRF7504
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1RLML2402
Abstract: RLML2402 MARKING CODE PARI SOT23 MARKING tAN SOT-23 diode IRLML2402 rasistor 1RLML mosfet marking code AL sot-23 marking bad sot-23 076A
Text: 567- öt-b P D - 9.1257 International H I Rectifier IRLML2402 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel Fast Switching Voss = 20V R DS(on) =
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1RLML2402
OT-23
OT-23
Liguria49
3-30-i
1RLML2402
RLML2402
MARKING CODE PARI SOT23
MARKING tAN SOT-23 diode
IRLML2402
rasistor
1RLML
mosfet marking code AL sot-23
marking bad sot-23
076A
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20n50
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS SSH20N45/20N50 FEATURES • • • • • • • TO-3P L o w e r R d s o n Im p ro v e d in d u c tiv e ru g g e d n e s s F a s t s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e
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SSH20N45/20N50
SSH20N45
SSH20N45
SSH20N50
SSM20N45/20N50
20n50
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D3341C
Abstract: 34B SOT FDC6322L d0334 Supersot 6
Text: June 1997 FAIRCHILD ADVANCE INFORMATION SEMICONDUCTOR m , FDC6322L Integrated Load Switch General Description Features T h e s e In teg rated Load Switctes a re produced using Fairchild's proprietary, high cell density, D M O S technology. This v e ry high density process is especially tailored to
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FDC6322L
FDC6322L
D0334EE
D3341C
34B SOT
d0334
Supersot 6
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D289
Abstract: No abstract text available
Text: PD-2.269 International [^Rectifier 62c n q o 3 o SCHOTTKY RECTIFIER 60 Amp Description/Features Major Ratings and Characteristics Characteristics 62CNQ030 Units ' f AV Rectangular waveform 60 A VRRM 30 V lFSM @tp-5pssine 4600 A VF 0.35 V TJ 30 Apk, T j - 1 25°C
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62CNQ030
D-291
62CNQ030
D-292
D289
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varactor 36z
Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r
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Z1000
MZ4614
MZ4627
1N4099
M4L3052
M4L3056
1N5158
varactor 36z
germanium
halbleiter index transistor
Halbleiter Buch
2n5347
2n3054
working of reactance modulator
JE2955
germanium transistor
2N3902
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RUR3060
Abstract: RUR3040 RUR3050 power supply 12v 1a
Text: RUR 3040 R U R 3050 RUR 3060 u a d d i q H A K K IO SbE 1 • « 0 2 2 7 1 DD423T2 502 * H A S HARRIS SEMCONt SECTOR 30A Ultrafast Diode With Soft Recovery Characteristic May 1991 Features Package T0 -22 0A C TOP VIEW • Ultrafast w ith Soft Recovery Characteristic
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M3D2271
RUR3040,
RUR3050,
RUR3060
RUR3040
RUR3050
power supply 12v 1a
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2N5962
Abstract: 2N5963 2N59 2N5961
Text: 2N5961 2N5962 2N5963 Central semiconductor Corp. ♦I NPN SILICON TRANSISTOR JEDEC TO-92 CASE EBC 1 4 5 Adam s Avenue Hauppauge, New Y ork 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5961 Series types are Epoxy Molded Silicon NPN Transistors manu
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2N5961
2N5962
11OOVA
400Hz
100yA
2N5962
2N5963
2N59
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Untitled
Abstract: No abstract text available
Text: 91D 02694 A3686-02 SOL ITRQN D F V ICES INC "t i SOLITRON DEVICES INC de D I Û3fc.ab02 ¡¿¡olitron Devices, Inc. NO.: S P E C I F I C A T I O N S OOOEb^ 5 SDT89501 T Y P E : PN P S I L I C O N TR A N S, C A S E : T O - 68 MAXIMUM RATINGS Voltage, Collector to Base V C B 0
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A3686-02
SDT89501
300ysec;
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Untitled
Abstract: No abstract text available
Text: 8368602 SOL ITRON DEVICES INC_ 91D 0 2697 D T* ^ 3 3 S0LITR0N DEVICES I N C Ï Ï 1>e | 03bflbQ5 DGQabl? □ | Cjolitron Devices, Inc. S P E C I F I C A T I O N S N0<: SD T89701 T Y P E : PNP SILICON PWR. TRANS, M A X IM U M R A T IN G S CASE: TO“ 228/ AC
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03bflbQ5
T89701
300ysec;
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SDT899
Abstract: No abstract text available
Text: 83 686 02 SOL ITRON DE VI CE S INC 9 1 D 02701 Bolitron Devices, Inc. TI D Ì È )fl3bflbD a NO.: S P E C I F I C A T I O N S Tm 3 □□□E7Q1 T SDT89902 TYPE: PNP SILICON PWR. TRANS. CASE: TO-114 M AXIM UM RATINGS Voltage, Collector to Base VCB0) .
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SDT89902
O-114
300ysec?
SDT899
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SDT899
Abstract: No abstract text available
Text: 8368602 SOLITRON DEVICES INC_ S0LITR0N DEVICES INC S o litro n 9 1D 0 2 700 D T ’ "'3 3 ' 5 2 3 DlF| üBhöhDS 0GDE7DD 7 Devices, Inc. NO.: S P E C I F I C A T I O N S SDT89901 T Y PE : PNP SILICON PWR. TRANS. C A SE : TO-114 M A X IM U M R A T IN G S
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SDT89901
O-114
300ysec;
SDT899
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