Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RFP4N06 Search Results

    SF Impression Pixel

    RFP4N06 Price and Stock

    Rochester Electronics LLC RFP4N06

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFP4N06 Bulk 1,079
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.33
    Buy Now

    Renesas Electronics Corporation RFP4N06

    - Bulk (Alt: RFP4N06)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RFP4N06 Bulk 4 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Harris Semiconductor RFP4N06

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RFP4N06 480
    • 1 $3.36
    • 10 $3.36
    • 100 $3.36
    • 1000 $1.092
    • 10000 $1.092
    Buy Now
    Rochester Electronics RFP4N06 1,079 1
    • 1 $0.3299
    • 10 $0.3299
    • 100 $0.3101
    • 1000 $0.2804
    • 10000 $0.2804
    Buy Now

    Harris Semiconductor RFP4N06L

    POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 60V, 0.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RFP4N06L 33
    • 1 $2.5
    • 10 $2.3
    • 100 $2
    • 1000 $2
    • 10000 $2
    Buy Now

    RFP4N06 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFP4N06 Intersil 4A, 50V and 60V, 0.800 ?, N-Channel Power MOSFETs Original PDF
    RFP4N06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP4N06 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V, Scan PDF
    RFP4N06 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFP4N06 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFP4N06 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFP4N06 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFP4N06L Fairchild Semiconductor 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFP4N06L Intersil 4A, 50V and 60V, 0.800 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFP4N06L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP4N06L General Electric N-channel logic level power field-effect transistor (LL FET). 60V, 4A. Scan PDF
    RFP4N06L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFP4N06L Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFP4N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFP4N05L

    Abstract: RFP4N06L AN7254 AN7260 TA09520 TB334
    Text: RFP4N05L, RFP4N06L Data Sheet January 2002 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching


    Original
    PDF RFP4N05L, RFP4N06L RFP4N05L RFP4N06L AN7254 AN7260 TA09520 TB334

    AN7254

    Abstract: AN7260 RFP4N05L RFP4N06L TA09520 TB334
    Text: RFP4N05L, RFP4N06L Data Sheet Title FP4 5L, P4 6L bt A, V d V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- July 1999 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for


    Original
    PDF RFP4N05L, RFP4N06L RFP4N05L RFP4N06L AN7254 AN7260 TA09520 TB334

    AN7254

    Abstract: AN7260 RFP4N05 RFP4N06 TB334
    Text: RFP4N05, RFP4N06 June 1999 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    Original
    PDF RFP4N05, RFP4N06 TB334 TA09378. AN7254 AN7260 RFP4N05 RFP4N06 TB334

    AN7254

    Abstract: AN7260 RFP4N05L RFP4N06L TA09520 TB334
    Text: RFP4N05L, RFP4N06L Data Sheet July 1999 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching


    Original
    PDF RFP4N05L, RFP4N06L RFP4N05L RFP4N06L AN7254 AN7260 TA09520 TB334

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original
    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original
    PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    IRF510N

    Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220
    Text: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5


    Original
    PDF MS-012AA TS-001AA MO-169AB RF1K49090 RF1K49093 RF1K49092 RF3S49092SM RF3V49092 RF1K49223 RF1K49088 IRF510N MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220

    N-Channel Power MOSFETs

    Abstract: No abstract text available
    Text: RFP4N05 RFP4N06 23 HARRIS N-Channel Enhancement-Mode Power Fleld-Effect Transistors August 1991 Features Package T O -2 2 0 A B • 50A, 50V and 60V TOP VIEW • rDS on = ° - 8 fl • SOA is Power-Dissipation Limited D R A IN (FLANGE) • Nanosecond Switching Speeds


    OCR Scan
    PDF RFP4N05 RFP4N06 RFP4N06 92CS-37I04 92CS-37I05 N-Channel Power MOSFETs

    Untitled

    Abstract: No abstract text available
    Text: in te r« ! RFP4N05L, RFP4N06L D a ta S h e e t J u ly 1999 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching


    OCR Scan
    PDF RFP4N05L, RFP4N06L RFP4N05L RFP4N06L TA09520. 0-800Q AN7254 AN7260

    RFL2N05L

    Abstract: TA9520 RFL2N06L RFP4N05L RFP4N06L rfl2n06 FM09 92CS-33T4
    Text: 3875081 G E' S O L I D STATECI Logic-Level Power MOSFETs DE | 3 Û 7 5 D Û 1 E I di T -3 7 -0 ? _ RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L F ile N u m b e r 1560 Power Logic Level MOSFETs T E R M IN A L D IA G R A M


    OCR Scan
    PDF lfl43b T-37-0" RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L 92CS-33T4) RFL2N05L RFL2N06L S2CS-38I73 TA9520 RFP4N05L RFP4N06L rfl2n06 FM09 92CS-33T4

    Untitled

    Abstract: No abstract text available
    Text: RFP4N05, RFP4N06 Semiconductor October 1998 Data Sheet 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan
    PDF RFP4N05, RFP4N06 800i2 TB334 TA09378. AN7254 AN7260

    2N06

    Abstract: RFL2N05 RFL2N06 RFP4N05 RFP4N06
    Text: Standard Power M O S F E T s - RFL2N05, RFL2N06, RFP4N05, RFP4N06 File N u m be r 1497 N-Channel Enhancement-Mode Power Field-Effect Transistors 2 and 4 Amperes, 50 V - 60 V ro s o n = 0.60 and 0.750 Features: • SOA is power-dissipation limited


    OCR Scan
    PDF RFL2N05, RFL2N06, RFP4N05, RFP4N06 92CS-3374I RFL2N05 RFL2N06 RFP4N05 RFP4N06* 92CS-Ã 2N06 RFP4N06

    Untitled

    Abstract: No abstract text available
    Text: W vys S RFP4N05L, RFP4N06L S e m ico n d ucto r 7 4A, 50V and 60V, 0.8 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 4A, 50V and 60V • Can be Driven Directly from QMOS, NMOS, TTL Circuits The RFP4N05L and RFP4N06L are N-Channel enhance­


    OCR Scan
    PDF RFP4N05L, RFP4N06L RFP4N05L RFP4N06L TA09520. AN7254 AN7260

    2C337

    Abstract: 92C5-37555 RFL2N05 RFL2N06 RFP4N05 RFP4N06
    Text: 01 3fl750fll 0010113 □ 3 8 7 5 0 8 1 G E S O L ID STATE Standard Power MOSFETs - 01E 18113 RFL2N05, RFL2N06, RFP4N05, RFP4N06 File Number 1497 N-Channel Enhancement-Mode Power Field-Effect Transistors 2 and 4 Amperes, 50 V - 60 V rDs on = 0.60 and 0.750


    OCR Scan
    PDF 3fl750fll RFL2N05, RFL2N06, RFP4N05, RFP4N06 9ZCS-33741 RFL2N05 RFL2N06 RFP4N05 RFP4N06* 2C337 92C5-37555

    RFL2N05L

    Abstract: RFL2N06L RFP4N05L RFP4N06L TA9520
    Text: Logic-Level Power MOSFETs RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L File N u m be r 1560 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINALDIAGRAM 2 and 4 A, 50 V — 60 V rDs(on): 0.6 0 and 0.750 Features: • ■


    OCR Scan
    PDF RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L RFL2N05L RFL2N06L RFP4N05L RFP4N06L* RFP4N06L TA9520

    4n05l

    Abstract: FP4N05L
    Text: RFP4N05L RFP4N06L H a r r is August 1991 N-Channel Logic Level Power Field-Effect Transistors L^FET Package Features • 4A, 50V and 60V T O -2 2 0 A B TOP VIEW • 'D S iO N ) = ° - 8 f i DRAIN (FLANGE) • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits


    OCR Scan
    PDF RFP4N05L RFP4N06L RFP4N06L RFP4N05L, AN7254 AN-7260. 4n05l FP4N05L

    Untitled

    Abstract: No abstract text available
    Text: interrii RFP4N05, RFP4N06 J u n e 1999 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs T h e s e are N -C h a n n e l e n h a n ce m e n t m o d e s ilico n g ate F ile N u m b e r 2 8 8 0 .2 Features * 4A, 5 0 V and 60V * rDS ON = 0 .8 0 0 Q pow er field effect tran sisto rs d e s ig n e d for a p p lica tio n s such


    OCR Scan
    PDF RFP4N05, RFP4N06 RFP4N06 AN7254 AN7260

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan
    PDF T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan
    PDF

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan
    PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


    OCR Scan
    PDF 2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan
    PDF

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


    OCR Scan
    PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630