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    Panasonic Electronic Components 2SK23800QL

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    2SK2380 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2380 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK2380 Panasonic N-Channel Junction FET Original PDF
    2SK2380 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK2380 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK2380 Panasonic Silicon MOS FETs Scan PDF
    2SK23800QL Panasonic JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 1MA 125MW SSMINI-3 Original PDF
    2SK2380J Panasonic TRANS JFET N-CH 0.1A 3SSMINI3-F1 Original PDF
    2SK2380Q Panasonic Silicon N-Channel Junction FET Original PDF
    2SK2380R Panasonic Silicon N-Channel Junction FET Original PDF
    2SK2380S Panasonic Silicon N-Channel Junction FET Original PDF

    2SK2380 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Infrared-Sensor

    Abstract: 2SK2380 SC-75 ciss
    Text: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Ratings Unit VGDO −40 V Gate to Source voltage VGSO −40 V Drain current ID ±1


    Original     		PDF 2SK2380 Infrared-Sensor 2SK2380 SC-75 ciss

    2SK2380

    Abstract: No abstract text available
    Text: 2SK2380 Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency For infrared sensor 1.6±0.15 ● Small capacitance of Ciss, Coss , Crss ● Downsizing 0.4 0.5 +0.1 1 3 0.5 gate-source leakage current, IGSS


    Original     		PDF 2SK2380 2SK2380

    2SK2380

    Abstract: SC-89
    Text: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 0.80±0.05 0.28±0.05 (0.44) ● Low gate to source leakage current, IGSS ● Small capacitance of Ciss, Coss, Crss


    Original     		PDF 2SK2380 2SK2380 SC-89

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK2380J Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 2 VGDO Gate-source voltage (Drain open) VGSO Gate current


    Original     		PDF 2SK2380J

    Infrared-Sensor

    Abstract: latest Infrared-Sensor 2SK2380 SC-89
    Text: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 0.80±0.05 0.28±0.05 (0.80) (0.80) Drain current Gate current Allowable power dissipation Channel temperature


    Original     		PDF 2SK2380 Infrared-Sensor latest Infrared-Sensor 2SK2380 SC-89

    2SK2380

    Abstract: SC-75
    Text: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Ratings Unit VGDO −40 V Gate to Source voltage VGSO −40 V Drain current ID ±1


    Original     		PDF 2SK2380 2SK2380 SC-75

    2SK2380J

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK2380J Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 Rating Unit Gate-drain voltage (Source open) VGDO


    Original     		PDF 2SK2380J 2SK2380J

    2SK2380

    Abstract: SC-89
    Text: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor M Di ain sc te on na tin nc ue e/ d unit: mm 0.12+0.05 – 0.02 0.88+0.05 – 0.03 3° (0.44) 1 2 1.60±0.05 (0.80) 3


    Original     		PDF 2SK2380 2SK2380 SC-89

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm • Features ● Low gate to source leakage current, IGSS ● Small capacitance of Ciss, Coss, Crss ● SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.


    Original     		PDF 2SK2380

    2SK2380J

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK2380J Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 Symbol Rating Unit Gate-drain voltage (Source open)


    Original     		PDF 2SK2380J 02lues, 2SK2380J

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SK3585

    Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
    Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)


    Original     		PDF PUB4753 PU7457) PUB4701 PUB4702 450/600o 380/680o SIP10-A1 2SK0301 2SK663) 2SK301) 2SK3585 Infrared-Sensor 2SK3578 2SK3584 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    3SK192

    Abstract: 2SK651
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )


    OCR Scan     		PDF 2SK2380 2SJ0385 2SJ364 2SK662 2SK663 2SK1103 2SJ163 2SK198 2SK374 2SK123 3SK192 2SK651