2SK245
Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H
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2SK201
2SK203
2SK205
2SK208
2SK209
2SK210
2SK211
2SK212
2SK213
2SK214
2SK245
2SK270
2SK243
2sk205
2SK239A
2SK224
2SK214
2SK259H
2Sk226
2SK240
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FP20W50VX2
Abstract: FP20W50 2SK2197
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2197 FP20W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack ITO-3P (Unit : mm) 500V 20A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2197
FP20W50VX2)
FP20W50VX2
FP20W50
2SK2197
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F20W50VX2
Abstract: 2SK2196 F20W50 F20w mosfet 20A 500V
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2196 F20W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P E-pack Case (Unit : mm) 500V 20A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2196
F20W50VX2)
F20W50VX2
2SK2196
F20W50
F20w
mosfet 20A 500V
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2SK2192
Abstract: F12W50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2192 F12W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2192
F12W50VX2)
2SK2192
F12W50VX2
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2SK2194
Abstract: F15W50VX2 400VDS
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2194 F15W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 500V 15A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2194
F15W50VX2)
2SK2194
F15W50VX2
400VDS
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2SK2193
Abstract: FP12W50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2193 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P FP12W50VX2 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.
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2SK2193
FP12W50VX2)
2SK2193
FP12W50VX2
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2SK2198
Abstract: F30Z50VX2 500V30A
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2198 F30Z50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3L E-pack Case (Unit : mm) 500V 30A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2198
F30Z50VX2)
2SK2198
F30Z50VX2
500V30A
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diode 6A 100v
Abstract: 2SK2191 F12S50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2191 F12S50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 Case E-pack (Unit : mm) 500V 12A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2191
F12S50VX2)
STO-220
diode 6A 100v
2SK2191
F12S50VX2
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2SK2194
Abstract: F15W50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2194 F15W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P E-pack Case (Unit : mm) 500V 15A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2194
F15W50VX2)
2SK2194
F15W50VX2
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2193 FP12W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P (Unit : mm) 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2193
FP12W50VX2)
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2SK2191
Abstract: F12S50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2191 F12S50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2191
F12S50VX2)
STO-220
2SK2191
F12S50VX2
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FP10W50VX2
Abstract: 2SK2190
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2190 FP10W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P (Unit : mm) 500V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2190
FP10W50VX2)
Aval01
FP10W50VX2
2SK2190
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2sk2195 mosfet
Abstract: 2SK2195 FP15W50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2195 FP15W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P (Unit : mm) 500V 15A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2195
FP15W50VX2)
2sk2195 mosfet
2SK2195
FP15W50VX2
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2196 F20W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 500V 20A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2196
F20W50VX2)
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Untitled
Abstract: No abstract text available
Text: V X - n ^ U - X 7 t 7 - MOSFET s t& VX-H SERIES POWER MOSFET O U T L IN E DIM ENSIONS 2SK2190 FP10W50VX2 5 0 0 v 1 0 I ¡¡È fë li a RATINGS Absolute Maximum R atings II Item s n- iE ft sfe Symbol s C onditions + Y* KU' f ^ • V — X D rain -S o u rce Voltage
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2SK2190
FP10W50VX2)
0QQ227c
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BFW 10 fet
Abstract: BFW 10 A FET
Text: V X -H » U -X r t ö - MOSFET VX-n SERIES POWER MOSFET W féT Î-âs0 O U T L IN E D IM E N S IO N S 2SK2190 F P 1 0 W 5 0 V X 2 500V 10a • fëfàm R A TIN G S ■ A b s o lu te Maxim um R a tin g s m Item s K # m Symbol fSffäm . Storage Temperature
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2SK2190
FP10W50VX2)
BFW 10 fet
BFW 10 A FET
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Untitled
Abstract: No abstract text available
Text: VX -ïïv'J-X / 19-MOSFET VX-n SERIES POWER MOSFET O U T L IN E D IM E N S IO N S Case I IT 0 -3 P 2SK2197 FP20W50VX2 500V 20a • R A TIN G S ■ A bsolute Maximum Ratings m id u > • f V - ■ v ■c T ch 150 "C V dss 500 V Vg ss ±30 V DC Id 20 A Peak
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19-MOSFET
2SK2197
FP20W50VX2)
FP20W
50VX2)
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N channel Mosfet 15A 500V
Abstract: F30Z50VX2
Text: V X -ïïv U —X A 1?—MOSFET W A 7 > 'fV * > '7 V X -iï SERIES POWER MOSFET O U T L IN E D IM E N S IO N S Case ! MT0-3L 2SK2198 2 0 . 5 >IAX F30Z50VX2 a 3 . 3 = »2 5.2M -« 'il 500v 30a D a te cod e r, "- 3 0 EIAJ No. ^2SK2198 T7 2.5MAX y. 3 . 5MAX
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2SK2198
F30Z50VX2)
N channel Mosfet 15A 500V
F30Z50VX2
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k2196
Abstract: F20W50 mosfet 20A 500V F20W50VX2 F20w "Power Diode" 500V 20A 2SK2196 mosfet 500v 10A
Text: V X - I v U - X / f 7 —MOSFET V X -1 SERIES POWER MOSFET O U T LIN E DIMENSIONS 2SK2196 F20W50VX2 500V 20 a • RATINGS A b s o lu t e M axim um R a tin g s ¿1 Item § Channel T em perature K U O • v -X flt D rain-S ource Voltage Y - b * V - XW T. G ate-S o u rce Voltage
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2SK2196
F20W50VX2)
K2196
k2196
F20W50
mosfet 20A 500V
F20W50VX2
F20w
"Power Diode" 500V 20A
2SK2196
mosfet 500v 10A
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Untitled
Abstract: No abstract text available
Text: V X -D v U -X / 1 9 -M O S F E T V X -n SERIES POWER MOSFET W W B -st& M O U T L IN E D IM E N S IO N S 2SK2193 FP12W 50VX2 500v 12a fefeM • R A T IN G S ■ A b s o lu te M axim um R a tin g s II Item s IS C h a n n e l T e m p e ra tu re KU < > • v - x f lh
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2SK2196
Abstract: No abstract text available
Text: V X -ïïv'J—X W -M O S F E T VX-n SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S C ase : M T 0 -3 P 2SK2196 F20W50VX2 5.0 ^ 03 500V 20a 2.0±03 2.4 ± D-3 0.65 ± ° 2 ■y'' fèfèm ■ [U n it ’ mm] R A TIN G S Absolute Maximum Ratings II
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2SK2196
F20W50VX2)
2SK2196
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Untitled
Abstract: No abstract text available
Text: RATINGS {=1 « EIAJ No. 2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186 2SK2187 2SK2188 2SK2189 2SK2190 2SK2191 2SK2192 2SK2193 2SK2194 2SK2195 2SK2196 2SK2197 2SK2198 Absolute Maximum Ratings Tch Vdss Vgss I d Pt DC Tc=25°C
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2SK2177
2SK2178
2SK2179
2SK2180
2SK2181
2SK2182
2SK2183
2SK2184
2SK2185
2SK2186
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500V12A
Abstract: No abstract text available
Text: V X -Iv 'J-X /17-MOSFET VX -n SERIES POWER MOSFET W £ \H £ E ] O U T L IN E D IM E N S IO N S 2SK2193 FP12W50VX2 500v12a • R A TIN G S A b s o lu te M axim um R a tin g s m Item @ -V 7' Channel Temperature K U 4 > ■ v —x W ±Drain-Source Voltage
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/17-MOSFET
FP12W50VX2)
2SK2193
500v12a
500V12A
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Untitled
Abstract: No abstract text available
Text: C H A R A C TE R IS TIC S • N -f- ji > / n> X ^ > hfti| 0 9 N-channel, enhancement structure. • A C i s s ¡Jf/h il» . 9 Low input capacitance. Particularly low in the zero bias. • + 9 Low on-state resistance. Example ' It is 0.7f2(m ax.) at 2SK2192,
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2SK2192,
2SK2671.
2SK2192
2SK2671
AC100V
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